Intrinsic microcrystalline silicon deposited by remote PECVD: a new thin-film photovoltaic material

Abstract

Remote plasma-enhanced chemical-vapor deposition (remote PECVD) was used to deposit photovoltaic (PV)-grade intrinsic and n- and p-type a-Si:H, heavily doped n- and p-type mu c-Si thin films, and a photovoltaic material, a highly photoconductive intrinsic mu c-Si material. This material is deposited by compensating the native defects in the as-deposited, undoped materials with a relatively small amount of boron. The dark conductivity of this compensated intrinsic material is reduced significantly with respect to the undoped mu c-Si, and the films display a level of photoconductivity comparable to that of PV-grade intrinsic a-Si:H. In addition, the material shows no degradation in photoconductivity after long-term exposure to intense illumination ( approximately 50 mW/cm/sup 2/ for 6 h).<>