Current flow through a nonuniform metal-GaAs contact

CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389) Pub Date : 1999-10-05 DOI:10.1109/SMICND.1999.810513

A. Belyaev, G.K. Beketov, G. E. Chaika, R. Konakova, V. Lyapin, V.V. Milenin, O.E. Rengevych, E. Soloviev, D.I. Voitsikhovskiy, N. S. Boltovets, V. N. Ivanov

引用次数: 1

Abstract

The current flow mechanisms were studied in the 77 to 395 K temperature range for the Au-TiB/sub 2/-GaAs barrier structures, both initially nonuniform and annealed in the argon atmosphere for 60 s at 400 and 600/spl deg/C. Their I-V curves substantially depend on the degree of structural-chemical uniformity of the active area.

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电流通过非均匀金属-砷化镓触点

研究了Au-TiB/sub - 2/-GaAs势垒结构在77 ~ 395 K温度范围内的电流流动机制，这些势垒结构在400和600℃的氩气气氛中退火60 s。它们的I-V曲线在很大程度上取决于活性区结构化学均匀性的程度。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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