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CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389)最新文献

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TiO/sub 2/-MOCVD thin films on large area macroporous silicon for capacitor applications 电容器用大面积大孔硅上的TiO/sub 2/-MOCVD薄膜
CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389) Pub Date : 1999-10-05 DOI: 10.1109/SMICND.1999.810464
A. Angelescu, I. Kleps, G. Battiston, R. Gerbasi, N. Samfirescu
{"title":"TiO/sub 2/-MOCVD thin films on large area macroporous silicon for capacitor applications","authors":"A. Angelescu, I. Kleps, G. Battiston, R. Gerbasi, N. Samfirescu","doi":"10.1109/SMICND.1999.810464","DOIUrl":"https://doi.org/10.1109/SMICND.1999.810464","url":null,"abstract":"The authors present results of the deposition and characterization of TiO/sub 2/ thin films, prepared by low pressure metal organic chemical vapor deposition (MOCVD) at 400/spl deg/C in an N/sub 2/ or N/sub 2//O/sub 2/ atmosphere using titanium tetraisopropoxide as precursor. The electrical resistivity as a function of thermal treatment is reported and discussed in relation to the microstructure. The crystallographic structure and crystallite dimensions are determined by X-ray diffraction spectrometry. The application of TiO/sub 2/ thin films as the dielectric layer for a capacitor on macroporous silicon is reported.","PeriodicalId":223226,"journal":{"name":"CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389)","volume":"66 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126150328","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
New semiconducting GeSe/sub 3/-FeSe/sub 2/-Ag/sub 2/Se glasses as membranes for Fe(III) ion-selective electrodes 新型半导体GeSe/sub - 3/-FeSe/sub - 2/-Ag/sub - 2/Se玻璃作为Fe(III)离子选择电极的膜
CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389) Pub Date : 1999-10-05 DOI: 10.1109/SMICND.1999.810596
S. Hadjiniltolova, S. Boycheva, V. Vassilev, Z. Ivanova
{"title":"New semiconducting GeSe/sub 3/-FeSe/sub 2/-Ag/sub 2/Se glasses as membranes for Fe(III) ion-selective electrodes","authors":"S. Hadjiniltolova, S. Boycheva, V. Vassilev, Z. Ivanova","doi":"10.1109/SMICND.1999.810596","DOIUrl":"https://doi.org/10.1109/SMICND.1999.810596","url":null,"abstract":"The glass-forming region and some basic physicochemical parameters (temperatures of phase transformations, density and microhardness) of the GeSe/sub 3/-FeSe/sub 2/-Ag/sub 2/Se system have been determined. Membranes of the (GeSe/sub 3/)/sub 85//(FeSe/sub 2/)/sub 10/(Ag/sub 2/Se), (GeSe/sub 3/)/sub 81/(FeSe/sub 2/)/sub 14/(Ag/sub 2/Se)/sub 5/ and (GeSe/sub 3/)/sub 76/(FeSe/sub 2/)/sub 9/(Ag/sub 2/Se)/sub 15/ compositions for Fe(III) ion-selective electrodes have been studied. They have been characterized by the linear range and slope of electrode function, limits of detection and pH-working interval.","PeriodicalId":223226,"journal":{"name":"CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130085856","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Porous silicon surface stabilisation by anodic oxidation for optoelectronic applications 光电应用中多孔硅的阳极氧化表面稳定
CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389) Pub Date : 1999-10-05 DOI: 10.1109/SMICND.1999.810599
I. Kleps, A. Angelescu, I. Miu, M. Ghita, M. Bercu
{"title":"Porous silicon surface stabilisation by anodic oxidation for optoelectronic applications","authors":"I. Kleps, A. Angelescu, I. Miu, M. Ghita, M. Bercu","doi":"10.1109/SMICND.1999.810599","DOIUrl":"https://doi.org/10.1109/SMICND.1999.810599","url":null,"abstract":"Electrochemical anodic stabilisation of porous silicon (PS) samples of different porosities (60-85%) was realised. Anodic oxidation by cyclic voltammetry (CV) was used to emphasize the importance of PS post-preparation storage conditions and the influence of the PS morphology. The partially oxidised PS samples were investigated by IR spectroscopy and by electrical measurements.","PeriodicalId":223226,"journal":{"name":"CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130323364","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Capabilities and limitations of semiconductor surge voltage suppressors 半导体浪涌电压抑制器的性能和局限性
CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389) Pub Date : 1999-10-05 DOI: 10.1109/SMICND.1999.810455
V. Obreja
{"title":"Capabilities and limitations of semiconductor surge voltage suppressors","authors":"V. Obreja","doi":"10.1109/SMICND.1999.810455","DOIUrl":"https://doi.org/10.1109/SMICND.1999.810455","url":null,"abstract":"A short presentation and comparison of characteristics of the commercial available semiconductor transient voltage suppressors is carried out. Illustrative device electrical characteristics are shown, revealing that the silicon junction breakdown suppressors may have a superior overall technical performance, when are compared with silicon thyristor suppressors and metal-oxide varistors.","PeriodicalId":223226,"journal":{"name":"CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389)","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122663023","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
A processor network without interconnection path 没有互连路径的处理器网络
CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389) Pub Date : 1999-10-05 DOI: 10.1109/SMICND.1999.810524
D. Stefan, G. Stefan
{"title":"A processor network without interconnection path","authors":"D. Stefan, G. Stefan","doi":"10.1109/SMICND.1999.810524","DOIUrl":"https://doi.org/10.1109/SMICND.1999.810524","url":null,"abstract":"In the current silicon technologies the wire connections become more and more important. They will waste time, energy and maybe area more than the gates. Beyond the technological solutions for this problem, architectural solutions are welcome. This paper discusses a solution which completely avoids the interconnections in a 4-processor network. More, the four processors share many structural resources, thus minimizing the size of the entire structure. The pipeline penalties are completely avoided in the proposed structure. The machine we describe is an environment for interleaved multi-threaded executions.","PeriodicalId":223226,"journal":{"name":"CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117173661","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Influence of dislocations on excitonic and DA luminescence spectra in GaP epitaxial layers 位错对GaP外延层激子和DA发光光谱的影响
CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389) Pub Date : 1999-10-05 DOI: 10.1109/SMICND.1999.810538
N. Korsunskaya, T. Torchinskaya, V. Kooshnirenko
{"title":"Influence of dislocations on excitonic and DA luminescence spectra in GaP epitaxial layers","authors":"N. Korsunskaya, T. Torchinskaya, V. Kooshnirenko","doi":"10.1109/SMICND.1999.810538","DOIUrl":"https://doi.org/10.1109/SMICND.1999.810538","url":null,"abstract":"In this paper the influence of dislocations on the excitonic and donor-acceptor (DA) luminescence spectra of p/sup ++/ layers of GaP:N p/sup ++/-p/sup +/-n-n/sup +/ light-emitting diodes and structures has been studied experimentally. The appearance of dislocations is shown to be associated with a high level of layer doping. The presence of dislocations brings about a decrease in the luminescence intensity of excitonic bands, a more considerable decline in the intensity of zero-phonon lines than in that of their photonic replicas, and also the appearance of a new defects-NN/sub 2/ complexes and isolated N atoms.","PeriodicalId":223226,"journal":{"name":"CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115516497","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Removal of mixed-noise using order statistic filter and wavelet domain Wiener filter 利用阶统计滤波器和小波域维纳滤波器去除混合噪声
CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389) Pub Date : 1999-10-05 DOI: 10.1109/SMICND.1999.810523
P. Badulescu, R. Zaciu
{"title":"Removal of mixed-noise using order statistic filter and wavelet domain Wiener filter","authors":"P. Badulescu, R. Zaciu","doi":"10.1109/SMICND.1999.810523","DOIUrl":"https://doi.org/10.1109/SMICND.1999.810523","url":null,"abstract":"Enhancement of noisy data is a very challenging issue in many research and application areas. In the last years, nonlinear filters based on wavelet transforms have been shown to be very effective in removing noise without destroying the useful information contained in the image data. The aim of this paper is to evaluate two schemes developed to extend the denoising capability of wavelet domain filters to signals corrupted by impulsive or mixed noise.","PeriodicalId":223226,"journal":{"name":"CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389)","volume":"85 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131681511","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
Electrical stress in N- and P-channel undoped-hydrogenated polysilicon thin film transistors (TFTs) N通道和p通道未掺杂氢化多晶硅薄膜晶体管(TFTs)中的电应力
CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389) Pub Date : 1999-10-05 DOI: 10.1109/SMICND.1999.810452
F. Farmakis, J. Brinis, G. Kamarinos, C. Dimitriadis, V. Gueorguiev, T. Ivanov
{"title":"Electrical stress in N- and P-channel undoped-hydrogenated polysilicon thin film transistors (TFTs)","authors":"F. Farmakis, J. Brinis, G. Kamarinos, C. Dimitriadis, V. Gueorguiev, T. Ivanov","doi":"10.1109/SMICND.1999.810452","DOIUrl":"https://doi.org/10.1109/SMICND.1999.810452","url":null,"abstract":"We applied electrical stress in P- and N-channel polysilicon thin film transistors. N-channel devices exhibit two-step degradation with hot-hole injection into the gate oxide followed by electron injection. Stress in P-channel devices provides interesting results in order to clarify the physical mechanisms occurring during device aging.","PeriodicalId":223226,"journal":{"name":"CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389)","volume":"98 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127241819","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Theoretical investigation of carrier relaxation processes in quantum wells and their effect on radiative and Auger recombination 量子阱中载流子弛豫过程及其对辐射复合和俄歇复合影响的理论研究
CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389) Pub Date : 1999-10-05 DOI: 10.1109/SMICND.1999.810535
G. Zegrya, E. B. Dogonkine, A. Polkovnikov
{"title":"Theoretical investigation of carrier relaxation processes in quantum wells and their effect on radiative and Auger recombination","authors":"G. Zegrya, E. B. Dogonkine, A. Polkovnikov","doi":"10.1109/SMICND.1999.810535","DOIUrl":"https://doi.org/10.1109/SMICND.1999.810535","url":null,"abstract":"In this paper we study the effect of carrier relaxation processes on Auger and radiative recombination in semiconductor quantum wells (QWs). Electron (hole)-electron (hole) and electron-phonon relaxation mechanisms are studied in detail. General expressions for the rates of the two recombination processes with account of the complex valence band structure are derived. It is shown that the relaxation doesn't play an important role for Auger transition in narrow quantum wells, while it is necessary to take it into account in wide quantum wells, where the free path length of the carriers is less than the QW width.","PeriodicalId":223226,"journal":{"name":"CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389)","volume":"438 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124253800","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
/spl Sigma//spl Delta/ data modulators behavioral simulation with MIDAS /spl Sigma//spl Delta/数据调制器行为仿真
CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389) Pub Date : 1999-10-05 DOI: 10.1109/SMICND.1999.810510
M. Padure
{"title":"/spl Sigma//spl Delta/ data modulators behavioral simulation with MIDAS","authors":"M. Padure","doi":"10.1109/SMICND.1999.810510","DOIUrl":"https://doi.org/10.1109/SMICND.1999.810510","url":null,"abstract":"This paper presents the practical aspects of behavioral simulation of sigma-delta converters using MIDAS. Traditional circuit simulators are inadequate for large analog circuits due to the long simulation time. Special purpose simulators are more efficient than general-purpose simulators for specific circuits. To prove the ease of the modulator simulation, a second order sigma-delta modulator is simulated and a third order reconstruction filter analysis is provided.","PeriodicalId":223226,"journal":{"name":"CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124372809","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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