Low-Loss GaAs-AlxGa1-xAs Double Heterostructure Directional Coupler

A. Carenco, P. Sansonetti, L. Menigaux, J. Brandon, M. Rondot
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引用次数: 0

Abstract

The interest of III-V semiconductors for optical monolithic integration is well established. A fundamental problem to solve before being able to take full advantage of the large potentiality of semiconductor monolithic circuits is to realize single-mode waveguides in these materials exhibiting very low propagation loss (≲ 1 dB/cm). For instance, the problem affects electro-optic directional couplers, which are considered as basic unit in integrated optics. In spite of obvious qualities (especially concerning expected electrical bandwidth), the relatively large optical loss exhibited by the most efficient ones has precluded their use in systems. We report here the realization of an electro-optic directional coupler using double-heterostructure GaAs-AlxGa1-xAs waveguides, which provides lower propagation loss (1dB/cm) compared to previously reported results, while maintaining good switching properties (< 15 V) both at 1.3 and 1.5μm.
低损耗GaAs-AlxGa1-xAs双异质结构定向耦合器
III-V型半导体对光单片集成的兴趣是很好的建立。在能够充分利用半导体单片电路的巨大潜力之前,需要解决的一个基本问题是在这些材料中实现具有极低传播损耗(小于1 dB/cm)的单模波导。例如,这个问题影响到作为集成光学基本单元的电光定向耦合器。尽管具有明显的质量(特别是在预期的电带宽方面),但最有效的激光器所表现出的相对较大的光损耗阻碍了它们在系统中的应用。我们在这里报告了使用双异质结构GaAs-AlxGa1-xAs波导实现的电光定向耦合器,与之前报道的结果相比,它提供了更低的传播损耗(1dB/cm),同时在1.3和1.5μm保持良好的开关特性(< 15 V)。
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