Image of phonon spectrum in the 1/f noise of semiconductors

Abstract

A close connection between 1/f noise parameter and the phonon density of states is suggested. According to this hypothesis, the temperature dependence of the 1/f noise parameter would follow the energy dependence of the phonon density of states (PDOS). Existing noise data for GaAs are compared with the corresponding PDOS. Striking resemblances are found, such that the temperature dependence of the 1/f noise parameter seems to be the image of the phonon spectrum. Consequently, a connection between the activation energy distribution function and PDOS is revealed and lattice anharmonicity appears to naturally affect the frequency exponent. These results strongly support the idea that 1/f noise in semiconductors is generated by equilibrium atomic motion.