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A twenty percent efficient photovoltaic concentrator module 一个20%效率的光伏聚光器组件
IEEE Conference on Photovoltaic Specialists Pub Date : 1990-05-21 DOI: 10.1109/PVSC.1990.111743
C. Chiang, E. H. Richards
{"title":"A twenty percent efficient photovoltaic concentrator module","authors":"C. Chiang, E. H. Richards","doi":"10.1109/PVSC.1990.111743","DOIUrl":"https://doi.org/10.1109/PVSC.1990.111743","url":null,"abstract":"A solar-to-electric efficiency greater than 200% has been achieved using a silicon-based photovoltaic concentrator module. The module uses 12 point-focus cells and has a total lens aperture area of 1875 cm/sup 2/. Results of outdoor testing of the full module are given. The cells and cell mounts of the module were designed for the commercial-prototype Sandia Baseline Module 3, and it is expected that concentrator modules with efficiencies of 20% will be available commercially within a few years.<<ETX>>","PeriodicalId":211778,"journal":{"name":"IEEE Conference on Photovoltaic Specialists","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128741080","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 21
CuInSe/sub 2/ thin films and high-efficiency solar cells obtained by selenization of metallic layers 金属层硒化制备的CuInSe/sub 2/薄膜和高效太阳能电池
IEEE Conference on Photovoltaic Specialists Pub Date : 1990-05-21 DOI: 10.1109/PVSC.1990.111681
B. Basol, V. Kapur
{"title":"CuInSe/sub 2/ thin films and high-efficiency solar cells obtained by selenization of metallic layers","authors":"B. Basol, V. Kapur","doi":"10.1109/PVSC.1990.111681","DOIUrl":"https://doi.org/10.1109/PVSC.1990.111681","url":null,"abstract":"Evaporated Cu-In layers have been selenized, and the morphology of the resulting CuInSe/sub 2/, (CIS) films has been compared with that of the electrodeposited selenized CIS layers. The evaporation process causes considerable alloying between the Cu and In films and reduces the grain size of the selenized material. Close to 11% efficiency has been demonstrated for solar cells made on selenized Cu-In alloy films.<<ETX>>","PeriodicalId":211778,"journal":{"name":"IEEE Conference on Photovoltaic Specialists","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129439848","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
Photovoltaic environmental health and safety electronic bulletin board service 光伏环境健康安全电子公告板服务
IEEE Conference on Photovoltaic Specialists Pub Date : 1990-05-21 DOI: 10.1109/PVSC.1990.111771
A. Meinhold, P. Moskowitz
{"title":"Photovoltaic environmental health and safety electronic bulletin board service","authors":"A. Meinhold, P. Moskowitz","doi":"10.1109/PVSC.1990.111771","DOIUrl":"https://doi.org/10.1109/PVSC.1990.111771","url":null,"abstract":"An electronic bulletin board system (BBS) has been established by the Biomedical and Environmental Assessment Group, Brookhaven National Laboratory, for the Photovoltaics Technology Division, US Department of Energy. The purpose of the BBS is to provide a forum for the ongoing exchange of information related to the environmental, health, and safety aspects of photovoltaic cell manufacture. This BBS is available, at no charge, to organization engaged in photovoltaic cell research, development, and production. Individuals with access to a microcomputer, modem, and communications software can call into the BBS and join ongoing discussions. Users of the BBS may also electronically access reports, models, and databases which relate to the environmental, health, and safety aspects of photovoltaic cell manufacture.<<ETX>>","PeriodicalId":211778,"journal":{"name":"IEEE Conference on Photovoltaic Specialists","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130409595","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Buried homojunction solar cells formed in p-InP during sputter deposition and hydrogen plasma processing 在p-InP溅射沉积和氢等离子体处理过程中形成埋藏的同质结太阳能电池
IEEE Conference on Photovoltaic Specialists Pub Date : 1990-05-21 DOI: 10.1109/PVSC.1990.111609
T. Gessert, X. Li, M. Wanlass, T. Coutts
{"title":"Buried homojunction solar cells formed in p-InP during sputter deposition and hydrogen plasma processing","authors":"T. Gessert, X. Li, M. Wanlass, T. Coutts","doi":"10.1109/PVSC.1990.111609","DOIUrl":"https://doi.org/10.1109/PVSC.1990.111609","url":null,"abstract":"Although it is apparent that direct current (DC) magnetron sputter deposition of indium tin oxide (ITO) leads to the formation of a buried homojunction in single-crystal p-type InP, the actual mechanism of type conversion of the InP surface is not clear. Since sputter deposition of In/sub 2/O/sub 3/ has also led to high-quality cells, it appears that Sn is not the cause of type conversion. To investigate the junction formation process further, experiments involving the use of a pure hydrogen plasma have been performed, resulting in type conversion of Fe-doped InP surfaces and in solar cells with efficiencies >16% (global). The results confirm that sputter deposition is not necesssary to form this type of buried homojunction solar cell, and they suggest a fabrication process that may be used with other relevant photovoltaic materials.<<ETX>>","PeriodicalId":211778,"journal":{"name":"IEEE Conference on Photovoltaic Specialists","volume":"17 10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126701796","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Key issues and cost estimates for the fabrication of CuInSe/sub 2 /(CIS) PV modules by the two-stage process 采用两阶段工艺制造CuInSe/ sub2 /(CIS)光伏组件的关键问题和成本估算
IEEE Conference on Photovoltaic Specialists Pub Date : 1990-05-21 DOI: 10.1109/PVSC.1990.111667
V. Kapur, B. Basol
{"title":"Key issues and cost estimates for the fabrication of CuInSe/sub 2 /(CIS) PV modules by the two-stage process","authors":"V. Kapur, B. Basol","doi":"10.1109/PVSC.1990.111667","DOIUrl":"https://doi.org/10.1109/PVSC.1990.111667","url":null,"abstract":"International Solar Electric Technology (ISET) has developed a two-stage process for the deposition of stoichiometric and uniform CIS films. The conversion efficiencies of ISET's CIS-based solar cells are about 11%. The two-stage process is briefly discussed, and the key issues that need to be addressed in order to make this technique suitable for large-scale, low-cost manufacturing of CIS modules are highlighted. Estimates for cost of manufacturing for a plant with a production capacity of 6 MW/yr (on one shift per day basis) shows that CIS modules can be manufactured for >","PeriodicalId":211778,"journal":{"name":"IEEE Conference on Photovoltaic Specialists","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127005158","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 17
Surface recombination velocity and lifetime in InP measured by transient microwave reflectance 瞬态微波反射测量InP表面复合速度和寿命
IEEE Conference on Photovoltaic Specialists Pub Date : 1990-05-21 DOI: 10.1109/PVSC.1990.111656
S. Bothra, S. Tyagi, S. Ghandhi, J. Borrego
{"title":"Surface recombination velocity and lifetime in InP measured by transient microwave reflectance","authors":"S. Bothra, S. Tyagi, S. Ghandhi, J. Borrego","doi":"10.1109/PVSC.1990.111656","DOIUrl":"https://doi.org/10.1109/PVSC.1990.111656","url":null,"abstract":"Minority carrier lifetime and surface recombination velocity are determined in organometallic vapor-phase epitaxy (OMVPE)-grown InP by a contactless microwave technique. For lightly doped n-type InP, a surface recombination velocity of 5000 cm/s is measured. However, in solar cells with a heavily doped n-type emitter a surface recombination velocity of 1*10/sup 6/ cm/s is observed. Possible reasons for this due to surface pinning are discussed. The effects of various chemical treatments and SiO on the surface recombination velocity are measured.<<ETX>>","PeriodicalId":211778,"journal":{"name":"IEEE Conference on Photovoltaic Specialists","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130578842","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Correlations of single-crystal CuInSe/sub 2/ surface processing with defect levels and cell performance 单晶CuInSe/sub - 2/表面处理与缺陷水平和电池性能的相关性
IEEE Conference on Photovoltaic Specialists Pub Date : 1990-05-21 DOI: 10.1109/PVSC.1990.111680
F. Abou-Elfotouh, L. Kazmerski, A. Bakry, A. Al-Douri
{"title":"Correlations of single-crystal CuInSe/sub 2/ surface processing with defect levels and cell performance","authors":"F. Abou-Elfotouh, L. Kazmerski, A. Bakry, A. Al-Douri","doi":"10.1109/PVSC.1990.111680","DOIUrl":"https://doi.org/10.1109/PVSC.1990.111680","url":null,"abstract":"The surface treatments include polishing, etching, and annealing, In particular, high-resolution photoluminescence (PL) and deep-level transient spectroscopy (DLTS) are used to identify the dominant defect states in cleaved and processed solar (cell structures (including heterostructure formation with (Cd,Zn)S and Schottky barriers with Al on p-CuInSe/sub 2/ single crystals). These results are correlated with the junction electrical characteristics. Atomic-level images using spectroscopic scanning tunneling microscopy (SSTM) confirm the physical nature of the defect levels. Radiative recombination levels originating from the processing are identified near the surface region of the CuInSe/sub 2/ crystals. The energy and depth locations of these states that evolve from the formation of a defect nonstoichiometric interfacial layer can limit the performance of the (Cd,Zn)S/sub 2/ single crystal CuInSe2 cells. The four major trapping levels have been confirmed by DLTS measurements. Two of these are shallow levels in the energy regions 100-114 and 150-185 meV, and two are deep levels in the range 340-385 and 475-496 meV, respectively.<<ETX>>","PeriodicalId":211778,"journal":{"name":"IEEE Conference on Photovoltaic Specialists","volume":"222 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123505718","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
PV performance measurement algorithms procedures and equipment 光伏性能测量算法、程序和设备
IEEE Conference on Photovoltaic Specialists Pub Date : 1990-05-21 DOI: 10.1109/PVSC.1990.111781
K. A. Emergy, Carl R. Osterwald
{"title":"PV performance measurement algorithms procedures and equipment","authors":"K. A. Emergy, Carl R. Osterwald","doi":"10.1109/PVSC.1990.111781","DOIUrl":"https://doi.org/10.1109/PVSC.1990.111781","url":null,"abstract":"The voltage bias rate, the bias direction, the premeasurement conditions, and the spectral irradiance of the light source all have an effect on the measured current versus voltage (I-V) characteristics of a photovoltaic (PV) device. These effects are quantified for a variety of different device structures. Algorithms for determining the maximum power point are compared for several devices using the same data acquisition system. The effects of voltage bias rate and direction on the I-V characteristics are quantified for several different material systems. It is pointed out that often these effects are not documented in the reporting of the I-V characteristics, and the most favorable premeasurement conditions are used instead. The I-V characteristics of two-terminal tandems are a function of the light source. Procedures have been adopted by several groups that allow the I-V characteristic of any tandem structure to be determined with respect to a fixed set of reference conditions. The algorithm used to determine the maximum power can affect the performance, causing an unrealistically high or low efficiency.<<ETX>>","PeriodicalId":211778,"journal":{"name":"IEEE Conference on Photovoltaic Specialists","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123639052","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
Intrinsic microcrystalline silicon deposited by remote PECVD: a new thin-film photovoltaic material 远距离PECVD沉积本征微晶硅:一种新型光伏薄膜材料
IEEE Conference on Photovoltaic Specialists Pub Date : 1990-05-21 DOI: 10.1109/PVSC.1990.111882
A. Wang, G. Lucovsky
{"title":"Intrinsic microcrystalline silicon deposited by remote PECVD: a new thin-film photovoltaic material","authors":"A. Wang, G. Lucovsky","doi":"10.1109/PVSC.1990.111882","DOIUrl":"https://doi.org/10.1109/PVSC.1990.111882","url":null,"abstract":"Remote plasma-enhanced chemical-vapor deposition (remote PECVD) was used to deposit photovoltaic (PV)-grade intrinsic and n- and p-type a-Si:H, heavily doped n- and p-type mu c-Si thin films, and a photovoltaic material, a highly photoconductive intrinsic mu c-Si material. This material is deposited by compensating the native defects in the as-deposited, undoped materials with a relatively small amount of boron. The dark conductivity of this compensated intrinsic material is reduced significantly with respect to the undoped mu c-Si, and the films display a level of photoconductivity comparable to that of PV-grade intrinsic a-Si:H. In addition, the material shows no degradation in photoconductivity after long-term exposure to intense illumination ( approximately 50 mW/cm/sup 2/ for 6 h).<<ETX>>","PeriodicalId":211778,"journal":{"name":"IEEE Conference on Photovoltaic Specialists","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121400548","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 19
Lifetime measurements by open circuit voltage decay in GaAs and InP diodes GaAs和InP二极管开路电压衰减的寿命测量
IEEE Conference on Photovoltaic Specialists Pub Date : 1990-05-21 DOI: 10.1109/PVSC.1990.111654
H. Bhimnathwala, S. Tyagi, S. Bothra, S. Ghandi, J. Borrego
{"title":"Lifetime measurements by open circuit voltage decay in GaAs and InP diodes","authors":"H. Bhimnathwala, S. Tyagi, S. Bothra, S. Ghandi, J. Borrego","doi":"10.1109/PVSC.1990.111654","DOIUrl":"https://doi.org/10.1109/PVSC.1990.111654","url":null,"abstract":"Minority carrier lifetimes in the base of solar cells made on GaAs and InP were measured by the open-circuit voltage decay method. The measurement technique and the conditions under which the minority carrier lifetimes can be measured are described. Minority carrier lifetimes ranging from 1.6 to 34 ns in InP of different doping concentrations were measured. A minority carrier lifetime of 6ns was measured in n-type GaAs, which agrees well with the lifetime of 5.7 ns measured by transient microwave reflection.<<ETX>>","PeriodicalId":211778,"journal":{"name":"IEEE Conference on Photovoltaic Specialists","volume":"116 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121562421","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
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