{"title":"High Frequency Modulation Characteristics of GaAs-Based Semiconductor Coupled-Waveguide Optical Modulators","authors":"K. Tada, S. Kawanishi, M. Wang, M. Tsuchiya","doi":"10.1364/igwo.1984.wb4","DOIUrl":"https://doi.org/10.1364/igwo.1984.wb4","url":null,"abstract":"The coupled waveguide optical modulator/switch (the electrically switched optical directional coupler) is one of the most important components in guided-wave and integrated optics, and several device structures for GaAs-based or InP-based semiconductors have been devised[1-11]. All of them are based on the electrooptic effect in the depletion region of the reverse-biased pn junction or Schottky contact. Among them, a double-heterostructure (DH) device with pn junction in strip-loaded channel waveguide configuration as shown in Fig.1 is expected to have the lowest modulating voltage and modulating power per bandwidth P/∆f because of the most efficient overlap of the modulating electric field with the optical field [4,12]. Similar but homostructure devices were fabricaed by Carenco and others [13,14]. Recently GaAs-Al0.04Ga0.96As DH devices with nearly full switching characteristics have been fabricated for the first time [10].","PeriodicalId":208165,"journal":{"name":"Seventh Topical Meeting on Integrated and Guided-Wave Optics","volume":"283 2","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"113994680","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Microwave Direct Frequency Modulation of Cleaved-Coupled-Cavity InGaAsP Channeled Substrate Lasers","authors":"R. Tucker, J. Bowers, C. Burrus","doi":"10.1364/igwo.1984.wb6","DOIUrl":"https://doi.org/10.1364/igwo.1984.wb6","url":null,"abstract":"It is well known that directly modulated semiconductor lasers exhibit changes in oscillation frequency due to variations in the refractive index and cavity temperature [1]. Frequency modulation (FM) and frequency shift keying (FSK) are potentially useful in coherent lightwave communications but pulse spreading resulting from fiber dispersion associated with undesired FM can seriously degrade the performance of high-speed long-haul intensity modulation systems.","PeriodicalId":208165,"journal":{"name":"Seventh Topical Meeting on Integrated and Guided-Wave Optics","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130620155","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
O. Yamazaki, K. Wasa, T. Kawaguchi, Y. Manabe, H. Adachi, H. Higashino, K. Setsune
{"title":"High-Speed PLZT Optical Switches","authors":"O. Yamazaki, K. Wasa, T. Kawaguchi, Y. Manabe, H. Adachi, H. Higashino, K. Setsune","doi":"10.1364/igwo.1984.tua6","DOIUrl":"https://doi.org/10.1364/igwo.1984.tua6","url":null,"abstract":"PLZT [(Pb,La)(Zr,Ti)O3] thin film is one of the most promising materials for optical integrated circuits. The PLZT films have potential for their stronger electrooptic effect than conventional Ti-diffused LiNbO3 and for monolithic integration with other active devices fabricated on a same substrate. Several workers have tried to prepare PLZT films of optical quality1,2). Using an rf-planar magnetron sputtering system, we succeeded in epitaxial growth of PLZT single crystal film on sapphire from PLZT(28/0/100) target and confirmed an electrooptic effect of the film3). Basic operation of optical switches have been also confirmed4). In this paper, we report high frequency operation, optical damage of the PLZT switches and propose a butt-coupling technique in a layered structure.","PeriodicalId":208165,"journal":{"name":"Seventh Topical Meeting on Integrated and Guided-Wave Optics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130663875","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Mass-Tranported GaInAsP/InP Buried-Heterostructure Lasers and Integrated Mirrors*","authors":"Z. Liau, J. Walpole, D. Tsang","doi":"10.1364/igwo.1984.tuc5","DOIUrl":"https://doi.org/10.1364/igwo.1984.tuc5","url":null,"abstract":"The recently developed mass-transport technique1-6 offers possibilities for novel devices in integrated optoelectronics. The first demonstration was a simple method for fabrication of GaInAsP/InP buried-heterostructure (BH) lasers, in which the transported InP filled in an undercut mesa and buried the active region.1-4 In this paper, we report continued developments. First, for a more complete characterization of the new BH lasers, theoretical and experimental studies were performed to improve 1ight-current (L-I) linearity at high output powers. Second, the mass-transport phenomenon has been used in a new procedure to improve chemically etched mirror facets.7 Vertical and smooth mirrors are obtained and the BH lasers with one such mirror have high device yield and threshold currents as low as 5 mA (lowest of quaternary lasers reported to date and an order of magnitude improvement from values previously achieved in etched-mirror lasers8-10). Finally, the mass-transport technique has been used to form next to the laser a slant mirror which has the capability of deflecting the laser output upward for surface emission.","PeriodicalId":208165,"journal":{"name":"Seventh Topical Meeting on Integrated and Guided-Wave Optics","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134432928","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Fiber Optic Recirculating Analog Delay Line","authors":"C. Wang, R. Moeller, W. Burns, I. Kaminow","doi":"10.1364/igwo.1984.wa4","DOIUrl":"https://doi.org/10.1364/igwo.1984.wa4","url":null,"abstract":"Single mode fibers appear to be attractive for delay line applications as their low loss and high bandwidth should lead to a large time-bandwidth product, which determines the information storage capacity of the delay line. We are interested in analog signal storage for a noncoherent radar application1 in which the optical delay line provides a time delay equal to the radar pulse repetition frequency, and radar returns are stored until they can be subtracted from the next incoming pulse. The pulse subtraction provides an indication of a moving target. Design considerations for the delay line are dynamic range, linearity, signal-to-noise ratio (SNR) and cancellation or signal-to-distortion ratio. By recirculating a 2 ns pulse around a 20 km single mode fiber five times, we obtain the equivalent of a 100 km or 0.5 msec delay and a time-bandwidth product of > 105.","PeriodicalId":208165,"journal":{"name":"Seventh Topical Meeting on Integrated and Guided-Wave Optics","volume":"93 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134459398","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Anisotropic Polarizers for Ti: LiNbO3 Strip Waveguides","authors":"M. Papuchon, M. Enard, K. Thyagarajan, M. Vatoux","doi":"10.1364/igwo.1984.wc5","DOIUrl":"https://doi.org/10.1364/igwo.1984.wc5","url":null,"abstract":"Polarizers are important devices for integrated optic applications. Several solutions have been already proposed and experimentally verified with different types of waveguides. In general they can be separated into two classes:\u0000 The polarizers based on a differential attenuation for TE and TM and the polarizers working on a principle similar to anisotropic devices in classical optics.","PeriodicalId":208165,"journal":{"name":"Seventh Topical Meeting on Integrated and Guided-Wave Optics","volume":"119 3","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132236598","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A. Carenco, P. Sansonetti, L. Menigaux, J. Brandon, M. Rondot
{"title":"Low-Loss GaAs-AlxGa1-xAs Double Heterostructure Directional Coupler","authors":"A. Carenco, P. Sansonetti, L. Menigaux, J. Brandon, M. Rondot","doi":"10.1364/igwo.1984.thb4","DOIUrl":"https://doi.org/10.1364/igwo.1984.thb4","url":null,"abstract":"The interest of III-V semiconductors for optical monolithic integration is well established. A fundamental problem to solve before being able to take full advantage of the large potentiality of semiconductor monolithic circuits is to realize single-mode waveguides in these materials exhibiting very low propagation loss (≲ 1 dB/cm). For instance, the problem affects electro-optic directional couplers, which are considered as basic unit in integrated optics. In spite of obvious qualities (especially concerning expected electrical bandwidth), the relatively large optical loss exhibited by the most efficient ones has precluded their use in systems. We report here the realization of an electro-optic directional coupler using double-heterostructure GaAs-AlxGa1-xAs waveguides, which provides lower propagation loss (1dB/cm) compared to previously reported results, while maintaining good switching properties (< 15 V) both at 1.3 and 1.5μm.","PeriodicalId":208165,"journal":{"name":"Seventh Topical Meeting on Integrated and Guided-Wave Optics","volume":"268 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115681006","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"High-Performance Focusing Grating Coupler Fabricated by Electron-Beam Writing","authors":"T. Suhara","doi":"10.1364/igwo.1984.thd4","DOIUrl":"https://doi.org/10.1364/igwo.1984.thd4","url":null,"abstract":"Focusing grating couplers (FGC's)1, 2 are an attractive component for integrated optics, since they have applications as thin film waveguide to LD or fiber couplers and can also be the key component for the future integration of optical disc pickup devices. The FGC's fabricated by the holographic technique1, however, have limited application since they exhibit large aberration due to the difference in wavelength between the fabrication light and the coupling light. By the electron-beam (EB) writing, aberration-free FGC's for use at arbitrary wavelength can be fabricated2. In this paper, we present a high-efficiency diffraction-limited focusing grating coupler fabricated by the EB writing.","PeriodicalId":208165,"journal":{"name":"Seventh Topical Meeting on Integrated and Guided-Wave Optics","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124062078","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Thermo-Optic Phase Modulation in Single-Mode Glass Waveguides","authors":"T. Findakly, B. Chen","doi":"10.1364/igwo.1984.thb5","DOIUrl":"https://doi.org/10.1364/igwo.1984.thb5","url":null,"abstract":"Low speed active integrated - optical devices fabricated on glass substrates are investigated. Glass waveguides fabricated by ion-exchange are low loss (< 0.2 dB/cm), easy to fabricate, and immune to optical damage as encounted in LiNbO3 waveguides, which make them attractive for certain applications that do not require high speeds. Thermal effects in dielectric waveguides induce refractive index perturbations.1 This, along with the thermal expansion, can be utilized to generate phase modulation in dielectric materials, such as glass. In this paper, we report the experimental results of thermo-optical phase modulation and switching in single mode integrated-optical glass structures.","PeriodicalId":208165,"journal":{"name":"Seventh Topical Meeting on Integrated and Guided-Wave Optics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122488013","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Integrated Optical Signal Processing Devices Employing Magnetostatic Waves","authors":"A. Fisher, John N. Lee","doi":"10.1364/igwo.1984.tub4","DOIUrl":"https://doi.org/10.1364/igwo.1984.tub4","url":null,"abstract":"Optical techniques are being increasingly called upon to meet the ever-growing data rate requirements of communications and signal processing applications. A new class of magneto-optical devices1,2 based on Bragg diffraction of light by magnetostatic waves (MSWs) offers the potential of extending optical processing capabilities from the present acousto-optical Limitation of a few GHz to large time-bandwidth signal processing at 20 GHz and beyond. These devices take a thin-film integrated optical form in order to avoid shape-factor demagnetization effects.1,3 The interacting MSW and guided-optical waves thus propagate in a common ferrite film, as illustrated in Fig. 1.","PeriodicalId":208165,"journal":{"name":"Seventh Topical Meeting on Integrated and Guided-Wave Optics","volume":"89 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125395713","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}