Integrated Quantum Well Laser/MESFET Transmitter Using Selective MOCVD Epitaxy and Ion Implantation

Abstract

The development of GaAlAs/GaAs integrated optoelectronic devices1 and circuits2 (IOEC) has been motivated by the potential of optical communications in high-density, high–data–rate interconnection of integrated circuits or signal processing systems. Recently, we have demonstrated a monolithic integration scheme which is compatible with the ion-implanted GaAs IC fabrication.3 Here, we report a high-performance integrated quantum well laser/MESFET transmitter using this integration scheme. The use of quantum well laser structures in the transmitter design is twofold. Low threshold can be obtained with a simple stripe geometry which facilitates integration, and second, quantum well lasers exhibit better dynamic characteristics than the conventional lasers under direct modulation.