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CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389)最新文献

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Integral gauge pressure sensor with frequency output signal 带频率输出信号的整体式压力表压力传感器
CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389) Pub Date : 1999-10-05 DOI: 10.1109/SMICND.1999.810592
V.S. Beshliu, V. Kantser, L. Beldiman, V.V. Beshliu, R.A. Coban
{"title":"Integral gauge pressure sensor with frequency output signal","authors":"V.S. Beshliu, V. Kantser, L. Beldiman, V.V. Beshliu, R.A. Coban","doi":"10.1109/SMICND.1999.810592","DOIUrl":"https://doi.org/10.1109/SMICND.1999.810592","url":null,"abstract":"The process of manufacture of a silicon pressure-voltage sensor based on the bulk micromachining technology and voltage-frequency converter based on the CMOS technology is described. The electrical scheme and thermocompensation circuits of sensitivity and offset or the pressure-frequency sensor are presented. The structure, design, principle of operation and main characteristics of the gauge pressure sensor with the frequency output signal are considered.","PeriodicalId":223226,"journal":{"name":"CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131916772","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Novel concepts for high voltage junction termination techniques using very deep trenches 使用极深沟槽的高压结终端技术的新概念
CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389) Pub Date : 1999-10-05 DOI: 10.1109/SMICND.1999.810432
D. Dragomirescu, G. Charitat, F. Morancho, P. Rossel
{"title":"Novel concepts for high voltage junction termination techniques using very deep trenches","authors":"D. Dragomirescu, G. Charitat, F. Morancho, P. Rossel","doi":"10.1109/SMICND.1999.810432","DOIUrl":"https://doi.org/10.1109/SMICND.1999.810432","url":null,"abstract":"Numerous techniques have been used to improve the voltage handling capability of high voltage power devices with the aim to obtain the breakdown of a plane junction. In this work, we present a new high voltage junction termination technique using very deep trenches available from microsystems technologies. This new concept names Trench Termination Technique: T/sup 3/ increase the device breakdown voltage to almost the ideal value of the plane case and, in the same time, consume a much lower Silicon space than the previous proposed solutions as an example. Two different architectures for 6 kV devices are described, but these techniques are easily scalable to any voltage range (in the field of high voltage devices).","PeriodicalId":223226,"journal":{"name":"CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389)","volume":"57 3","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132899269","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
Photovoltaic properties of the Bi/sub 4/Ti/sub 3/O/sub 12//Si heterostructures Bi/sub 4/Ti/sub 3/O/sub 12/ Si异质结构的光伏特性
CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389) Pub Date : 1999-10-05 DOI: 10.1109/SMICND.1999.810546
L. Pintilie, I. Pintilie, M. Alexe
{"title":"Photovoltaic properties of the Bi/sub 4/Ti/sub 3/O/sub 12//Si heterostructures","authors":"L. Pintilie, I. Pintilie, M. Alexe","doi":"10.1109/SMICND.1999.810546","DOIUrl":"https://doi.org/10.1109/SMICND.1999.810546","url":null,"abstract":"Photovoltaic properties of the Bi/sub 4/Ti/sub 3/O/sub 12//Si heterostructures were investigated in the 250-1100 nm wavelength range. Four bands centered on 400 nm, 500 nm, 865 nm and 1025 nm are observed in the normalized spectral distributions. The relative amplitude of the peaks corresponding to these bands depends on the annealing temperature and ferroelectric polarization.","PeriodicalId":223226,"journal":{"name":"CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389)","volume":"320 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122025035","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Influence of a shallow p+ offset region on a novel edge termination technique using lightly doped p-rings 浅p+偏移区对轻掺杂p环边缘终止新技术的影响
CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389) Pub Date : 1999-10-05 DOI: 10.1109/SMICND.1999.810389
J. Bose, M. M. De Souza, E. Narayanan, O. Spulber, M. Sweet
{"title":"Influence of a shallow p+ offset region on a novel edge termination technique using lightly doped p-rings","authors":"J. Bose, M. M. De Souza, E. Narayanan, O. Spulber, M. Sweet","doi":"10.1109/SMICND.1999.810389","DOIUrl":"https://doi.org/10.1109/SMICND.1999.810389","url":null,"abstract":"In this paper, for the first time, a novel 'volumetric' edge termination structure using minimally sized lightly doped p-rings is presented. The addition of a shallow p/sup +/ region, offset from the centre of each well towards the main junction, reduces the peak electric field at the surface and provides immunity to interface oxide charges. An alternative structure with metal field plate contacted to a p region centred within the p-well enables the peak electric field at each ring to be further reduced. As a result 90% of the plane parallel breakdown voltage can be achieved by increasing the number of rings. The influence of oxide thickness and the interface charge on the breakdown voltage of all three edge terminations has been analysed in detail.","PeriodicalId":223226,"journal":{"name":"CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115169993","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Modeling and design of a micromachined Fabry-Perot interferometer 微机械法布里-珀罗干涉仪的建模与设计
CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389) Pub Date : 1999-10-05 DOI: 10.1109/SMICND.1999.810603
C. Bostan, V. Avraynescu
{"title":"Modeling and design of a micromachined Fabry-Perot interferometer","authors":"C. Bostan, V. Avraynescu","doi":"10.1109/SMICND.1999.810603","DOIUrl":"https://doi.org/10.1109/SMICND.1999.810603","url":null,"abstract":"A physical model and its application to the design of a micromachined low-order tunable Fabry-Perot interferometer are discussed. The optical properties of the thin films as well as their surface defects are taken into account. The dependence of the free spectral range and the transmission bandwidth on the phase change which occurs on reflection are emphasized. A computer program written in MATLAB was applied to a particular structure.","PeriodicalId":223226,"journal":{"name":"CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114855979","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Thermal flow micro sensors 热流微型传感器
CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389) Pub Date : 1999-10-05 DOI: 10.1109/SMICND.1999.810580
Miko Elwenspoek
{"title":"Thermal flow micro sensors","authors":"Miko Elwenspoek","doi":"10.1109/SMICND.1999.810580","DOIUrl":"https://doi.org/10.1109/SMICND.1999.810580","url":null,"abstract":"A review is given on sensors fabricated by silicon micromachining technology using the thermal domain for the measurement of fluid flow. Attention is paid especially to performance and geometry of the sensors. Three basic types of thermal flow sensors are discussed: anemometers, calorimetric flow sensors and time of flight flow sensors. Anemometers may comprise several heaters and temperature sensors and from a geometric point of view are similar sometimes for calorimetric flow sensors. We find that depending on the Reynolds number to or three element anemometers may perform as calorimetric sensors (very small Re) while calorimetric flow sensors operate like anemometers in the high Re regime.","PeriodicalId":223226,"journal":{"name":"CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389)","volume":"150 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123221161","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 98
Optical actuation of micromechanical tunneling structures 微机械隧道结构的光学驱动
CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389) Pub Date : 1999-10-05 DOI: 10.1109/SMICND.1999.810584
M. Dragoman, D. Dragoman
{"title":"Optical actuation of micromechanical tunneling structures","authors":"M. Dragoman, D. Dragoman","doi":"10.1109/SMICND.1999.810584","DOIUrl":"https://doi.org/10.1109/SMICND.1999.810584","url":null,"abstract":"An efficient method to optically actuate a micromechanical cantilever is presented. Measurable responses are obtained for moderate light sources if electron tunneling occurs between the cantilever tip and a metallic contact below it. The small cantilever deflection due to light pressure produces large tunneling current variations. Several applications are presented.","PeriodicalId":223226,"journal":{"name":"CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389)","volume":"143 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123276203","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Investigation on oxygen implanted silicon by optical spectroscopy and RBS 氧注入硅的光谱学和RBS研究
CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389) Pub Date : 1999-10-05 DOI: 10.1109/SMICND.1999.810504
M. Bercu, T. Tate, E. Ivanov
{"title":"Investigation on oxygen implanted silicon by optical spectroscopy and RBS","authors":"M. Bercu, T. Tate, E. Ivanov","doi":"10.1109/SMICND.1999.810504","DOIUrl":"https://doi.org/10.1109/SMICND.1999.810504","url":null,"abstract":"This study is devoted both to the theory and experimental approach on optical reflectance spectra for the characterisation of oxygen implanted sample. The calculation of light reflected intensity from the silicon surface impurified by O+ ionic implantation has been carried out. The theoretical spectra were fitted to the experimental data in the frame of a parameter extraction procedure. The temperature activated redistribution and the formation of the buried oxide layer has been analysed in the frame of this approach. The depth and the width of the SiO/sub 2/ buried layer obtained has been compared with RBS data. A good agreement between two methods was obtained.","PeriodicalId":223226,"journal":{"name":"CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389)","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130740624","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
XRD study of gas sensitive SnO/sub 2/ thin films deposited by spray pyrolysis method 喷雾热解法制备SnO/ sub2气敏薄膜的XRD研究
CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389) Pub Date : 1999-10-05 DOI: 10.1109/SMICND.1999.810527
G. Korotcenkov, J. Schwank, M. DiBattista, V. Brinzari
{"title":"XRD study of gas sensitive SnO/sub 2/ thin films deposited by spray pyrolysis method","authors":"G. Korotcenkov, J. Schwank, M. DiBattista, V. Brinzari","doi":"10.1109/SMICND.1999.810527","DOIUrl":"https://doi.org/10.1109/SMICND.1999.810527","url":null,"abstract":"The results ofresearch of SnO2 thin film structure using XRD difhction is presented in this report. We discuss the influence of conditions of film deposition and modes of heat treatment m the range of temperatures 400-900°C on crystallite size and predominant orientation. It was determined that SnOz 5 h s , deposited by spray pyrolysis method, are textured polyaystalline films with nano-size aystal€ites (Hl-20 run). Predominant orientatkm of crystallites ((1 10) or (200)). forming the gas sensitive surface, depends on film thickness and used modes of deposition. We also have shown that the structure of studied Sn02 films was very stable in oxygen atmosphere.","PeriodicalId":223226,"journal":{"name":"CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133387243","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Radiation induced change of the effective doping concentration in silicon detectors 辐射诱导的硅探测器中有效掺杂浓度的变化
CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389) Pub Date : 1999-10-05 DOI: 10.1109/SMICND.1999.810545
M. Petriş
{"title":"Radiation induced change of the effective doping concentration in silicon detectors","authors":"M. Petriş","doi":"10.1109/SMICND.1999.810545","DOIUrl":"https://doi.org/10.1109/SMICND.1999.810545","url":null,"abstract":"Ion implanted n-type standard, oxygenated and nitrogenated silicon detectors have been irradiated with 24 GeV/c proton beam, up to a fluence of 10/sup 14/ cm/sup -2/. The effective doping concentration versus fluence and the values of the inversion fluence are presented for each type of silicon detector. Results of charge collection measurements made for the damaged detectors using an /sup 241/Am /spl alpha/ source are reported.","PeriodicalId":223226,"journal":{"name":"CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123961812","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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