大面积太阳能电池结构中重组中心的过程诊断

2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595) Pub Date : 2002-08-07 DOI:10.1109/MIEL.2002.1003202

V. Benda, J. Radil, T. Quan

{"title":"大面积太阳能电池结构中重组中心的过程诊断","authors":"V. Benda, J. Radil, T. Quan","doi":"10.1109/MIEL.2002.1003202","DOIUrl":null,"url":null,"abstract":"The paper refers to a possibility to check carrier lifetime in the area close to the PN junction measuring forward characteristics at low current, densities, where generation-recombination portion of the current density dominates. The measurement allows one to determine energy level of dominant recombination centres and evaluate their concentration. The carrier lifetime in volume of the cell body can be evaluated using local irradiation of the surface of large-area solar cells with a laser diode (/spl lambda/=870 nm) from measured values of open circuit voltage V/sub oc/. The method can give information about recombination centres distribution in large-area solar cells. From V/sub oc/ distribution, position and extent of local defects can also be determined. Solar cell diagnostic methods can be used to investigate the influence of technology on characteristics of solar cells, with the aim of increasing efficiency and reliability of solar cells.","PeriodicalId":221518,"journal":{"name":"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"In-process diagnostics of recombination centres in structures of large-area solar cells\",\"authors\":\"V. Benda, J. Radil, T. Quan\",\"doi\":\"10.1109/MIEL.2002.1003202\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The paper refers to a possibility to check carrier lifetime in the area close to the PN junction measuring forward characteristics at low current, densities, where generation-recombination portion of the current density dominates. The measurement allows one to determine energy level of dominant recombination centres and evaluate their concentration. The carrier lifetime in volume of the cell body can be evaluated using local irradiation of the surface of large-area solar cells with a laser diode (/spl lambda/=870 nm) from measured values of open circuit voltage V/sub oc/. The method can give information about recombination centres distribution in large-area solar cells. From V/sub oc/ distribution, position and extent of local defects can also be determined. Solar cell diagnostic methods can be used to investigate the influence of technology on characteristics of solar cells, with the aim of increasing efficiency and reliability of solar cells.\",\"PeriodicalId\":221518,\"journal\":{\"name\":\"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-08-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MIEL.2002.1003202\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MIEL.2002.1003202","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

本文提到了在低电流密度下测量PN结附近区域载流子寿命的可能性，其中电流密度的产生-重组部分占主导地位。测量允许一个确定的能量水平的主要重组中心和评估他们的浓度。利用开路电压V/sub /测量值，用激光二极管(/spl λ /=870 nm)局部照射大面积太阳能电池表面，可以计算出电池体载流子的体积寿命。该方法可以给出大面积太阳能电池中复合中心分布的信息。根据V/sub /分布，还可以确定局部缺陷的位置和程度。太阳能电池诊断方法可用于研究技术对太阳能电池特性的影响，目的是提高太阳能电池的效率和可靠性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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In-process diagnostics of recombination centres in structures of large-area solar cells

The paper refers to a possibility to check carrier lifetime in the area close to the PN junction measuring forward characteristics at low current, densities, where generation-recombination portion of the current density dominates. The measurement allows one to determine energy level of dominant recombination centres and evaluate their concentration. The carrier lifetime in volume of the cell body can be evaluated using local irradiation of the surface of large-area solar cells with a laser diode (/spl lambda/=870 nm) from measured values of open circuit voltage V/sub oc/. The method can give information about recombination centres distribution in large-area solar cells. From V/sub oc/ distribution, position and extent of local defects can also be determined. Solar cell diagnostic methods can be used to investigate the influence of technology on characteristics of solar cells, with the aim of increasing efficiency and reliability of solar cells.

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2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)

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