GaAs和InP二极管开路电压衰减的寿命测量

IEEE Conference on Photovoltaic Specialists Pub Date : 1990-05-21 DOI:10.1109/PVSC.1990.111654

H. Bhimnathwala, S. Tyagi, S. Bothra, S. Ghandi, J. Borrego

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引用次数: 5

摘要

采用开路电压衰减法测量了GaAs和InP制备的太阳能电池基底中的少数载流子寿命。介绍了测量技术和测量少数载流子寿命的条件。测定了不同掺杂浓度的InP中少数载流子寿命在1.6 ~ 34 ns之间。n型GaAs的少数载流子寿命为6ns，与瞬态微波反射测得的5.7 ns寿命基本一致。

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Lifetime measurements by open circuit voltage decay in GaAs and InP diodes

Minority carrier lifetimes in the base of solar cells made on GaAs and InP were measured by the open-circuit voltage decay method. The measurement technique and the conditions under which the minority carrier lifetimes can be measured are described. Minority carrier lifetimes ranging from 1.6 to 34 ns in InP of different doping concentrations were measured. A minority carrier lifetime of 6ns was measured in n-type GaAs, which agrees well with the lifetime of 5.7 ns measured by transient microwave reflection.<>

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IEEE Conference on Photovoltaic Specialists

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