Science and Technology of Advanced Materials最新文献

Catalyst poisoning influences from various functional groups of energy carriers towards electrochemical oxidation reactions on non-noble high-entropy alloy anodes in acidic media. 催化剂中毒对酸性介质中非高贵高熵合金阳极电化学氧化反应的影响

IF 6.9 3区材料科学

Science and Technology of Advanced Materials Pub Date : 2026-04-24 eCollection Date: 2026-01-01 DOI: 10.1080/14686996.2026.2653417

Rafat Tahawy, Salma Aridha Muflihah, Kosuke Hara, Tatsuhiko Ohto, Hisanori Tanimoto, Tianshu Li, Mahmoud Abdelnabi, Samuel Jeong, Tomohiko Nishiuchi, Hajime Kimizuka, Akfiny Hasdi Aimon, Yoshikazu Ito

{"title":"Catalyst poisoning influences from various functional groups of energy carriers towards electrochemical oxidation reactions on non-noble high-entropy alloy anodes in acidic media.","authors":"Rafat Tahawy, Salma Aridha Muflihah, Kosuke Hara, Tatsuhiko Ohto, Hisanori Tanimoto, Tianshu Li, Mahmoud Abdelnabi, Samuel Jeong, Tomohiko Nishiuchi, Hajime Kimizuka, Akfiny Hasdi Aimon, Yoshikazu Ito","doi":"10.1080/14686996.2026.2653417","DOIUrl":"https://doi.org/10.1080/14686996.2026.2653417","url":null,"abstract":"Electrolytic synthesis of energy carriers using renewable energy and fuel cells that use energy carriers for regeneration are important technologies for achieving our carbon-neutral society. However, electrochemical reactions in electrolyte containing organic molecules significantly degrade the electrodes by catalyst poisoning (i.e. polymerization of organic molecules on the electrode surface). Such a situation can easily occur through the crossover phenomenon between the anode and cathode chambers. Thus, the understanding of the electrochemical reactivity of organic molecules on electrodes becomes important for utilizing energy carriers. This study investigated the electrochemical reactivity of various organic molecules with typical functional groups to understand the reaction mechanism and the subsequent catalyst poisoning in acidic media. While -OH groups on organic molecules do not cause significant degradations on a non-noble metal high-entropy alloy anode, the coexistence of -NH2 and C=O groups on organic molecules significantly degrades the anode because the generated polymers block the catalytically active sites. This knowledge will contribute to the effective design of catalysts/electrodes and benefit the communities in electrolytic synthesis and fuel cells.","PeriodicalId":21588,"journal":{"name":"Science and Technology of Advanced Materials","volume":"27 1","pages":"2653417"},"PeriodicalIF":6.9,"publicationDate":"2026-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC13148096/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147842283","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Structural color due to guided-mode resonance in silicon-on-insulator irradiated by nanosecond laser pulses. 纳秒激光脉冲辐照下绝缘体上硅导模共振引起的结构颜色。

IF 6.9 3区材料科学

Science and Technology of Advanced Materials Pub Date : 2026-03-20 eCollection Date: 2026-01-01 DOI: 10.1080/14686996.2026.2641872

Vygantas Mizeikis, Cristhian Cobas Montero, Anzelms Zukuls, Kaspars Ozols, Patrik Ščajev, Yoshishige Tsuchiya, Darius Gailevičius, Daniel Moraru, Pavels Onufrijevs

{"title":"Structural color due to guided-mode resonance in silicon-on-insulator irradiated by nanosecond laser pulses.","authors":"Vygantas Mizeikis, Cristhian Cobas Montero, Anzelms Zukuls, Kaspars Ozols, Patrik Ščajev, Yoshishige Tsuchiya, Darius Gailevičius, Daniel Moraru, Pavels Onufrijevs","doi":"10.1080/14686996.2026.2641872","DOIUrl":"https://doi.org/10.1080/14686996.2026.2641872","url":null,"abstract":"We demonstrate structural color generation in silicon-on-insulator wafers using nanosecond laser irradiation. Laser-induced periodic surface structures on the thin Si film act as grating couplers, enabling optical resonances that produce bright, spectrally selective structural colors at visible wavelengths. The mechanism combines grating-mediated waveguide coupling with Fabry-Perot spectral filtering, yielding optical characteristics resembling guided-mode resonance. The central wavelength is tunable across the visible spectrum by varying Si film thickness (50-70 nm range), with measured samples exhibiting green coloration at 55 nm and red at 70 nm thickness. Numerical simulations qualitatively reproduce the observed optical properties. This non-chemical, non-fading coloration offers potential applications in secure marking and process control for semiconductor manufacturing.","PeriodicalId":21588,"journal":{"name":"Science and Technology of Advanced Materials","volume":"27 1","pages":"2641872"},"PeriodicalIF":6.9,"publicationDate":"2026-03-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC13040576/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147609881","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Thermoelectric, magnetotransport, and ultrafast dynamics of bismuth telluride thin films grown using pulsed laser deposition: effects of substrate temperature and post-annealing. 使用脉冲激光沉积生长的碲化铋薄膜的热电、磁输运和超快动力学：衬底温度和后退火的影响。

IF 6.9 3区材料科学

Science and Technology of Advanced Materials Pub Date : 2026-03-19 eCollection Date: 2026-01-01 DOI: 10.1080/14686996.2026.2639789

Le Thi Cam Tuyen, Bih-Show Lou, Jyh-Wei Lee, Ngo Ngoc Uyen, Phuoc Huu Le, Chien-Neng Liao, Chih-Wei Luo, Jiunn-Yuan Lin

{"title":"Thermoelectric, magnetotransport, and ultrafast dynamics of bismuth telluride thin films grown using pulsed laser deposition: effects of substrate temperature and post-annealing.","authors":"Le Thi Cam Tuyen, Bih-Show Lou, Jyh-Wei Lee, Ngo Ngoc Uyen, Phuoc Huu Le, Chien-Neng Liao, Chih-Wei Luo, Jiunn-Yuan Lin","doi":"10.1080/14686996.2026.2639789","DOIUrl":"10.1080/14686996.2026.2639789","url":null,"abstract":"n-Type Bi2Te3 and Bi4Te5 thin films were grown on SiO2/Si substrates via pulsed laser deposition (PLD) at substrate temperatures (T S ) ranging from 25°C to 350°C under 220 mTorr He. Film morphology evolved from nanoparticles to layered hexagonal platelets with increasing T S , accompanied by a shift in preferred orientation from (015) to highly (00 l)-oriented textures. Composition varied from Te-rich at low T S to Te-deficient at 350°C. Near-stoichiometric and (00 l)-textured Bi2Te3 thin films deposited at 250-300°C exhibited reduced carrier concentration (~9.5 × 1019 cm-3), significantly enhanced mobility (up to 81.2 cm2/V·s), and a maximum thermoelectric (TE) power factor (PF) of 20.0 µW·cm-1·K-2. To further enhance the TE performance, Bi2Te3 films grown at 200, 250, and 300°C were in-situ annealed in helium gas at 220 mTorr for 60 min at annealing temperatures (T A ) of 200, 250, 300, and 350°C. Simultaneous tuning of T S and T A revealed a processing window for optimized PFs, achieving a peak value of 23.8 µW·cm-1·K-2 for the film grown at 250°C and annealed at 250°C- a 19% improvement over the as-deposited counterpart. Additionally, low-temperature transport measurements exhibited two-dimensional weak antilocalization behavior in the optimized TE Bi2Te3 thin film, suggesting the presence of topological surface states. Ultrafast spectroscopy further revealed coherent optical and acoustic phonon modes at 1.87 THz and 37.3 GHz, respectively.","PeriodicalId":21588,"journal":{"name":"Science and Technology of Advanced Materials","volume":"27 1","pages":"2639789"},"PeriodicalIF":6.9,"publicationDate":"2026-03-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC13011105/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147514469","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Structural heterogeneity-induced enhancement of transverse magneto-thermoelectric conversion revealed by thermoelectric imaging in functionally graded materials. 功能梯度材料中结构异质诱导的横向磁热电转换增强。

IF 6.9 3区材料科学

Science and Technology of Advanced Materials Pub Date : 2026-03-12 eCollection Date: 2026-01-01 DOI: 10.1080/14686996.2026.2643965

Sang J Park, Ravi Gautam, Takashi Yagi, Rajkumar Modak, Hossein Sepehri-Amin, Ken-Ichi Uchida

{"title":"Structural heterogeneity-induced enhancement of transverse magneto-thermoelectric conversion revealed by thermoelectric imaging in functionally graded materials.","authors":"Sang J Park, Ravi Gautam, Takashi Yagi, Rajkumar Modak, Hossein Sepehri-Amin, Ken-Ichi Uchida","doi":"10.1080/14686996.2026.2643965","DOIUrl":"https://doi.org/10.1080/14686996.2026.2643965","url":null,"abstract":"Functionally graded materials (FGMs) exhibit continuous property variations that enable unique functionalities and provide efficient platforms for systematic property optimization. Here, we report the fabrication of FGMs with graded structural heterogeneity by annealing an amorphous metal under a one-dimensional temperature gradient. Using lock-in thermography (LIT), we spatially mapped transverse thermoelectric conversion with high spatial and temperature resolution. A pronounced non-monotonic response was observed, with the maximum anomalous Ettingshausen effect, a transverse charge-to-heat conversion in magnetic materials, appearing in the atomic-heterogeneity regime well before crystallization. This enhancement was not captured by conventional structural or longitudinal transport measurements, highlighting the exceptional sensitivity of transverse thermoelectric phenomena to subtle structural variations. Structural analyses using scanning transmission electron microscopy and atom probe tomography revealed Fe-based crystalline alloys and Cu nanoclusters embedded in the amorphous matrix, whose heterogeneity accounts for the enhanced response. These findings establish temperature-gradient-annealed FGMs, combined with LIT, as a powerful methodology for probing structural-heterogeneity-driven transverse electron transport and for designing high-performance flexible materials.","PeriodicalId":21588,"journal":{"name":"Science and Technology of Advanced Materials","volume":"27 1","pages":"2643965"},"PeriodicalIF":6.9,"publicationDate":"2026-03-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC13040573/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147609872","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Towards the practical realization of high-performance Ag₂Se-based thermoelectric coolers. 迈向高性能ag2se基热电冷却器的实际实现。

IF 6.9 3区材料科学

Science and Technology of Advanced Materials Pub Date : 2026-03-12 eCollection Date: 2026-01-01 DOI: 10.1080/14686996.2026.2641882

Feng Jiang, Zhengtao Wang, Wen Zhong, Yifan Zhou, Zhengyang Zhou, Longzhi Wu, Jiang Chen, Yao Xu, Xiaodong Wang, Feng Cao, Qian Zhang, Jun Mao

{"title":"Towards the practical realization of high-performance Ag2Se-based thermoelectric coolers.","authors":"Feng Jiang, Zhengtao Wang, Wen Zhong, Yifan Zhou, Zhengyang Zhou, Longzhi Wu, Jiang Chen, Yao Xu, Xiaodong Wang, Feng Cao, Qian Zhang, Jun Mao","doi":"10.1080/14686996.2026.2641882","DOIUrl":"10.1080/14686996.2026.2641882","url":null,"abstract":"Ag2Se-based materials with promising room-temperature thermoelectric performance and excellent mechanical properties have been known for decades. However, the fabrication of the Ag2Se-based devices toward the practical application of electronic cooling has seldom been reported. Herein, the synthesis of Ag2Se material with a diameter of 25.4 mm was achieved. The homogeneous elemental distribution and similar thermoelectric properties demonstrate the high uniformity of the Ag2Se sample. In addition, ~90 Ag/Ag2Se/Ag legs can be obtained from a single Ag2Se plate, and the interfacial contact resistivity of the Ag/Ag2Se varies from 0.8 to 3.1 μΩ cm2. Four thermoelectric devices based on n-type Ag2Se and p-type (Bi, Sb)2Te3 have been fabricated, and they achieve a cooling temperature difference of ~56 K at the hot-side temperature of 300 K, demonstrating the great potential of Ag2Se material for cooling applications.","PeriodicalId":21588,"journal":{"name":"Science and Technology of Advanced Materials","volume":"27 1","pages":"2641882"},"PeriodicalIF":6.9,"publicationDate":"2026-03-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC13023009/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147575264","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Sputtering yield for metal halide perovskite devices patterning. 金属卤化物钙钛矿器件图案化的溅射收率。

IF 6.9 3区材料科学

Science and Technology of Advanced Materials Pub Date : 2026-03-02 eCollection Date: 2026-01-01 DOI: 10.1080/14686996.2026.2637353

Erfu Wu, Sergey Tsarev, Xuqi Liu, Daria Proniakova, Sergii Yakunin, Maksym V Kovalenko, Ivan Shorubalko

{"title":"Sputtering yield for metal halide perovskite devices patterning.","authors":"Erfu Wu, Sergey Tsarev, Xuqi Liu, Daria Proniakova, Sergii Yakunin, Maksym V Kovalenko, Ivan Shorubalko","doi":"10.1080/14686996.2026.2637353","DOIUrl":"https://doi.org/10.1080/14686996.2026.2637353","url":null,"abstract":"Metal halide perovskites (MHPs) are emerging semiconductors with unique optoelectronic properties promising for highly rewardable applications. Water and polar solvents instability hinders the introduction of MHPs into CMOS technology infrastructure and is the main challenge for patterning and integration into electronic systems. Recently, dry etching in combination with standard lithography was demonstrated as a viable technology to address the problem. In this work, we investigate the dry etching of MHPs using argon (Ar) ion milling. Simulated etch rates using Ziegler's model are validated with experimental measurements. Assuming a linear sum of elemental sputtering yields results in total sputtering yield values for complex MHPs (CsPbIBr2, CsPbBr2Cl) that agree well with experimental data. Interestingly, ignoring the organic part of the hybrid halide perovskite MAPbI2Br gives a valid estimation of the sputtering yield. At a typical processing ion energy of 700 eV, Ar milling achieves rates of approximately 1-2 nm/s across various perovskite compositions. Photodetectors (PDs) fabricated under optimized etching conditions retain typical photoresponse, demonstrating the device functionality can be preserved after etching.","PeriodicalId":21588,"journal":{"name":"Science and Technology of Advanced Materials","volume":"27 1","pages":"2637353"},"PeriodicalIF":6.9,"publicationDate":"2026-03-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC12997472/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147487311","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Formation of configurable uniform CdSeTe thin films by close-space sublimation deposition of multiple alternating CdSe and CdTe layers. 多层CdSe和CdTe交替的近空间升华沉积形成可配置的均匀CdSeTe薄膜。

IF 6.9 3区材料科学

Science and Technology of Advanced Materials Pub Date : 2026-02-26 eCollection Date: 2026-01-01 DOI: 10.1080/14686996.2026.2633815

Pascal Jundt, Olaf Zywitzki, Thomas Modes, Sagar Baitule, Robert Arndt, Bettina Späth, Bastian Siepchen

{"title":"Formation of configurable uniform CdSeTe thin films by close-space sublimation deposition of multiple alternating CdSe and CdTe layers.","authors":"Pascal Jundt, Olaf Zywitzki, Thomas Modes, Sagar Baitule, Robert Arndt, Bettina Späth, Bastian Siepchen","doi":"10.1080/14686996.2026.2633815","DOIUrl":"https://doi.org/10.1080/14686996.2026.2633815","url":null,"abstract":"Incorporation of selenium within cadmium telluride to form the CdSexTe1-x alloy has enabled higher device efficiencies in photovoltaic applications through improved passivation and current collection. Recent investigations of this alloy have simultaneously indicated significant potential for further performance gains as well as potentially serious detrimental characteristics. Exploring how best to utilize this important material requires consistent, configurable film deposition. Absorber layers are often deposited by close-space sublimation, which can produce high-quality films at large scale. It has previously been demonstrated that close-space sublimation of CdSeTe material directly is inconvenient and inflexible; therefore, an alternative method with greater consistency and control over film composition is sought. In this work, CdSeTe films were formed by close-space sublimation of alternating CdSe and CdTe layers followed by a high-temperature annealing in the presence of CdCl2. Under the optimal deposition conditions, this technique was shown to produce high-quality films of CdSeTe with homogeneous elemental distribution, uniform grain size, and low roughness. However, this method also exhibited a significant tendency to form numerous voids which largely persist after CdCl2 annealing. The source of this porosity was investigated and determined to primarily be resublimation of CdTe during the higher-temperature deposition of the CdSe layers. The process window to prevent voiding was observed to be rather small; while this would be a significant detriment in a production setting, it is less important in the targeted application for this approach, which is fundamental material and device investigations.","PeriodicalId":21588,"journal":{"name":"Science and Technology of Advanced Materials","volume":"27 1","pages":"2633815"},"PeriodicalIF":6.9,"publicationDate":"2026-02-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC12943812/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147326994","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Understanding strain localization in metallic materials: a review of high-resolution digital image correlation and related techniques. 理解金属材料中的应变局部化：高分辨率数字图像相关及相关技术综述。

IF 6.9 3区材料科学

Science and Technology of Advanced Materials Pub Date : 2026-02-17 eCollection Date: 2026-01-01 DOI: 10.1080/14686996.2026.2630488

F Briffod, T E J Edwards, J Quinta da Fonseca, J-C Stinville, D Texier, T Vermeij

{"title":"Understanding strain localization in metallic materials: a review of high-resolution digital image correlation and related techniques.","authors":"F Briffod, T E J Edwards, J Quinta da Fonseca, J-C Stinville, D Texier, T Vermeij","doi":"10.1080/14686996.2026.2630488","DOIUrl":"10.1080/14686996.2026.2630488","url":null,"abstract":"Plastic deformation in metallic materials is generally governed by highly localized and intrinsically heterogeneous deformation processes, including crystallographic slip banding, deformation twinning, phase transformation and grain-boundary sliding. These mechanisms operate at the sub-grain scale where they are competing, interacting, and are sometimes incompatible for short-range transmission due to deformation confinement within individual grains. The heterogeneous nature of irreversible deformation at the microstructure scale also applies at the mesoscale, i.e. the scale of the crystalline aggregate. Capturing experimentally the discrete and heterogeneous deformation processes at the microstructure scale is essential to understand elementary deformation processes involved for specific loading conditions, quantifying their intensity to finally achieve a better dialogue with numerical models of crystal plasticity for the prediction of mechanical behavior and the lifetime of parts. High-resolution digital image correlation (HR-DIC), implemented on scanning electron microscopy images, has emerged as a key technique to quantify these phenomena by providing full-field measurements of in-plane displacement and strain at sub-micron spatial resolution over statistically representative fields of view. This review outlines the experimental foundations, data-processing strategies, and correlative analysis frameworks that underpin the use of HR-DIC for studying strain localization in metals.","PeriodicalId":21588,"journal":{"name":"Science and Technology of Advanced Materials","volume":"27 1","pages":"2630488"},"PeriodicalIF":6.9,"publicationDate":"2026-02-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC12981271/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147463725","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Effect of dislocation slip on in-situ tensile fracture of vanadium alloys after helium/self-ion irradiation. 位错滑移对氦/自离子辐照后钒合金原位拉伸断裂的影响

IF 6.9 3区材料科学

Science and Technology of Advanced Materials Pub Date : 2026-02-11 eCollection Date: 2026-01-01 DOI: 10.1080/14686996.2026.2627678

Qianqian Zhang, Shaoning Jiang, Yanfen Li, Shoushuai Zhang, Pengfei Zheng, Jianghai Lin, Guangchun Xiao

{"title":"Effect of dislocation slip on in-situ tensile fracture of vanadium alloys after helium/self-ion irradiation.","authors":"Qianqian Zhang, Shaoning Jiang, Yanfen Li, Shoushuai Zhang, Pengfei Zheng, Jianghai Lin, Guangchun Xiao","doi":"10.1080/14686996.2026.2627678","DOIUrl":"https://doi.org/10.1080/14686996.2026.2627678","url":null,"abstract":"Research on tensile fracture of vanadium alloys after irradiation would help evaluate their mechanical properties and service life in extreme environments of fusion reactors, thereby ensuring the safety and reliability of the materials. This study investigated the effect of dislocation slip on the fracture of irradiated V-4Cr-4Ti through in-situ tensile testing under transmission electron microscopy (TEM). The results showed that He+ and V+ ions irradiation of V-4Cr-4Ti generated dislocations loops and helium bubbles. During subsequent in-situ tensile deformation, dislocation slip was the primary deformation mode under tensile load, while helium bubbles, due to size constraints, exhibited no significant deformation. During the loading process, multiple slip systems were activated. Based on the Critical resolved shear stress (CRSS) analysis, the slip primarily occurred along the (1 -1 0) plane, while fracture mainly occurred along the (-1 -1 2) plane. The necking phenomenon after fracture was not apparent, indicating that the irradiated sample had a very high yield stress. Additionally, when the sample was close to fracture, dislocations in regions with fewer defects experienced less resistance and thus slid over greater distances.","PeriodicalId":21588,"journal":{"name":"Science and Technology of Advanced Materials","volume":"27 1","pages":"2627678"},"PeriodicalIF":6.9,"publicationDate":"2026-02-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC12943815/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147327005","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Electron doping of exfoliated multilayer graphene induced by dissociative H₂ adsorption due to long-term exposure to 80-bar H₂ gas. 长期暴露于80 bar H2气体中，解离H2吸附诱导脱落多层石墨烯的电子掺杂。

IF 6.9 3区材料科学

Science and Technology of Advanced Materials Pub Date : 2026-02-05 eCollection Date: 2026-01-01 DOI: 10.1080/14686996.2026.2627029

Hyun-Seok Jang, Younghun Kim, Heewoo Lee, Soo Bong Choi, Jeongwoo Kim, Byung Hoon Kim

{"title":"Electron doping of exfoliated multilayer graphene induced by dissociative H2 adsorption due to long-term exposure to 80-bar H2 gas.","authors":"Hyun-Seok Jang, Younghun Kim, Heewoo Lee, Soo Bong Choi, Jeongwoo Kim, Byung Hoon Kim","doi":"10.1080/14686996.2026.2627029","DOIUrl":"https://doi.org/10.1080/14686996.2026.2627029","url":null,"abstract":"Semiconducting graphene is expected to replace silicon in the electronics industry, and various methods have been proposed for this purpose. In this study, we demonstrate that the long-term exposure of multilayer graphene to 80 bar of molecular hydrogen induces electron doping in graphene. Ambipolarity behavior disappeared, and the current in the transfer curves decreased and increased in the negative gate voltage (V g ) and positive V g regions, respectively. The charge neutrality point shifted from 4.18 to over -80 V. Two resonant scatterings due to hydrogen adatoms were observed in the temperature-dependent transfer curves. For multilayer graphene with a boundary (edge), different behavior was observed in the transfer characteristics. Upon exposure to 80 bar of H2 pressure, the drain current of the time-dependent transfer curve rapidly decreased; however, it increased in the positive V g region after 60 h of exposure to H2. Structural changes, particularly an increase in C‒H bonding, were observed using various characterization methods. These results were interpreted by the dissociative H2 adsorption of graphene. Molecular dynamics simulations also revealed the presence of electron doping due to dissociative adsorption. Furthermore, the simulations confirmed that dissociative adsorption occurred on the surface layer and at vacancies and defects.","PeriodicalId":21588,"journal":{"name":"Science and Technology of Advanced Materials","volume":"27 1","pages":"2627029"},"PeriodicalIF":6.9,"publicationDate":"2026-02-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC12943807/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147327024","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0