Ti:LiNbO3线性干涉调制器和光折变效应

C. Bulmer, W. Burns, S. C. Hiser
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引用次数: 1

摘要

线性操作的Ti:LiNbO3通道波导干涉调制器与不对称臂之前证明了在633 nm.1该器件由偶极子天线驱动,与单模光纤耦合2,形成集成光电磁场传感器。使用单偏振干涉仪,在830 nm处实现了大幅度改进的动态范围。我们还观察到光折射率变化(光损伤)对器件性能的影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Ti:LiNbO3 Linear Interferometric Modulators and Photorefractive Effects
Linear operation of a Ti:LiNbO3 channel waveguide interferometric modulator with asymmetric arms was previously demonstrated at 633 nm.1 Such a device, when driven by a dipole antenna and coupled with single mode fibers,2 would form an integrated optic electromagnetic field sensor. Much improved dynamic range has now been achieved at 830 nm using a single-polarization interferometer. We have also observed the effects of photorefractive induced index change (optical damage) on device performance.
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