Pulsed laser deposition of metallic oxide thin films for microelectronic applications

CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389) Pub Date : 1999-10-05 DOI:10.1109/SMICND.1999.810379

M. Varela, V. Trtík, C. Guerrero, J. Roldán, F. Benı́tez, C. Ferrater, F. Sánchez, M. Bibes, R. Rubi, L. Fàbrega, B. Martínez, J. Fontcuberta

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Abstract

The use of ultraviolet lasers to deposit thin films was scarce until the discovery of the high temperature superconductors. The excellent properties obtained by means of excimer lasers contributed to the development of the technique, and today pulsed laser deposition is a powerful technique to prepare not only superconductor ,films, but also a great variety of materials with enormous potential in electronic devices. In particular, it is the most suitable technique to grow oxide thin films, allowing an easy and reproducible way to prepare epita

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微电子用脉冲激光沉积金属氧化物薄膜

在发现高温超导体之前，使用紫外激光沉积薄膜是很少见的。准分子激光所获得的优异性能促进了该技术的发展，今天脉冲激光沉积不仅是制备超导体、薄膜的一种强大的技术，而且在电子器件中也具有巨大的潜力。特别是，它是最适合生长氧化物薄膜的技术，允许一种简单和可重复的方法制备epita

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