CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389)最新文献_第7页

Microwave straight edge resonator (SER) on silicon membrane 硅膜上的微波直边谐振器

CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389) Pub Date : 1999-10-05 DOI: 10.1109/SMICND.1999.810517

G. Sajin, E. Matei, M. Dragoman

引用次数: 7

The modelling of the thermal field from a semiconductor structure using the finite elements method 用有限元法模拟半导体结构的热场

CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389) Pub Date : 1999-10-05 DOI: 10.1109/SMICND.1999.810511

P. Schiopu, V. Degeratu, G. Lazar, E. Lakatos, S. Ivan

引用次数: 0

Electron spin resonance investigation on the low temperature Si-O bonding 低温Si-O键的电子自旋共振研究

CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389) Pub Date : 1999-10-05 DOI: 10.1109/SMICND.1999.810536

M. Bercu, C. Ammerlaan, T. Gregorkiewicz

{"title":"Electron spin resonance investigation on the low temperature Si-O bonding","authors":"M. Bercu, C. Ammerlaan, T. Gregorkiewicz","doi":"10.1109/SMICND.1999.810536","DOIUrl":"https://doi.org/10.1109/SMICND.1999.810536","url":null,"abstract":"The Si-O bonding has been investigated in two systems: O/sup +/ implanted silicon and on hydrogenated porous Si surface exposed to air. The oxidation in both cases is accompanied by the formation of P/sub b/ like centers. The paramagnetic defects are generated during the formation of the oxide network. EPR (electron paramagnetic resonance) has been used to determine the defect population evolution in both systems. The samples are annealed in an isochronal multistep procedure for temperatures in the range 50-800/spl deg/C. A common feature has been found for P/sub b/ centers behaviour in bulk and on the surface in respect with both type of samples used. A dramatic effect of surface reconstruction in the early stage of porous silicon oxidation at about 350/spl deg/C has been determined. At this temperature the P/sub b/ concentration reaches its maximum. The O/sup +/ implanted samples show the same feature but with a weak and broader peak of P/sub b/ concentration than in the case of PS (porous silicon). The maximum appears at 300-400/spl deg/C. We have found that the annealing behaviour of oxygen related defect concentration has a strong dependence on the thermal history for both systems.","PeriodicalId":223226,"journal":{"name":"CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389)","volume":"96 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115692317","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A preliminary study on VDMOS and IGBT encapsulation, reliability and lifetime killing VDMOS和IGBT封装、可靠性和寿命抑制的初步研究

CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389) Pub Date : 1999-10-05 DOI: 10.1109/SMICND.1999.810386

M. Badila, X. Jordà, J. Millán, P. Godignon, V. Banu, G. Brezeanu, M.U. Spenea, L. Staicu, E. Iliescu, M. Bazu, C. Codreanu

引用次数: 2

Pulsed laser deposition of metallic oxide thin films for microelectronic applications 微电子用脉冲激光沉积金属氧化物薄膜

CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389) Pub Date : 1999-10-05 DOI: 10.1109/SMICND.1999.810379

M. Varela, V. Trtík, C. Guerrero, J. Roldán, F. Benı́tez, C. Ferrater, F. Sánchez, M. Bibes, R. Rubi, L. Fàbrega, B. Martínez, J. Fontcuberta

{"title":"Pulsed laser deposition of metallic oxide thin films for microelectronic applications","authors":"M. Varela, V. Trtík, C. Guerrero, J. Roldán, F. Benı́tez, C. Ferrater, F. Sánchez, M. Bibes, R. Rubi, L. Fàbrega, B. Martínez, J. Fontcuberta","doi":"10.1109/SMICND.1999.810379","DOIUrl":"https://doi.org/10.1109/SMICND.1999.810379","url":null,"abstract":"The use of ultraviolet lasers to deposit thin films was scarce until the discovery of the high temperature superconductors. The excellent properties obtained by means of excimer lasers contributed to the development of the technique, and today pulsed laser deposition is a powerful technique to prepare not only superconductor ,films, but also a great variety of materials with enormous potential in electronic devices. In particular, it is the most suitable technique to grow oxide thin films, allowing an easy and reproducible way to prepare epita<xial . films of complex stoichiometries. Recently, important progress has been produced on oxides with a wide range of functional properties: dielectric, conductor, superconductor, ferroelectric, optical, magnetic, and magnetoresistive. The success promises the future development of a new microelectronics based on epitaxial oxides. In this paper, we present our results in pulsed laser deposition of dielectrics (yttria-stabilised zirconia, CeO) SrTi03), conductor (SrRuOJ, ferroelectric (PbZr,yTil,03), and magnetoresistive (La2 Jrl &fn03). Properties of epitaxial single layers and heterostructures are presented, with particular emphasis in the study and control of the crystal structure and the morphology. Films deposited on LaA103(OOl) and SrTi03(O01) substrates are compared with those grown on technological Si(OO1). The possibilities of oxides in microelectronics are exemplijkd by Al/PbZrXTil,03/SrRuO3 and YBa2Cu30~/SrTi03/La2,3Srl~3Mn03 heterostructures","PeriodicalId":223226,"journal":{"name":"CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389)","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115779818","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Image of phonon spectrum in the 1/f noise of semiconductors 半导体1/f噪声声子谱图

CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389) Pub Date : 1999-10-05 DOI: 10.1109/SMICND.1999.810443

M. Mihaila

引用次数: 0

A fuzzy pattern recognition method embedded in a robot controller 一种嵌入机器人控制器的模糊模式识别方法

CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389) Pub Date : 1999-10-05 DOI: 10.1109/SMICND.1999.810525

N. Varachiu

引用次数: 1

The influence of buried insulator type and film thickness on threshold voltage of a partially and fully depleted SOI-MOSFET 埋地绝缘子类型和薄膜厚度对部分耗尽和完全耗尽SOI-MOSFET阈值电压的影响

CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389) Pub Date : 1999-10-05 DOI: 10.1109/SMICND.1999.810453

C. Ravariu, A. Rusu, D. Dobrescu, L. Dobrescu, F. Ravariu

引用次数: 4

An architectural survey and modeling of data cache memories in Verilog HDL Verilog HDL中数据缓存存储器的架构调查和建模

CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389) Pub Date : 1999-10-05 DOI: 10.1109/SMICND.1999.810448

D. Crisu

引用次数: 4

SPICE-the fourth decade analog and mixed-signal simulation-a state of the art spice——模拟和混合信号模拟的第四个十年——是最先进的技术

CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389) Pub Date : 1999-10-05 DOI: 10.1109/SMICND.1999.810383

A. Vladimirescu

引用次数: 4