High-Speed PLZT Optical Switches

Abstract

PLZT [(Pb,La)(Zr,Ti)O3] thin film is one of the most promising materials for optical integrated circuits. The PLZT films have potential for their stronger electrooptic effect than conventional Ti-diffused LiNbO3 and for monolithic integration with other active devices fabricated on a same substrate. Several workers have tried to prepare PLZT films of optical quality1,2). Using an rf-planar magnetron sputtering system, we succeeded in epitaxial growth of PLZT single crystal film on sapphire from PLZT(28/0/100) target and confirmed an electrooptic effect of the film3). Basic operation of optical switches have been also confirmed4). In this paper, we report high frequency operation, optical damage of the PLZT switches and propose a butt-coupling technique in a layered structure.