Compact analytical modeling of underlap gate stack graded channel junction accumulation mode junctionless FET in subthreshold regime

IF 3.3 3区物理与天体物理 Q2 PHYSICS, CONDENSED MATTER

Superlattices and Microstructures Pub Date : 2022-02-01 DOI:10.1016/j.spmi.2021.107110

Ankush Chattopadhyay , Chandan K. Sarkar , Chayanika Bose

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引用次数: 2

Abstract

This paper presents the compact analytical model of underlap gate stack (GS) graded channel (GC) junction accumulation mode (JAM) junctionless (JL) FET. At first, a comparative analysis between the two different graded channel schemes and non-graded channel is performed based on I_ON, I_OFF and I_ON/I_OFF ratio. The scheme that yields the higher I_ON/I_OFF ratio along with smaller I_OFF, is adopted in the proposed JL FET for further analysis. The 2D analytical modeling of the GS-GC-JAM-JL FET deals with the determination of surface potential, threshold voltage, subthreshold drain current, DIBL and subthreshold swing. Results obtained from analytical model and simulations are compared and an excellent match is found. Thus the present paper establishes the outstanding ability of proposed underlap GS-GC-JAM-JL FET architecture to shield the short channel effects without sacrificing its performance, and therefore, proves it as a potential candidate for ultra-low power applications.

查看原文本刊更多论文

亚阈值区下叠层栅-叠层渐变沟道结累积模式无结FET的紧凑分析建模

本文提出了下搭栅堆(GS)梯度通道(GC)结积累模式(JAM)无结场效应管(JL)的紧凑解析模型。首先，基于离子、IOFF和离子/IOFF比对两种不同的梯度通道方案和非梯度通道方案进行了比较分析。为了进一步分析，我们在JL FET中采用了更高离子/IOFF比和更小IOFF的方案。GS-GC-JAM-JL场效应管的二维解析建模处理了表面电位、阈值电压、亚阈值漏极电流、DIBL和亚阈值摆幅的确定。分析模型与仿真结果进行了比较，结果吻合良好。因此，本论文建立了所提出的覆盖GS-GC-JAM-JL FET架构在不牺牲其性能的情况下屏蔽短通道效应的卓越能力，因此，证明了它是超低功耗应用的潜在候选者。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Superlattices and Microstructures 物理-物理：凝聚态物理

CiteScore

6.10

自引率

3.20%

发文量

审稿时长

2.8 months

期刊介绍： Micro and Nanostructures is a journal disseminating the science and technology of micro-structures and nano-structures in materials and their devices, including individual and collective use of semiconductors, metals and insulators for the exploitation of their unique properties. The journal hosts papers dealing with fundamental and applied experimental research as well as theoretical studies. Fields of interest, including emerging ones, cover: • Novel micro and nanostructures • Nanomaterials (nanowires, nanodots, 2D materials ) and devices • Synthetic heterostructures • Plasmonics • Micro and nano-defects in materials (semiconductor, metal and insulators) • Surfaces and interfaces of thin films In addition to Research Papers, the journal aims at publishing Topical Reviews providing insights into rapidly evolving or more mature fields. Written by leading researchers in their respective fields, those articles are commissioned by the Editorial Board. Formerly known as Superlattices and Microstructures, with a 2021 IF of 3.22 and 2021 CiteScore of 5.4