2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)最新文献_第3页

A novel analytical model of a SiC MOSFET 一种新的SiC MOSFET解析模型

2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595) Pub Date : 2002-08-07 DOI: 10.1109/MIEL.2002.1003295

R. Ramović, M. Jevtic, J. Hadzi-Vukovic, D. Randjelović

引用次数: 10

Access to microsystem technology: the CMP services solution 获取微系统技术:CMP服务解决方案

2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595) Pub Date : 2002-08-07 DOI: 10.1109/MIEL.2002.1003147

B. Charlot, B. Courtois, H. Delori, J.-F. Paillotin, K. Torki

引用次数: 0

Planar Schottky diodes with low barrier height for microwave detector application 微波探测器用低势垒高度平面肖特基二极管

2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595) Pub Date : 2002-08-07 DOI: 10.1109/MIEL.2002.1003205

V. Shashkin, Y. Chechenin, V. Danil’tsev, O. Khrykin, A. Maslovsky, A. Murel, V. Vaks

{"title":"Planar Schottky diodes with low barrier height for microwave detector application","authors":"V. Shashkin, Y. Chechenin, V. Danil’tsev, O. Khrykin, A. Maslovsky, A. Murel, V. Vaks","doi":"10.1109/MIEL.2002.1003205","DOIUrl":"https://doi.org/10.1109/MIEL.2002.1003205","url":null,"abstract":"The results of designing and investigation of a sensitivity of microwave detectors, based on planar GaAs diodes with low effective Schottky barrier height are reported. Low pressure metalorganic chemical vapor deposition (MOCVD) technology was used for the modification of the effective Schottky barrier height by means of precise /spl delta/-doping of near-surface layer and for successive deposition of an aluminium film in non-interrupted growth run. A complete quantum-mechanical numerical simulation of the effect produced by /spl delta/-doping on the current-voltage characteristic of the modified diodes is carried out. Comparison of computational results with the experimental characteristics of diodes shows a rather good agreement. Analysis of the carried-out research has allowed one to choose optimum parameters of /spl delta/-layers for producing low barrier diodes (/spl sim/0.2 eV) with a reasonable ideality factor (n<1.5). The best performance of the low barrier diode corresponding to /spl gamma/=5000 V/W and NEP=(3/spl divide/6)/spl middot/10/sup -12/ W/spl middot/Hz/sup -1/2/ at 150 GHz was at zero bias voltage.","PeriodicalId":221518,"journal":{"name":"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132160464","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 6

Semiconductor devices for fiber optic communication systems 光纤通信系统用半导体器件

2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595) Pub Date : 2002-08-07 DOI: 10.1109/MIEL.2002.1003154

L. Lunardi

引用次数: 0

FSM non-minimal state encoding for low power 低功耗FSM非最小状态编码

2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595) Pub Date : 2002-08-07 DOI: 10.1109/MIEL.2002.1003330

I. Lemberski, M. Koegst, S. Cotofana, B. Juurlink

{"title":"FSM non-minimal state encoding for low power","authors":"I. Lemberski, M. Koegst, S. Cotofana, B. Juurlink","doi":"10.1109/MIEL.2002.1003330","DOIUrl":"https://doi.org/10.1109/MIEL.2002.1003330","url":null,"abstract":"In this paper, we focus our attention on the problem of FSM state encoding for low power. In contrast to many publications where probabilistic approach to power estimation is offered, we consider power measurement based on given user-specified input sequence. Although the power dissipation depends on several parameters (register and output switching activity, complexity of combinational part, capacitance load on the gate), switching is the most important source of power dissipation. Our goal is to develop an encoding procedure which minimizes register switching activity. We start with a highly redundant (seed) encoding and minimize its length while minimizing the register switching activity. Unlike previous works, we don't restrict encoding final length (only register switching activity is considered). Therefore, final encoding length may differ from the minimal one. We tested our encoding procedure on several benchmarks from the MCNC set. The experiments show that in many cases, power dissipation obtained using our encoding (generally, of non-minimal length) is less than one achieved when encoding of minimal length is generated.","PeriodicalId":221518,"journal":{"name":"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122103318","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 8

Aging of copper-nickel-cobalt manganite NTC thermistors [Cu/sub 0.1/Ni/sub 0.8/Co/sub 0.2/Mn/sub 1.9/O/sub 4/] 铜镍钴锰矿NTC热敏电阻的老化[Cu/sub 0.1/Ni/sub 0.8/Co/sub 0.2/Mn/sub 1.9/O/sub 4/]

2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595) Pub Date : 2002-08-07 DOI: 10.1109/MIEL.2002.1003215

O. Mrooz, I. Hadzarnan, M. Vakiv, O. Shpotyuk, J. Plewa, H. Altenburg, H. Uphoff

引用次数: 7

In-process diagnostics of recombination centres in structures of large-area solar cells 大面积太阳能电池结构中重组中心的过程诊断

2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595) Pub Date : 2002-08-07 DOI: 10.1109/MIEL.2002.1003202

V. Benda, J. Radil, T. Quan

引用次数: 0

Nonlinear effects in magnetic angular position sensor with integrated flux concentrator 集成磁通集中器磁角位置传感器的非线性效应

2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595) Pub Date : 2002-08-07 DOI: 10.1109/MIEL.2002.1003180

P. Drljaca, M. Demierre, C. Schott, R. Popovic

引用次数: 17

Internet-based software for teaching test of digital circuits 基于网络的数字电路教学测试软件

2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595) Pub Date : 2002-08-07 DOI: 10.1109/MIEL.2002.1003344

R. Ubar, E. Orasson, H. Wuttke

引用次数: 12

Simulation of nanometer-scale MOSFET's with ultra-thin gate oxide including full 2-dimensional quantum mechanical effects and gate tunneling current 超薄栅极氧化物纳米MOSFET的模拟，包括全二维量子力学效应和栅极隧道电流

2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595) Pub Date : 2002-08-07 DOI: 10.1109/MIEL.2002.1003292

Yutao Ma, Lifeng Chen, Jing Wang, L. Tian, Zhiping Yu, Litian Liu, Zhijian Li

引用次数: 0