Bi/sub 4/Ti/sub 3/O/sub 12/ Si异质结构的光伏特性

CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389) Pub Date : 1999-10-05 DOI:10.1109/SMICND.1999.810546

L. Pintilie, I. Pintilie, M. Alexe

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引用次数: 0

摘要

研究了Bi/sub 4/Ti/sub 3/O/sub 12/ Si异质结构在250 ~ 1100 nm波长范围内的光电性能。归一化光谱分布在400 nm、500 nm、865 nm和1025 nm四个中心波段。这些波段对应的峰的相对振幅取决于退火温度和铁电极化。

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Photovoltaic properties of the Bi/sub 4/Ti/sub 3/O/sub 12//Si heterostructures

Photovoltaic properties of the Bi/sub 4/Ti/sub 3/O/sub 12//Si heterostructures were investigated in the 250-1100 nm wavelength range. Four bands centered on 400 nm, 500 nm, 865 nm and 1025 nm are observed in the normalized spectral distributions. The relative amplitude of the peaks corresponding to these bands depends on the annealing temperature and ferroelectric polarization.

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CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389)

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