Design and testing of wide bandgap current limiting devices

N. Kinsey, R. Curry, H. Helava, D. Bryan, R. Druce
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引用次数: 1

Abstract

The University of Missouri in collaboration with Helava Systems Inc. have developed a concept and have shown in experiments the feasibility of a solid state switch based on the photoconductive properties of a semiconductor for radar limiters in a linear mode. Three possible device geometries were subsequently designed using CST Microwave Studio€ which would allow for matched microwave off-state transmission but provide substantial limiting of the signal in the on-state (illuminated) condition. Each design was simulated and the results compared allowing for the best possible geometry to be chosen. The chosen design allowed for greater than 99% off-state transmission and an on-state limiting of less than 1% of the incident signal. Initial experimental tests to determine the semiconductor's effectiveness to act as a photoconductive switch were investigated using highly conductive silver paint. These devices were then subjected to testing and the results compared with simulated calculations in CST and MATLAB®. Through these tests, the University of Missouri has demonstrated the ability of aluminum gallium nitride (AlGaN) to act as a photoconductive switch when illuminated with 355-nm light. Experiments show a greater than two orders of magnitude drop in semiconductor channel resistance upon illumination. While further investigation into the ability of the device to obtain sub-ohm resistance levels is needed, initial tests and calculations confirm the ability of AlGaN materials to act as a current limiting device with the geometry designed by the University of Missouri.
宽禁带限流装置的设计与测试
密苏里大学与Helava系统公司合作开发了一种概念,并在实验中证明了基于半导体光导特性的线性模式雷达限制器固态开关的可行性。随后使用CST Microwave Studio€设计了三种可能的器件几何形状,这将允许匹配的微波非状态传输,但在导通状态(照明)条件下提供大量的信号限制。每种设计都进行了模拟,并对结果进行了比较,以便选择最佳的几何形状。所选择的设计允许大于99%的非状态传输和小于1%的入射信号的导通状态限制。为了确定半导体作为光导开关的有效性,初步实验测试使用高导电银漆进行了研究。然后对这些设备进行测试,并将结果与CST和MATLAB®中的模拟计算结果进行比较。通过这些测试,密苏里大学已经证明了氮化铝镓(AlGaN)在355纳米光照射下充当光导开关的能力。实验表明,光照后半导体沟道电阻下降两个数量级以上。虽然需要进一步研究该器件获得亚欧姆电阻水平的能力,但初步测试和计算证实了AlGaN材料具有密苏里大学设计的几何结构作为限流器件的能力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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