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CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389)最新文献

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A projection for the semiconductor industry in the next quarter century 对半导体产业未来25年的预测
CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389) Pub Date : 1999-10-05 DOI: 10.1109/SMICND.1999.810375
R. Sanford
{"title":"A projection for the semiconductor industry in the next quarter century","authors":"R. Sanford","doi":"10.1109/SMICND.1999.810375","DOIUrl":"https://doi.org/10.1109/SMICND.1999.810375","url":null,"abstract":"The technological and market forces that drive forward the development of the semiconductor industry in the next twenty five years are examined and discussed. In light of the rapid global development of information industries and the Internet, projections are made of shifting position in the industry due to technology, market, or manufacturing innovations. The development of macro and micro-intelligent robotics is envisioned as the next large scale application of semiconductors in the next quarter century.","PeriodicalId":223226,"journal":{"name":"CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116919809","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Preparation and optical characterisation of APCVD BPSG thin films used for micromachining applications 微加工用APCVD BPSG薄膜的制备及光学特性研究
CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389) Pub Date : 1999-10-05 DOI: 10.1109/SMICND.1999.810600
M. Modreanu, P. Cosmin, M. Gartner, C. Danila
{"title":"Preparation and optical characterisation of APCVD BPSG thin films used for micromachining applications","authors":"M. Modreanu, P. Cosmin, M. Gartner, C. Danila","doi":"10.1109/SMICND.1999.810600","DOIUrl":"https://doi.org/10.1109/SMICND.1999.810600","url":null,"abstract":"APCVD films of borophosphosilicate glass with different content of phosphorus and boron was studied as masks for etching in KOH solution. Via the dopant content (B and P) in the as-deposited glasses we can control the etch rate and the stress in the layers. The effect of the proposed densification treatment on the BPSG films is investigated using spectroellipsometry and Wemple Di Domenico approximation. The experiments lead to the conclusion that the best solution is densified thick multiple layers-SiO/sub 2/-BPSG (4 wt.%P, 11 wt.%B)-SiO/sub 2/. The densification treatment used is compatible with the aluminium metalisation process.","PeriodicalId":223226,"journal":{"name":"CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389)","volume":"114 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115089100","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Semiconducting materials in the SnO/sub 2/-CuO system [for gas sensors] SnO/sub - 2/-CuO体系中的半导体材料[用于气体传感器]
CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389) Pub Date : 1999-10-05 DOI: 10.1109/SMICND.1999.810547
O. Scarlat, S. Mihaiu, M. Zaharescu
{"title":"Semiconducting materials in the SnO/sub 2/-CuO system [for gas sensors]","authors":"O. Scarlat, S. Mihaiu, M. Zaharescu","doi":"10.1109/SMICND.1999.810547","DOIUrl":"https://doi.org/10.1109/SMICND.1999.810547","url":null,"abstract":"It is well known that SnO/sub 2/ based ceramics may present very interesting properties with respect to their usefulness for gas detection. To establish the composition limits suitable for sensor applications as well as stable electrodes, a thorough study of the high temperature interactions between SnO/sub 2/ and CuO was done. Non-isothermal and isothermal investigations were carried out in air, for temperatures up to 1250/spl deg/C and 1000/spl deg/C, respectively. According to their ceramic properties, the samples containing less than 20% CuO may be suitable for sensor applications for temperatures <1000/spl deg/C.","PeriodicalId":223226,"journal":{"name":"CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389)","volume":"77 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115720570","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
NEXUS-network of excellence in MST nexus -卓越的MST网络
CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389) Pub Date : 1999-10-05 DOI: 10.1109/SMICND.1999.810579
A. Jeleski, G. Menozzi, H. Petzold
{"title":"NEXUS-network of excellence in MST","authors":"A. Jeleski, G. Menozzi, H. Petzold","doi":"10.1109/SMICND.1999.810579","DOIUrl":"https://doi.org/10.1109/SMICND.1999.810579","url":null,"abstract":"NEXUS is a network established by European Companies and Universities focusing on their efforts in microsystem technology (MST). It is sponsored by the European Commission as a network of excellence. The network of excellence represents a particular organisational form of \"projects\" funded by the CEU; they aim at bringing together the key players in industries and RandD working on common specific technological or scientific topics, and they provide platforms for the mutual exchange of information within those communities. In the case of NEXUS, that common topic is \"multi-functional microsystems\".","PeriodicalId":223226,"journal":{"name":"CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128840458","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Metallic thin films by photodecomposition of new inorganic precursors: azide complexes 新的无机前驱物:叠氮化物配合物的光分解金属薄膜
CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389) Pub Date : 1999-10-05 DOI: 10.1109/SMICND.1999.810500
R. Divan, M. Brezeanu, I. Cemica, R. Olar
{"title":"Metallic thin films by photodecomposition of new inorganic precursors: azide complexes","authors":"R. Divan, M. Brezeanu, I. Cemica, R. Olar","doi":"10.1109/SMICND.1999.810500","DOIUrl":"https://doi.org/10.1109/SMICND.1999.810500","url":null,"abstract":"The deposition of films of metals, metal oxides and metal nitrides on surfaces has attracted a great interest due to their importance in the microelectronic industry. An alternative method, which totally avoids resist technology, is to use the photodecomposition of azide complex layers. We have initiated a study about photodecomposition of new compounds [Cr(N/sub 3/)L(H/sub 2/O)/sub 2/](NO/sub 3/)/sub 2/, [Ni(N/sub 3/)/sub 2/L/sub 2/].10H/sub 2/O, [CuN/sub 3/L](NO/sub 3/) (L=triethanolamine) and [Cr(N/sub 3/)L'(H/sub 2/O)4](NO/sub 3/)/sub 2/, [Cu(N/sub 3/)L'(H/sub 2/O)/sub 2/](NO/sub 3/) (L'=diethanolamine). We have selected the best wavelengths for each complex after a detailed study of UV-spectra. We can obtain thin metallic films of Ni and Cu by photodecomposition of azide complexes.","PeriodicalId":223226,"journal":{"name":"CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124534929","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Experiments on radiation induced effects in the Si/SiO/sub 2/ system Si/SiO/ sub2 /体系辐射诱导效应实验
CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389) Pub Date : 1999-10-05 DOI: 10.1109/SMICND.1999.810506
C. Codreanu, E. Iliescu, A. Badoiu, M. Dragan
{"title":"Experiments on radiation induced effects in the Si/SiO/sub 2/ system","authors":"C. Codreanu, E. Iliescu, A. Badoiu, M. Dragan","doi":"10.1109/SMICND.1999.810506","DOIUrl":"https://doi.org/10.1109/SMICND.1999.810506","url":null,"abstract":"This paper presents the results of an experimental study on MOS capacitor test structures with different oxide thickness and exposed to different irradiation conditions and post-irradiation annealing treatments. Test samples were fabricated on N-type silicon wafers of <111> orientation and 5-10 /spl Omega/ cm resistivity. Irradiation was performed at different temperatures in a 7 MeV linear electron accelerator.","PeriodicalId":223226,"journal":{"name":"CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121115222","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Application of transfer matrix method for detailed description of phonon-polariton states in semiconductor superlattices 转移矩阵法在半导体超晶格声子偏振态详细描述中的应用
CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389) Pub Date : 1999-10-05 DOI: 10.1109/SMICND.1999.810540
O. Gorea, O. Tatarinskaya
{"title":"Application of transfer matrix method for detailed description of phonon-polariton states in semiconductor superlattices","authors":"O. Gorea, O. Tatarinskaya","doi":"10.1109/SMICND.1999.810540","DOIUrl":"https://doi.org/10.1109/SMICND.1999.810540","url":null,"abstract":"On the base of the transfer matrix formalism the dispersion of phonon polaritons in finite and infinite semiconductor SLs was calculated. The account of retardation effects leads to appearance of the additional \"dynamical\" bandgaps in the interface polariton spectra. The complex reflection coefficients also were calculated for the particular case of GaAs/GaAsP SLs. It is shown that the fine structure of spectra can be described by the method.","PeriodicalId":223226,"journal":{"name":"CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116214880","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Partial SOI LDMOSFETs for high-side switching 用于高侧开关的部分SOI ldmosfet
CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389) Pub Date : 1999-10-05 DOI: 10.1109/SMICND.1999.810450
H. Lim, F. Udrea, D. Garner, K. Sheng, W. Milne
{"title":"Partial SOI LDMOSFETs for high-side switching","authors":"H. Lim, F. Udrea, D. Garner, K. Sheng, W. Milne","doi":"10.1109/SMICND.1999.810450","DOIUrl":"https://doi.org/10.1109/SMICND.1999.810450","url":null,"abstract":"This paper describes the switching characteristics of Partial SOI LDMOSFET's in high-side configuration based on the results of numerical simulations. The effects of the substrate bias on the on-state and output capacitances of a device on a Partial SOI substrate are discussed and compared to a conventional SOI substrate. It is shown that having the Partial SOI LDMOSFETs operating in source-high conditions will help to achieve a faster turn-off due to reduced parasitic capacitances. In addition, it is shown that the turn-off speed of Partial SOI LDMOSFETs is at least 3 times higher than of conventional SOI LDMOSFETs.","PeriodicalId":223226,"journal":{"name":"CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116279224","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Hierarchical mixed simulation for intelligent interfaces of microsystems 微系统智能接口的分层混合仿真
CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389) Pub Date : 1999-10-05 DOI: 10.1109/SMICND.1999.810598
T. Niculiu, S. Cotofana, A. Manolescu
{"title":"Hierarchical mixed simulation for intelligent interfaces of microsystems","authors":"T. Niculiu, S. Cotofana, A. Manolescu","doi":"10.1109/SMICND.1999.810598","DOIUrl":"https://doi.org/10.1109/SMICND.1999.810598","url":null,"abstract":"The development of microsystems imposes hierarchical Computer Aided Design (CAD) procedures to manage their complexity. In this paper we attempt to handle microsystem intelligent interfaces by unifying representations for design and verification, as well as for different domains: electrical/non-electrical, analog/digital, hardware/software. Extending the functionality of an intelligent interface from I/O to internal collaboration between complementary domains, we propose an object-oriented framework to support domain specific methods, at different abstraction levels.","PeriodicalId":223226,"journal":{"name":"CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128230505","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Photoelectric properties of ZnTe-CdSe and CdSe-ZnTe thin film heterojunctions ZnTe-CdSe和CdSe-ZnTe薄膜异质结的光电性质
CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389) Pub Date : 1999-10-05 DOI: 10.1109/SMICND.1999.810534
L. Ghimpu
{"title":"Photoelectric properties of ZnTe-CdSe and CdSe-ZnTe thin film heterojunctions","authors":"L. Ghimpu","doi":"10.1109/SMICND.1999.810534","DOIUrl":"https://doi.org/10.1109/SMICND.1999.810534","url":null,"abstract":"For the first time heterojunctions (HJs) of ZnTe-CdSe were grown by deposition of ZnTe layer on glass substrate by the discrete evaporation method and CdSe layer by the quasiclosed volume method. Also for the first time the CdSe-ZnTe HJ was grown by quasiclosed volume method. Results of investigation of the photoelectric properties of these heterojunctions are presented.","PeriodicalId":223226,"journal":{"name":"CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127442837","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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