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CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389)最新文献

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Investigation of optical crosstalk in monolithically integrated photodetectors arrays for multichannel detection systems 多通道探测系统单片集成光电探测器阵列中光串扰的研究
CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389) Pub Date : 1999-10-05 DOI: 10.1109/SMICND.1999.810595
M. Purica, E. Budianu, D. Cristea, A. Rusanu
{"title":"Investigation of optical crosstalk in monolithically integrated photodetectors arrays for multichannel detection systems","authors":"M. Purica, E. Budianu, D. Cristea, A. Rusanu","doi":"10.1109/SMICND.1999.810595","DOIUrl":"https://doi.org/10.1109/SMICND.1999.810595","url":null,"abstract":"The paper presents an investigation of optical crosstalk for monolithically integrated photodiodes arrays based on lateral collection of photogenerated carriers in the optical active layer of semiconductor substrate. The analysis gives the possibility to optimize the photodetectors structures in order to reduce the crosstalk in array independently of semiconductor substrate. Two types of photodiodes arrays were experimented on silicon with rectangular geometry of 200/200 /spl mu/m having a minimum crosstalk (/spl sim/10/sup -4/) for 0.9 /spl mu/m radiation wavelength.","PeriodicalId":223226,"journal":{"name":"CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125021073","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Theoretical and numerical investigation of SiC JFET and MOSFET at 6.5 kV 6.5 kV SiC JFET和MOSFET的理论与数值研究
CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389) Pub Date : 1999-10-05 DOI: 10.1109/SMICND.1999.810460
A. Mihaila, F. Udrea, R. Azar, J. Liang, G. Amaratunga, A. Rusu, G. Brezeanu
{"title":"Theoretical and numerical investigation of SiC JFET and MOSFET at 6.5 kV","authors":"A. Mihaila, F. Udrea, R. Azar, J. Liang, G. Amaratunga, A. Rusu, G. Brezeanu","doi":"10.1109/SMICND.1999.810460","DOIUrl":"https://doi.org/10.1109/SMICND.1999.810460","url":null,"abstract":"This paper presents a preliminary theoretical and numerical investigation of 4H-SiC JFET and MOSFET at 6.5 kV. To improve the on-state/breakdown performance of the JFET, buried layers in conjunction with a highly doped buffer layer have been used. Trench technology has been employed for the MOSFET. The devices were simulated and optimized using the MEDICI simulator. From a comparison between the two devices, it turns out that the JFET offers a better on-state/breakdown trade-off, while the trench MOSFET has the advantage of MOS-control.","PeriodicalId":223226,"journal":{"name":"CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389)","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132458761","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Carrier transport in laser-recrystallized polysilicon layers for microelectronic devices and sensors 用于微电子器件和传感器的激光再结晶多晶硅层中的载流子输运
CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389) Pub Date : 1999-10-05 DOI: 10.1109/SMICND.1999.810529
A. Druzhinin, E. Lavitska, I. Maryamova, Y. Khoverko
{"title":"Carrier transport in laser-recrystallized polysilicon layers for microelectronic devices and sensors","authors":"A. Druzhinin, E. Lavitska, I. Maryamova, Y. Khoverko","doi":"10.1109/SMICND.1999.810529","DOIUrl":"https://doi.org/10.1109/SMICND.1999.810529","url":null,"abstract":"Numerical simulation and experimental studies of the carrier transport in polycrystalline silicon-on-insulator layers (SOI) is an important stage in design of microelectronic devices based on this material. An aim of the work was to study the electrical resistivity of boron-doped polycrystalline silicon in a wide ranges of dopant densities and temperatures, including the case of external applied strain, and to reveal its change due to the laser treatment. A special attention was paid to the temperature behaviour of electrical and piezoresistive characteristics due to their importance for microelectronic circuits and, especially, sensors operating in wide temperature ranges.","PeriodicalId":223226,"journal":{"name":"CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130908983","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Measurements in transient regimes after steep humidity changes: a method for investigating the reaction sites in SnO/sub 2/ gas sensors 湿度急剧变化后瞬态状态的测量:SnO/sub - 2/气体传感器中反应部位的研究方法
CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389) Pub Date : 1999-10-05 DOI: 10.1109/SMICND.1999.810583
R. Ionescu, A. Vancu, A. Tomescu
{"title":"Measurements in transient regimes after steep humidity changes: a method for investigating the reaction sites in SnO/sub 2/ gas sensors","authors":"R. Ionescu, A. Vancu, A. Tomescu","doi":"10.1109/SMICND.1999.810583","DOIUrl":"https://doi.org/10.1109/SMICND.1999.810583","url":null,"abstract":"Most information about the gas-sensing properties of polycrystalline tin dioxide in the usual commercial gas-sensors is furnished only by steady-state conductance measurements. However many aspects of the surface-gas interaction, and thus of the operation of gas sensors are still unclear. Broadening the field of experimental methods for investigating surface phenomena is therefore very necessary.","PeriodicalId":223226,"journal":{"name":"CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125577612","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Visible light emission from reverse-biased silicon nanometer-scale diode-antifuses 反向偏置硅纳米级二极管防熔丝的可见光发射
CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389) Pub Date : 1999-10-05 DOI: 10.1109/SMICND.1999.810586
V. Houtsma, J. Holleman, N. Akil, L.M. Phoung, V. Zieren, A. van den Berg, H. Walling, P. Woerlee
{"title":"Visible light emission from reverse-biased silicon nanometer-scale diode-antifuses","authors":"V. Houtsma, J. Holleman, N. Akil, L.M. Phoung, V. Zieren, A. van den Berg, H. Walling, P. Woerlee","doi":"10.1109/SMICND.1999.810586","DOIUrl":"https://doi.org/10.1109/SMICND.1999.810586","url":null,"abstract":"Silicon nanometer-scale diodes have been fabricated to emit light in the visible range at low power consumption. Such structures are candidates for emitter elements in Si-based optical interconnect schemes. Spectral measurements of Electroluminescence (EL) on the reverse-biased nanometer-scale diodes brought into breakdown have been carried out over the photon energy range of 1.4-2.8 eV. Previously proposed mechanisms for avalanche emission from conventional silicon p-n junctions are discussed in order to understand the origin of the emission. Also the stability of the diodes has been tested. Results indicate that our nanometer-scale diodes are basically high quality devices. Furthermore due to the nanometer-scale dimensions, very high electrical fields and current densities are possible at low power consumption. This makes these diodes an excellent candidate to be utilized as a light source in Si-based sensors and actuator applications.","PeriodicalId":223226,"journal":{"name":"CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125156788","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A simple method to evaluate the mobile charge effect on the transition capacitance of an asymmetrical PN junction 一种评估移动电荷对非对称PN结过渡电容影响的简单方法
CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389) Pub Date : 1999-10-05 DOI: 10.1109/SMICND.1999.810449
A. Mihaila, A. Rusu
{"title":"A simple method to evaluate the mobile charge effect on the transition capacitance of an asymmetrical PN junction","authors":"A. Mihaila, A. Rusu","doi":"10.1109/SMICND.1999.810449","DOIUrl":"https://doi.org/10.1109/SMICND.1999.810449","url":null,"abstract":"A simple method to evaluate the effect of the mobile carriers on the transition capacitance of the asymmetrical junctions at very low voltages is proposed. The method takes into account that the presence of both electrons and holes at the depletion region boundaries is equivalent with an ionic charge decrease. Quantitatively the method considers that this decrease amounts to a shrink of the depletion region width (w). With the new approach, the built-in voltage in the Schottky formula, should be replaced by: V/sub bi/=2/spl Phi//sub F/+(1.4+2.5)kT/q where /spl Phi//sub F/ is the Fermi potential of the low-doped side of the junction.","PeriodicalId":223226,"journal":{"name":"CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131636482","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A new type of monolithic broadband frequency doubler by using an array of pseudomorphic HEMTs 基于伪晶hemt阵列的新型单片宽带倍频器
CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389) Pub Date : 1999-10-05 DOI: 10.1109/SMICND.1999.810518
S. Simion
{"title":"A new type of monolithic broadband frequency doubler by using an array of pseudomorphic HEMTs","authors":"S. Simion","doi":"10.1109/SMICND.1999.810518","DOIUrl":"https://doi.org/10.1109/SMICND.1999.810518","url":null,"abstract":"In this paper, the author proposes a new type of monolithic frequency doubler, consisting of an array of pseudomorphic HEMTs, separated by inductances. As equivalent circuit, the doubler contains two nonlinear lines, one for the gate and one for the drain, which are coupled by the gate to drain capacitance. It is shown that the frequency bandwidth of this type of doubler is much larger compared to those obtain by other means. For the example presented in this paper, the +/-3 dB frequency bandwidth exceeds three octaves with a conversion efficiency of /spl sim/30%.","PeriodicalId":223226,"journal":{"name":"CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389)","volume":"76 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124451289","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Energy levels in a finite parabolic quantum dot under applied electric fields 外加电场作用下有限抛物量子点的能级
CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389) Pub Date : 1999-10-05 DOI: 10.1109/SMICND.1999.810531
E. Niculescu, M. Cristea
{"title":"Energy levels in a finite parabolic quantum dot under applied electric fields","authors":"E. Niculescu, M. Cristea","doi":"10.1109/SMICND.1999.810531","DOIUrl":"https://doi.org/10.1109/SMICND.1999.810531","url":null,"abstract":"We have calculated the energies of the ground and the first excited states of an electron in a spherical GaAs-Ga/sub 1-x/Al/sub x/As quantum dot with parabolic confinement in the case of both finite and infinite barrier height. We have studied the electric field dependence of the ground state energy of an electron spatially confined in this structure. We have found that the finite height of the confining barrier considerably contributes to the change of the ground state energies, especially for the small dot radii and in the presence of a strong applied electric field.","PeriodicalId":223226,"journal":{"name":"CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389)","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134194606","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Current flow through a nonuniform metal-GaAs contact 电流通过非均匀金属-砷化镓触点
CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389) Pub Date : 1999-10-05 DOI: 10.1109/SMICND.1999.810513
A. Belyaev, G.K. Beketov, G. E. Chaika, R. Konakova, V. Lyapin, V.V. Milenin, O.E. Rengevych, E. Soloviev, D.I. Voitsikhovskiy, N. S. Boltovets, V. N. Ivanov
{"title":"Current flow through a nonuniform metal-GaAs contact","authors":"A. Belyaev, G.K. Beketov, G. E. Chaika, R. Konakova, V. Lyapin, V.V. Milenin, O.E. Rengevych, E. Soloviev, D.I. Voitsikhovskiy, N. S. Boltovets, V. N. Ivanov","doi":"10.1109/SMICND.1999.810513","DOIUrl":"https://doi.org/10.1109/SMICND.1999.810513","url":null,"abstract":"The current flow mechanisms were studied in the 77 to 395 K temperature range for the Au-TiB/sub 2/-GaAs barrier structures, both initially nonuniform and annealed in the argon atmosphere for 60 s at 400 and 600/spl deg/C. Their I-V curves substantially depend on the degree of structural-chemical uniformity of the active area.","PeriodicalId":223226,"journal":{"name":"CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389)","volume":"87 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129095350","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Structural and dimensional effects in electrical conductivity of SnO/sub 2/ thin films used for gas sensors 气体传感器用SnO/sub /薄膜电导率的结构和尺寸效应
CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389) Pub Date : 1999-10-05 DOI: 10.1109/SMICND.1999.810594
A. Ivashchenko, I. Kerner
{"title":"Structural and dimensional effects in electrical conductivity of SnO/sub 2/ thin films used for gas sensors","authors":"A. Ivashchenko, I. Kerner","doi":"10.1109/SMICND.1999.810594","DOIUrl":"https://doi.org/10.1109/SMICND.1999.810594","url":null,"abstract":"Electrical conductivity in SnO/sub 2/ thin films near 3D-2D transition is studied within the framework of percolation theory,. Four various approaches modeling film microstructure were used. The model of weekly textured polycrystal gives the best agreement between experimental and theoretical data.","PeriodicalId":223226,"journal":{"name":"CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134619976","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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