Laser ablation process of CsPbBr₃ heterostructures for light-emitting diode applications.

IF 6.9 3区材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY

Science and Technology of Advanced Materials Pub Date : 2025-09-09 eCollection Date: 2025-01-01 DOI:10.1080/14686996.2025.2554045

Ryunosuke Kumagai, Ren Koguchi, Takuro Dazai, Toshihiro Sato, Hideomi Koinuma, Ryuzi Katoh, Ryota Takahashi

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引用次数: 0

Abstract

We investigated a vacuum thin-film process using laser ablation to fabricate heterostructures of halide perovskite CsPbBr₃ for light-emitting diode (LED) applications. A CsPbBr₃ single crystal synthesized via inverse temperature crystallization was used as the target material for pulsed laser deposition. CsPbBr₃ films were deposited at 150°C, 200°C and 250°C. Structural and optical analysis has revealed that the optimum temperature is 200°C, which display the highest crystallinity and photoluminescence emission efficiency. Time-resolved microwave photoconductivity characterization revealed that the CsPbBr₃ film exhibited a high effective mobility of 2.47 cm²/Vs and long photocarrier lifetime of 16.5 μs. The lifetime is comparable to that of bulk CsPbBr₃ single crystals. This indicates that the polycrystalline CsPbBr₃ film had a low density of defect structures that promote nonradiative recombination. Furthermore, we applied this process to fabricate a LED device using halide perovskite heterostructures. This resulted in a strong green electroluminescence emission. The laser ablation process using ultraviolet and infrared light is suitable for forming heterostructures with an electron transportation layer of oxide Mg_0.3Zn_0.7O film and a hole transportation layer of an organic α-NPD film. The film synthesis process is likely to be effective for evaluating heterointerfaces of various materials displaying remarkable crystallinity without exposure to air.

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激光烧蚀CsPbBr3异质结构在发光二极管中的应用。

我们研究了一种利用激光烧蚀制备用于发光二极管（LED）的卤化物钙钛矿CsPbBr3异质结构的真空薄膜工艺。采用反温结晶法合成了CsPbBr3单晶，作为脉冲激光沉积的靶材料。CsPbBr3薄膜分别在150°C、200°C和250°C下沉积。结构和光学分析表明，最适温度为200℃，结晶度和发光效率最高。时间分辨微波光导特性表明，CsPbBr3薄膜具有2.47 cm2/Vs的有效迁移率和16.5 μs的长载流子寿命。寿命可与本体CsPbBr3单晶相媲美。这表明多晶CsPbBr3薄膜具有低密度的缺陷结构，促进了非辐射复合。此外，我们将该工艺应用于使用卤化物钙钛矿异质结构制造LED器件。这就产生了强烈的绿色电致发光。紫外和红外光激光烧蚀工艺适合于形成氧化Mg0.3Zn0.7O薄膜的电子输运层和有机α-NPD薄膜的空穴输运层的异质结构。薄膜合成过程可能是有效的评价各种材料的异质界面显示显着的结晶度，而不暴露于空气。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Science and Technology of Advanced Materials 工程技术-材料科学：综合

CiteScore

10.60

自引率

3.60%

发文量

审稿时长

4.8 months

期刊介绍： Science and Technology of Advanced Materials (STAM) is a leading open access, international journal for outstanding research articles across all aspects of materials science. Our audience is the international community across the disciplines of materials science, physics, chemistry, biology as well as engineering. The journal covers a broad spectrum of topics including functional and structural materials, synthesis and processing, theoretical analyses, characterization and properties of materials. Emphasis is placed on the interdisciplinary nature of materials science and issues at the forefront of the field, such as energy and environmental issues, as well as medical and bioengineering applications. Of particular interest are research papers on the following topics: Materials informatics and materials genomics Materials for 3D printing and additive manufacturing Nanostructured/nanoscale materials and nanodevices Bio-inspired, biomedical, and biological materials; nanomedicine, and novel technologies for clinical and medical applications Materials for energy and environment, next-generation photovoltaics, and green technologies Advanced structural materials, materials for extreme conditions.