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CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389)最新文献

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Analyses of a COOL-MOSFET 一个COOL-MOSFET的分析
CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389) Pub Date : 1999-10-05 DOI: 10.1109/SMICND.1999.810446
O. Spuiber, M. M. De Souza, E. Narayanan, S. Krishnan
{"title":"Analyses of a COOL-MOSFET","authors":"O. Spuiber, M. M. De Souza, E. Narayanan, S. Krishnan","doi":"10.1109/SMICND.1999.810446","DOIUrl":"https://doi.org/10.1109/SMICND.1999.810446","url":null,"abstract":"The recent introduction of the COOLMOS device has demonstrated the possibility of a new realm of vertical power devices with significantly reduced on-resistance. In this paper, a detailed analysis of the on-state performance and breakdown voltage of the COOLMOS is presented.","PeriodicalId":223226,"journal":{"name":"CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114310977","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Operational model for a n-silicon/N-diamond composite electron source n-硅/ n-金刚石复合电子源的工作模型
CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389) Pub Date : 1999-10-05 DOI: 10.1109/SMICND.1999.810507
V. Filip, D. Nicolaescu, F. Okuyama, I. Kleps
{"title":"Operational model for a n-silicon/N-diamond composite electron source","authors":"V. Filip, D. Nicolaescu, F. Okuyama, I. Kleps","doi":"10.1109/SMICND.1999.810507","DOIUrl":"https://doi.org/10.1109/SMICND.1999.810507","url":null,"abstract":"A model for electron field injection from the n-silicon conduction band (CB) into the nitrogen (N)-diamond CB is presented. The model takes into account the electric field penetration into the silicon base and proposes a voltage dependence of the field in vacuum leading to a good fit of the experimental J-V results.","PeriodicalId":223226,"journal":{"name":"CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115158896","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Theory of operation and design criteria for a MOS peaking current source MOS峰值电流源的工作原理和设计准则
CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389) Pub Date : 1999-10-05 DOI: 10.1109/SMICND.1999.810436
A. Wild, V. Gheorghiu
{"title":"Theory of operation and design criteria for a MOS peaking current source","authors":"A. Wild, V. Gheorghiu","doi":"10.1109/SMICND.1999.810436","DOIUrl":"https://doi.org/10.1109/SMICND.1999.810436","url":null,"abstract":"A constant current source in MOS integrated circuits often uses ill-characterized parasitic elements, such as diodes, as references, and relies on feedback techniques to achieve regulation. This paper describes a current source that uses exclusively MOS transistors and resistors, and can be used in its simplest implementation without feedback. The reference can be incorporated in more complex designs, that can use established techniques to improve its stability, temperature characteristics and sensitivity to tolerance.","PeriodicalId":223226,"journal":{"name":"CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125949702","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Multilayer gratings: characterization and application 多层光栅:特性与应用
CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389) Pub Date : 1999-10-05 DOI: 10.1109/SMICND.1999.810530
N. Dmitruk, O.I. Mayeva, O. Yastrubchak, S. Mamykin, M. Klopfleish
{"title":"Multilayer gratings: characterization and application","authors":"N. Dmitruk, O.I. Mayeva, O. Yastrubchak, S. Mamykin, M. Klopfleish","doi":"10.1109/SMICND.1999.810530","DOIUrl":"https://doi.org/10.1109/SMICND.1999.810530","url":null,"abstract":"The characterization methods for a multicoated grating as an optochemical sensor are described. The optochemical sensor uses surface plasmon resonance (SPR) on metal Au thin film vacuum evaporated on a diffraction grating prepared by holographic technique on a GaAs single-crystal. Concentration of the chemical solution is obtained by measuring the SPR condition changes, which are given by the dielectric constant of the solution tested. Characterization of multilayer gratings and demonstration of sensor application are given.","PeriodicalId":223226,"journal":{"name":"CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126223301","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High boron doped etch stop technique used in micromachining of silicon membranes and cantilevers [and optomechanical microsensor application] 高硼掺杂蚀刻停止技术在硅膜和悬臂梁微加工中的应用[及光机械微传感器应用]
CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389) Pub Date : 1999-10-05 DOI: 10.1109/SMICND.1999.810601
R. Muller, E. Manea, I. Pavelescu
{"title":"High boron doped etch stop technique used in micromachining of silicon membranes and cantilevers [and optomechanical microsensor application]","authors":"R. Muller, E. Manea, I. Pavelescu","doi":"10.1109/SMICND.1999.810601","DOIUrl":"https://doi.org/10.1109/SMICND.1999.810601","url":null,"abstract":"This paper describes the manufacture of three dimensional microstructures, using p/sup +/ etch stop techniques. Our experiments focused on bulk and front side micromachining and the integration of these structures with optical waveguides for microsensors with optical read-out applications. By annealing treatment we reduce the tensile stress induced in the cantilever beams.","PeriodicalId":223226,"journal":{"name":"CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389)","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127177043","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A mechanical screening method for glass passivated wafers 一种玻璃钝化晶圆的机械筛选方法
CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389) Pub Date : 1999-10-05 DOI: 10.1109/SMICND.1999.810503
B. Bucheru, F. Ţurţudău, A. Ichim, R. Iosif, V. Marinescu
{"title":"A mechanical screening method for glass passivated wafers","authors":"B. Bucheru, F. Ţurţudău, A. Ichim, R. Iosif, V. Marinescu","doi":"10.1109/SMICND.1999.810503","DOIUrl":"https://doi.org/10.1109/SMICND.1999.810503","url":null,"abstract":"The paper presents a method for the improvement of product reliability based on screening at the wafer fabrication stage, which is time and money saving for manufacturer. It relates to the manufacture of automotive rectifier diodes in DO21 case. The aim was to establish a mechanical screening procedure based on the correlation between the resistance to applied pressure of glass passivated chips and the results of standard reliability RTV test (rapid thermal variations).","PeriodicalId":223226,"journal":{"name":"CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389)","volume":"346 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124272022","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
6H-SiC MOSFET structures for power device fabrication process characterisation 用于功率器件的6H-SiC MOSFET结构制造工艺表征
CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389) Pub Date : 1999-10-05 DOI: 10.1109/SMICND.1999.810457
P. Godignon, S. Berberich, E. Morvan, X. Jordà, D. Flores, J. Montserrat, J. Rebollo, L. Ottaviani
{"title":"6H-SiC MOSFET structures for power device fabrication process characterisation","authors":"P. Godignon, S. Berberich, E. Morvan, X. Jordà, D. Flores, J. Montserrat, J. Rebollo, L. Ottaviani","doi":"10.1109/SMICND.1999.810457","DOIUrl":"https://doi.org/10.1109/SMICND.1999.810457","url":null,"abstract":"N-channel MOSFETs on Silicon Carbide (SiC) have been fabricated in order to characterise the SiC process technology. From the analysis of MOSFET and test structure electrical characteristics, we can extract parameters concerning channel properties, oxide and interface quality as well as ohmic contact resistivity. Temperature behaviour is also analysed since it differs from standard Silicon (Si) device behaviour.","PeriodicalId":223226,"journal":{"name":"CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389)","volume":"69 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123528818","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Decision feedback equalizers for carrierless amplitude/phase modulation receivers 无载波调幅/相位接收机的决策反馈均衡器
CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389) Pub Date : 1999-10-05 DOI: 10.1109/SMICND.1999.810445
R. Zlatanovici, A. Manolescu, L. Kabulepa, M. Glesner
{"title":"Decision feedback equalizers for carrierless amplitude/phase modulation receivers","authors":"R. Zlatanovici, A. Manolescu, L. Kabulepa, M. Glesner","doi":"10.1109/SMICND.1999.810445","DOIUrl":"https://doi.org/10.1109/SMICND.1999.810445","url":null,"abstract":"This paper presents a modulation technique called Carrierless Amplitude/Phase Modulation (CAP). The introduction shows the context for the development of CAP. The second section presents the theoretical framework of CAP and the basic CAP transceiver. The third section shows the way of improving the performance of the basic transceiver by adding a Decision Feedback Equalizer (DFE) to the receiver. The simulation results for three different types of DFE's are presented and discussed in the fourth section.","PeriodicalId":223226,"journal":{"name":"CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131643921","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
A high performance 60-V class lateral power MOSFET on thin film SOI with a graded doping profile in the drift region 一个高性能的60 v级横向功率MOSFET在薄膜SOI上，在漂移区有梯度掺杂
CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389) Pub Date : 1999-10-05 DOI: 10.1109/SMICND.1999.810444
G. Cao, M. M. De Souza, E. Narayanan
{"title":"A high performance 60-V class lateral power MOSFET on thin film SOI with a graded doping profile in the drift region","authors":"G. Cao, M. M. De Souza, E. Narayanan","doi":"10.1109/SMICND.1999.810444","DOIUrl":"https://doi.org/10.1109/SMICND.1999.810444","url":null,"abstract":"The superior performance of a new 60-V class lateral power MOSFET using a graded doping profile in the drift region has been demonstrated for the first time. A simple technique to achieve the graded doping profile for a 3.5 micron drift length extends the breakdown voltage capability of existing power devices in thin SOI (SIMOX) technology. Our detailed analysis reveals that a significant improvement in the on-state and capacitance-voltage performance is possible in comparison to a conventional uniformly doped device.","PeriodicalId":223226,"journal":{"name":"CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131143592","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Nonlinear refractive index in thin Ge/sub x/Sb/sub 40-x/S/sub 60/ films Ge/sub x/Sb/sub 40-x/S/sub 60/薄膜的非线性折射率
CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389) Pub Date : 1999-10-05 DOI: 10.1109/SMICND.1999.810533
V. Pamukchieva, Anna Szekeres, Peter Sharlandjiev
{"title":"Nonlinear refractive index in thin Ge/sub x/Sb/sub 40-x/S/sub 60/ films","authors":"V. Pamukchieva, Anna Szekeres, Peter Sharlandjiev","doi":"10.1109/SMICND.1999.810533","DOIUrl":"https://doi.org/10.1109/SMICND.1999.810533","url":null,"abstract":"A suitable relationship between the linear n/sub L/ and the nonlinear refractive index n/sub 2/ has been used for prediction of the nonlinear behavior of the refractive index in thin Ge/sub x/Sb/sub 40-x/S/sub 60/ films. The parameters (linear refractive index n/sub L/ and the dispersion parameters E/sub 0/ and E/sub d/) necessary for the calculation of the n/sub 2/ are studied by means of spectrophotometry in the light wavelength region of 0.5-2.5 /spl mu/m. It has been established that the nonlinear refractive index increases with increasing linear refractive index. The obtained results for n/sub L/ and n/sub 2/ are considered in terms of the average coordination number Z. The observed peculiarity in the compositional dependences of the linear and nonlinear refractive indices around Z=2.65-2.67 can be connected with the structural changes associated with a topological phase transition of the film structure.","PeriodicalId":223226,"journal":{"name":"CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389)","volume":"62 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125087652","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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