Mass-Tranported GaInAsP/InP Buried-Heterostructure Lasers and Integrated Mirrors*

Abstract

The recently developed mass-transport technique1-6 offers possibilities for novel devices in integrated optoelectronics. The first demonstration was a simple method for fabrication of GaInAsP/InP buried-heterostructure (BH) lasers, in which the transported InP filled in an undercut mesa and buried the active region.1-4 In this paper, we report continued developments. First, for a more complete characterization of the new BH lasers, theoretical and experimental studies were performed to improve 1ight-current (L-I) linearity at high output powers. Second, the mass-transport phenomenon has been used in a new procedure to improve chemically etched mirror facets.7 Vertical and smooth mirrors are obtained and the BH lasers with one such mirror have high device yield and threshold currents as low as 5 mA (lowest of quaternary lasers reported to date and an order of magnitude improvement from values previously achieved in etched-mirror lasers8-10). Finally, the mass-transport technique has been used to form next to the laser a slant mirror which has the capability of deflecting the laser output upward for surface emission.