Seventh Topical Meeting on Integrated and Guided-Wave Optics最新文献

InGaAsP/InP Waveguide Grating Filters for λ=1.5μm λ=1.5μm的InGaAsP/InP波导光栅滤波器

Seventh Topical Meeting on Integrated and Guided-Wave Optics Pub Date : 1984-12-15 DOI: 10.1063/1.95111

R. Alferness, C. Joyner, M. Divino, L. Buhl

引用次数: 21

Channeled-Substrate GaAs/AlGaAs Multiple Quantum-Well Lasers Grown by Molecular Beam Epitaxy 分子束外延生长的通道衬底GaAs/AlGaAs多量子阱激光器

Seventh Topical Meeting on Integrated and Guided-Wave Optics Pub Date : 1984-09-15 DOI: 10.1063/1.95326

Yao-Hwa Wu, M. Werner, Shyh Wang

{"title":"Channeled-Substrate GaAs/AlGaAs Multiple Quantum-Well Lasers Grown by Molecular Beam Epitaxy","authors":"Yao-Hwa Wu, M. Werner, Shyh Wang","doi":"10.1063/1.95326","DOIUrl":"https://doi.org/10.1063/1.95326","url":null,"abstract":"Single and multiple quantum-well (MQW) lasers have been extensively investigated1,2. Besides their low threshold current density, these quantum-well heterostructure lasers exibit good linearity in light-output versus current characteristics, a high external differential quantum efficiency, and a high value of To which is a measure of lesser temperature sensitivity. To date, however, there have been few studies3,4 concerning the index-guiding of these quantum-well lasers which is of great interest for practical applications. For fiber-optical communications at high data rates, the control and stability of the lasing modes have become of great concern. Although it is commonly believed that crystal growth using molecular beam epitaxy (MBE) reproduces substrate features with uniform thickness, we have found that growth is sufficiently inhomogeneous to produce thickness variation in the epilayer over the channels. From our laboratory, we have reported the achievement of a single-longitudinal-mode operation of AlxGa1−xAs/GaAs simple double-heterostructure (DH) lasers made by MBE over the channels along [110] direction which provides for lateral modes stabilization. In this paper, we are going to present the fabrication processes and the characteristics of channeled-substrate AlxGa1−xAs/GaAs MQW lasers grown by MBE.","PeriodicalId":208165,"journal":{"name":"Seventh Topical Meeting on Integrated and Guided-Wave Optics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1984-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131280357","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 8

Self-sustained Picosecond Pulse Generation in a GaAlAs Laser at an Electrically Tunable Repetition Rate 电可调重复频率下GaAlAs激光器中自维持皮秒脉冲的产生

Seventh Topical Meeting on Integrated and Guided-Wave Optics Pub Date : 1984-07-15 DOI: 10.1063/1.95140

K. Lau, A. Yariv

{"title":"Self-sustained Picosecond Pulse Generation in a GaAlAs Laser at an Electrically Tunable Repetition Rate","authors":"K. Lau, A. Yariv","doi":"10.1063/1.95140","DOIUrl":"https://doi.org/10.1063/1.95140","url":null,"abstract":"Picosecond pulse generation from semiconductor lasers at high repetition rate is generally accomplished by two different means: mode-locking or direct electrical excitation. The shortest ever pulses of below lps was generated from a passively mode-locked GaAlAs laser [1], while active mode-locking produces somewhat longer optical pulses. The pulse repetion rate of the mode-locked laser is determined by the length of the external cavity and cannot be varied easily. The rather critical optical alignment necessary for operating the laser in an external cavity makes these mode-locked semiconductor lasers somewhat inconvenient in practical applications. A second means of picosecond pulse generation is by directly pumping the laser with intense, short electrical pulses [2,3] or by large amplitude sinusoidal current modulation [4,5]. Optical pulses generated by such means have pulse widths in the vicinity of 15-35 ps. This scheme requires an external RF source for exciting the laser. In this work, we will show that by using a state-of-the-art high speed laser in the optoelectronic feedback configuration shown in Fig. 1, highly stable optical pulses (with jitters of <10fs), with pulse widths between 10 and 20 ps can be generated, with a very high repetition rate from 1 5GHz which can be electrically tuned. This scheme has the advantage of eradicating the necessity of any external RF drive and/or sensitive optical alignment.","PeriodicalId":208165,"journal":{"name":"Seventh Topical Meeting on Integrated and Guided-Wave Optics","volume":"286 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1984-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125742425","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 40

Extended Precision in Video-Bandwidth Analog-to-Digital Converters Using Optical Techniques 利用光学技术提高视频带宽模数转换器的精度

Seventh Topical Meeting on Integrated and Guided-Wave Optics Pub Date : 1984-04-12 DOI: 10.1049/EL:19840239

H. Taylor

引用次数: 2

Three Channels Buried Crescent InGaAsP Laser with 1.51 μm Wavelength on Semi-insulating InP 半绝缘InP上1.51 μm波长三通道埋月InGaAsP激光器

Seventh Topical Meeting on Integrated and Guided-Wave Optics Pub Date : 1984-02-16 DOI: 10.1049/EL:19840118

U. Koren, S. Arai, P. Tien

引用次数: 4

Characterization of Instability in Ti-indiffused LiNbO3 Modulators Due to Photorefractive and Non-Optical Sources* 光折变和非光源对ti扩散LiNbO3调制器不稳定性的表征*

Seventh Topical Meeting on Integrated and Guided-Wave Optics Pub Date : 1900-01-01 DOI: 10.1364/igwo.1984.wc3

R. Becker

引用次数: 0

Noise and Dynamic Aspects of Semiconductor Lasers 半导体激光器的噪声和动态方面

Seventh Topical Meeting on Integrated and Guided-Wave Optics Pub Date : 1900-01-01 DOI: 10.1364/igwo.1984.wb1

A. Yariv, K. Vahala

引用次数: 0

Ti:LiNbO3 Linear Interferometric Modulators and Photorefractive Effects Ti:LiNbO3线性干涉调制器和光折变效应

Seventh Topical Meeting on Integrated and Guided-Wave Optics Pub Date : 1900-01-01 DOI: 10.1364/igwo.1984.wc1

C. Bulmer, W. Burns, S. C. Hiser

引用次数: 1

Integrated Quantum Well Laser/MESFET Transmitter Using Selective MOCVD Epitaxy and Ion Implantation 选择性MOCVD外延和离子注入集成量子阱激光/MESFET发射机

Seventh Topical Meeting on Integrated and Guided-Wave Optics Pub Date : 1900-01-01 DOI: 10.1364/igwo.1984.tud3

C. Hong, D. Kasemset, M. Kim, R. Milano

引用次数: 0

Coherent Raman Scattering in Thin Film Waveguides 薄膜波导中的相干拉曼散射

Seventh Topical Meeting on Integrated and Guided-Wave Optics Pub Date : 1900-01-01 DOI: 10.1364/igwo.1984.tub5

W. Hetherington, N.E. VanWyck, E. W. Koenig

引用次数: 0