Correlations of single-crystal CuInSe/sub 2/ surface processing with defect levels and cell performance

IEEE Conference on Photovoltaic Specialists Pub Date : 1990-05-21 DOI:10.1109/PVSC.1990.111680

F. Abou-Elfotouh, L. Kazmerski, A. Bakry, A. Al-Douri

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引用次数: 4

Abstract

The surface treatments include polishing, etching, and annealing, In particular, high-resolution photoluminescence (PL) and deep-level transient spectroscopy (DLTS) are used to identify the dominant defect states in cleaved and processed solar (cell structures (including heterostructure formation with (Cd,Zn)S and Schottky barriers with Al on p-CuInSe/sub 2/ single crystals). These results are correlated with the junction electrical characteristics. Atomic-level images using spectroscopic scanning tunneling microscopy (SSTM) confirm the physical nature of the defect levels. Radiative recombination levels originating from the processing are identified near the surface region of the CuInSe/sub 2/ crystals. The energy and depth locations of these states that evolve from the formation of a defect nonstoichiometric interfacial layer can limit the performance of the (Cd,Zn)S/sub 2/ single crystal CuInSe2 cells. The four major trapping levels have been confirmed by DLTS measurements. Two of these are shallow levels in the energy regions 100-114 and 150-185 meV, and two are deep levels in the range 340-385 and 475-496 meV, respectively.<>

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单晶CuInSe/sub - 2/表面处理与缺陷水平和电池性能的相关性

表面处理包括抛光、蚀刻和退火，特别是高分辨率光致发光(PL)和深能级瞬态光谱(DLTS)用于识别切割和加工的太阳能电池结构中的主要缺陷状态(包括p-CuInSe/sub 2/单晶上形成的(Cd,Zn)S异质结构和Al的肖特基势垒)。这些结果与结电特性有关。使用光谱扫描隧道显微镜(SSTM)的原子级图像确认了缺陷级别的物理性质。在CuInSe/sub - 2/晶体的表面区域附近确定了加工过程中产生的辐射复合水平。这些由缺陷非化学计量界面层形成的态的能量和深度位置限制了(Cd,Zn)S/sub 2/ CuInSe2单晶电池的性能。四种主要的捕获水平已被DLTS测量证实。其中两个是100-114和150-185 meV的浅层能级，两个是340-385和475-496 meV的深层能级。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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IEEE Conference on Photovoltaic Specialists

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