Enhancement in optoelectronic properties of lanthanum co-doped CdO: Zn thin films for TCO applications

IF 3.3 3区物理与天体物理 Q2 PHYSICS, CONDENSED MATTER

Superlattices and Microstructures Pub Date : 2022-02-01 DOI:10.1016/j.spmi.2021.107097

R. Sarath babu , Y. Narasimha murthy , S. Vinoth , R.S. Rimal Isaac , P. Mohanraj , V. Ganesh , H. Algarni , S. AlFaify

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引用次数: 7

Abstract

This work reports on structural, electrical, optical, and photosensing properties of La and Zn co-doped CdO thin films. The co-doped CdO thin films were prepared on glass substrates using the nebulizer spray method at 350 °C. From the structural analysis, a decrease in the crystallite size from 20 to 16 nm is observed against the incorporation of La in CdO:Zn. Inclusion of La in CdO:Zn has also changed the surface morphology with a reduction in the roughness of the thin film samples. EDX analysis confirmed the incorporation of La with CdO: Zn in the prepared films. The bandgap value of the prepared samples increased with the increase in La concentration. A 1.5 wt% of La co-doped with CdO:Zn thin film sample produces low resistivity of 6.81 × 10^-4 Ωcm and a better figure of merit of 8.4 × 10 ⁻⁴ Ω^-1. Finally, the fabricated photodetector with 1.5 wt% of La co-doped with CdO:Zn thin film shows a higher photocurrent and an ideality factor value of 3.4. The photosensing properties of the fabricated (p-Si/CdO–Zn–La (1.5%)) photodetector shows a higher responsivity (R) value of 1.18 AW^-1, specific detectivity (D*) value of 4.90 × 10⁹ Jones, and external quantum efficiency (EQE) value of 274% with 3.0 mW/cm² light intensity. The switching characteristics of the photodetector show a faster rise time (2.9s) and fall time (3.6s) suggesting the fabricated device suitable for photosensing applications.

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用于TCO的镧共掺杂CdO: Zn薄膜光电性能的增强

本文报道了La和Zn共掺杂CdO薄膜的结构、电学、光学和光敏性能。在350℃的温度下，采用喷雾器喷雾法制备了共掺杂的CdO薄膜。从结构分析来看，La的掺入使CdO:Zn的晶粒尺寸从20 nm减小到16 nm。La在CdO:Zn中的包合也改变了表面形貌，降低了薄膜样品的粗糙度。EDX分析证实了所制备薄膜中La与CdO: Zn的结合。制备样品的带隙值随La浓度的增加而增大。当La与CdO:Zn共掺杂量为1.5 wt%时，薄膜样品的电阻率较低，为6.81 × 10-4 Ωcm，优良系数为8.4 × 10-4 Ω-1。结果表明，当La与CdO:Zn共掺杂量为1.5 wt%时，所制备的光电探测器具有较高的光电流，理想因子值为3.4。制备的p-Si/ CdO-Zn-La(1.5%)光电探测器在3.0 mW/cm2光强下的响应率R为1.18 AW-1，比探测率D*为4.90 × 109 Jones，外量子效率EQE为274%。光电探测器的开关特性显示出更快的上升时间(2.9s)和下降时间(3.6s)，表明该器件适合光敏应用。

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来源期刊

Superlattices and Microstructures 物理-物理：凝聚态物理

CiteScore

6.10

自引率

3.20%

发文量

审稿时长

2.8 months

期刊介绍： Micro and Nanostructures is a journal disseminating the science and technology of micro-structures and nano-structures in materials and their devices, including individual and collective use of semiconductors, metals and insulators for the exploitation of their unique properties. The journal hosts papers dealing with fundamental and applied experimental research as well as theoretical studies. Fields of interest, including emerging ones, cover: • Novel micro and nanostructures • Nanomaterials (nanowires, nanodots, 2D materials ) and devices • Synthetic heterostructures • Plasmonics • Micro and nano-defects in materials (semiconductor, metal and insulators) • Surfaces and interfaces of thin films In addition to Research Papers, the journal aims at publishing Topical Reviews providing insights into rapidly evolving or more mature fields. Written by leading researchers in their respective fields, those articles are commissioned by the Editorial Board. Formerly known as Superlattices and Microstructures, with a 2021 IF of 3.22 and 2021 CiteScore of 5.4