Superlattices and Microstructures最新文献_第5页

Switchable absorbing, reflecting, and transmitting metasurface by employing vanadium dioxide on the same frequency 采用相同频率的二氧化钒可切换吸收、反射和透射超表面

IF 3.1 3区物理与天体物理

Superlattices and Microstructures Pub Date : 2022-02-01 DOI: 10.1016/j.spmi.2021.107109

Yunpeng Liu , Lin Dong , Jiangshan Zheng , Mohd Faizul Mohd Sabri , Nazia Abdul Majid , Suriani Ibrahim

引用次数: 2

Enhancement in optoelectronic properties of lanthanum co-doped CdO: Zn thin films for TCO applications 用于TCO的镧共掺杂CdO: Zn薄膜光电性能的增强

IF 3.1 3区物理与天体物理

Superlattices and Microstructures Pub Date : 2022-02-01 DOI: 10.1016/j.spmi.2021.107097

R. Sarath babu , Y. Narasimha murthy , S. Vinoth , R.S. Rimal Isaac , P. Mohanraj , V. Ganesh , H. Algarni , S. AlFaify

{"title":"Enhancement in optoelectronic properties of lanthanum co-doped CdO: Zn thin films for TCO applications","authors":"R. Sarath babu , Y. Narasimha murthy , S. Vinoth , R.S. Rimal Isaac , P. Mohanraj , V. Ganesh , H. Algarni , S. AlFaify","doi":"10.1016/j.spmi.2021.107097","DOIUrl":"10.1016/j.spmi.2021.107097","url":null,"abstract":"<div>This work reports on structural, electrical, optical, and photosensing properties of La and Zn co-doped CdO thin films. The co-doped CdO thin films were prepared on glass substrates using the nebulizer spray method at 350 °C. From the structural analysis, a decrease in the crystallite size from 20 to 16 nm is observed against the incorporation of La in CdO:Zn. Inclusion of La in CdO:Zn has also changed the surface morphology with a reduction in the roughness of the thin film samples. EDX analysis confirmed the incorporation of La with CdO: Zn in the prepared films. The bandgap value of the prepared samples increased with the increase in La concentration. A 1.5 wt% of La co-doped with CdO:Zn thin film sample produces low resistivity of 6.81 × 10-4 Ωcm and a better figure of merit of 8.4 × 10 −4 Ω-1. Finally, the fabricated photodetector with 1.5 wt% of La co-doped with CdO:Zn thin film shows a higher photocurrent and an ideality factor value of 3.4. The photosensing properties of the fabricated (p-Si/CdO–Zn–La (1.5%)) photodetector shows a higher responsivity (R) value of 1.18 AW-1, specific detectivity (D*) value of 4.90 × 109 Jones, and external quantum efficiency (EQE) value of 274% with 3.0 mW/cm2 light intensity. The switching characteristics of the photodetector show a faster rise time (2.9s) and fall time (3.6s) suggesting the fabricated device suitable for photosensing applications.</div>","PeriodicalId":22044,"journal":{"name":"Superlattices and Microstructures","volume":null,"pages":null},"PeriodicalIF":3.1,"publicationDate":"2022-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"48211665","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 7

Compact analytical modeling of underlap gate stack graded channel junction accumulation mode junctionless FET in subthreshold regime 亚阈值区下叠层栅-叠层渐变沟道结累积模式无结FET的紧凑分析建模

IF 3.1 3区物理与天体物理

Superlattices and Microstructures Pub Date : 2022-02-01 DOI: 10.1016/j.spmi.2021.107110

Ankush Chattopadhyay , Chandan K. Sarkar , Chayanika Bose

{"title":"Compact analytical modeling of underlap gate stack graded channel junction accumulation mode junctionless FET in subthreshold regime","authors":"Ankush Chattopadhyay , Chandan K. Sarkar , Chayanika Bose","doi":"10.1016/j.spmi.2021.107110","DOIUrl":"10.1016/j.spmi.2021.107110","url":null,"abstract":"<div>This paper presents the compact analytical model of underlap gate stack (GS) graded channel (GC) junction accumulation mode (JAM) junctionless (JL) FET. At first, a comparative analysis between the two different graded channel schemes and non-graded channel is performed based on ION, IOFF and ION/IOFF ratio. The scheme that yields the higher ION/IOFF ratio along with smaller IOFF, is adopted in the proposed JL FET for further analysis. The 2D analytical modeling of the GS-GC-JAM-JL FET deals with the determination of surface potential, threshold voltage, subthreshold drain current, DIBL and subthreshold swing. Results obtained from analytical model and simulations are compared and an excellent match is found. Thus the present paper establishes the outstanding ability of proposed underlap GS-GC-JAM-JL FET architecture to shield the short channel effects without sacrificing its performance, and therefore, proves it as a potential candidate for ultra-low power applications.</div>","PeriodicalId":22044,"journal":{"name":"Superlattices and Microstructures","volume":null,"pages":null},"PeriodicalIF":3.1,"publicationDate":"2022-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"41899941","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Performance evaluation of gate engineered InAs–Si heterojunction surrounding gate TFET 围绕栅极TFET的栅极工程InAs–Si异质结的性能评价

IF 3.1 3区物理与天体物理

Superlattices and Microstructures Pub Date : 2022-02-01 DOI: 10.1016/j.spmi.2021.107099

M. Sathishkumar , T.S. Arun Samuel , K. Ramkumar , I. Vivek Anand , S.B. Rahi

{"title":"Performance evaluation of gate engineered InAs–Si heterojunction surrounding gate TFET","authors":"M. Sathishkumar , T.S. Arun Samuel , K. Ramkumar , I. Vivek Anand , S.B. Rahi","doi":"10.1016/j.spmi.2021.107099","DOIUrl":"10.1016/j.spmi.2021.107099","url":null,"abstract":"<div>In semiconductor industry, at nanoscale dimensions, numerous field effect devices have been proposed and investigated for further improvement in performance of low power circuit and system. In the present research report, a novel low power FET device structure namely: Surrounding Gate Triple Material Heterojunction Tunnel Field Effect Transistor (SGTM-heTFET) has been proposed with the analytical modeling approach. The benefits of surrounding gate and tunnel FETs are coupled to create a new structure, to decrease short channel effects. Three different gate materials with different work functions replace the gate material that surrounds the device. An analytical model of surface potential(ψ), electric field(E) and drain current (IDS) have been developed for SGTM-heTFET. With the use of low work function material such as 4.0eV, 4.6eV and 4.0eV, the proposed model shows a better ON current of 10−5 A/μm for a VGS of 0.7V, ON-OFF ratio of 1010 with the sub-threshold swing of 50mV/dec. The developed model's for SGTM-heTFET shows excellent device characteristics and have been verified using TCAD simulation, ensuring the model's accuracy.</div>","PeriodicalId":22044,"journal":{"name":"Superlattices and Microstructures","volume":null,"pages":null},"PeriodicalIF":3.1,"publicationDate":"2022-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"44593867","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 5

Enhanced electronic and optical responses of nitrogen- or boron-doped BeO monolayer: First principle computation 氮或硼掺杂BeO单层增强的电子和光学响应：第一性原理计算

IF 3.1 3区物理与天体物理

Superlattices and Microstructures Pub Date : 2022-02-01 DOI: 10.1016/j.spmi.2021.107102

Nzar Rauf Abdullah , Botan Jawdat Abdullah , Hunar Omar Rshid , Chi-Shung Tang , Andrei Manolescu , Vidar Gudmundsson

{"title":"Enhanced electronic and optical responses of nitrogen- or boron-doped BeO monolayer: First principle computation","authors":"Nzar Rauf Abdullah , Botan Jawdat Abdullah , Hunar Omar Rshid , Chi-Shung Tang , Andrei Manolescu , Vidar Gudmundsson","doi":"10.1016/j.spmi.2021.107102","DOIUrl":"10.1016/j.spmi.2021.107102","url":null,"abstract":"<div>In this work, the electronic and optical properties of a Nitrogen (N) or a Boron (B) doped BeO monolayer are investigated in the framework of density functional theory. It is known that the band gap of a BeO monolayer is large leading to poor material for optoelectronic devices in a wide range of energy. Using N or B dopant atoms, we find that the band gap can be tuned and the optical properties can be improved. In the N(B)-doped BeO monolayer, the Fermi energy slightly crosses the valence (conduction) band forming a degenerate semiconductor structure. The N or B atoms thus generate new states around the Fermi energy increasing the optical conductivity in the visible light region. Furthermore, the influences of dopant atoms on the electronic structure, the stability, the dispersion energy, the density of states, and optical properties such as the plasmon frequency, the excitation spectra, the dielectric functions, the static dielectric constant, and the electron energy loss function are discussed for different directions of polarizations for the incoming electric field.</div>","PeriodicalId":22044,"journal":{"name":"Superlattices and Microstructures","volume":null,"pages":null},"PeriodicalIF":3.1,"publicationDate":"2022-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"48676749","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 4

DFT investigation of H2S and SO2 adsorption on Zn modified MoSe2 锌修饰MoSe2吸附H2S和SO2的DFT研究

IF 3.1 3区物理与天体物理

Superlattices and Microstructures Pub Date : 2022-02-01 DOI: 10.1016/j.spmi.2021.107098

Ahmad I. Ayesh

{"title":"DFT investigation of H2S and SO2 adsorption on Zn modified MoSe2","authors":"Ahmad I. Ayesh","doi":"10.1016/j.spmi.2021.107098","DOIUrl":"10.1016/j.spmi.2021.107098","url":null,"abstract":"<div>Development of decidedly sensitive and selective gas sensors is desirable to maintain control of environment quality against hazardous pollutant. The adsorption of H2S and SO2 molecules on pristine and Zn doped MoSe2 structures is examined by first principles computations - density functional theory (DFT). The work involves analysis of adsorption energy and distance, charge transferred between a structure and a gas molecule, band structure, and density of states (DOS). The band structure of MoSe2 reveals substantial variations of its electronic properties upon doping with Zn. Furthermore, new bands have been developed near the Fermi level within the DOS due to Zn doping of MoSe2 structure. The adsorption of both H2S and SO2 gases on Zn–MoSe2 structure is greatly enhanced, as compared with the pristine structure. The Zn-modified MoSe2 structure exhibits larger adsorption energy for H2S gas, hence, better sensitivity is comparison with SO2 gas. This work illustrates that Zn doping of MoSe2 structure may be considered for sensitive detection of H2S gas.</div>","PeriodicalId":22044,"journal":{"name":"Superlattices and Microstructures","volume":null,"pages":null},"PeriodicalIF":3.1,"publicationDate":"2022-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S0749603621002998/pdfft?md5=44ece1a3ca3504b9fbdd63f46e38f9c3&pid=1-s2.0-S0749603621002998-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"47159518","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 14

Chemical unit co-substitution enabling broadband and tunable near-infrared emission in garnet-type Lu3Sc2Ga3O12:Cr3+ phosphors 化学单元共取代使石榴石型Lu3Sc2Ga3O12:Cr3+荧光粉实现宽带和可调谐近红外发射

IF 3.1 3区物理与天体物理

Superlattices and Microstructures Pub Date : 2022-01-01 DOI: 10.20517/microstructures.2022.19

Tao Wang, Gaochao liu, Z. Xia

引用次数: 4

Nanostructural design of superstrong metallic materials by severe plastic deformation processing 强塑性变形处理的超强金属材料纳米结构设计

IF 3.1 3区物理与天体物理

Superlattices and Microstructures Pub Date : 2022-01-01 DOI: 10.20517/microstructures.2022.25

R. Valiev

引用次数: 2

Detwinning/twin growth-induced phase transformation in a metastable compositionally complex alloy 亚稳复合合金的去孪晶/孪晶生长诱导相变

IF 3.1 3区物理与天体物理

Superlattices and Microstructures Pub Date : 2022-01-01 DOI: 10.20517/microstructures.2022.14

Wenjun Lu, F. An, C. Liebscher

引用次数: 1

Study of thermochromic and photocatalytic properties of MoO3 thin films MoO3薄膜的热致变色和光催化性能研究

IF 3.1 3区物理与天体物理

Superlattices and Microstructures Pub Date : 2022-01-01 DOI: 10.1016/j.spmi.2021.107096

V.R. Sreelakshmi , A. Anu Kaliani , M. Jithin

引用次数: 4