A novel analytical model of a SiC MOSFET

Abstract

This paper presents a novel analytical model for simulation of characteristics of a n-channel MOSFET based on silicon-carbide (SiC). Using known experimental results, a semiempirical relation for carrier mobility (/spl mu/) dependence on electric field intensity, dopant concentration and temperature was formulated. Based on this relation appropriate analytical mathematical-physical model for simulation of current-voltage characteristics, transconductance and conductance of MOSFET were developed. All models were formulated taking into account, among other effects, the dependence of threshold voltage on temperature and impurity concentration in the channel, as well as the effect of the channel narrowing. Using the proposed model a simulation algorithm was designed and a simulation of the MOSFET's performance was performed. Results of the simulation are graphically presented in and discussed.