Proceedings of 1st International Symposium on Plasma Process-Induced Damage最新文献_第4页

Gate Material Dependence Of Process Charging Damage In Thin Gate Oxide 薄栅极氧化物中工艺充电损伤的栅极材料依赖性

Proceedings of 1st International Symposium on Plasma Process-Induced Damage Pub Date : 1996-05-13 DOI: 10.1109/PPID.1996.715228

A. Acovic, A. Ray, J. Sun, J. Herman, T. Furukawa, R. Geiger, K. Beyer, V. McGahay, S. Greco, W. Abadeer

引用次数: 2

Characterisation of a Gasonics A1000 Microwave Photoresist Ashing System using the CHARM-2 Plasma Charging Monitor 用CHARM-2等离子体充电监测仪表征Gasonics A1000微波光刻胶灰化系统

Proceedings of 1st International Symposium on Plasma Process-Induced Damage Pub Date : 1996-05-13 DOI: 10.1109/PPID.1996.715212

A. Cowley

引用次数: 0

Plasma Etching Process Induced Closed-loop Metal Pattern Damage 等离子体蚀刻工艺引起的闭环金属图案损伤

Proceedings of 1st International Symposium on Plasma Process-Induced Damage Pub Date : 1996-05-13 DOI: 10.1109/PPID.1996.715242

P. Chu, Ming-Chih Yeh, Chih-Chicn Hung, T. Lin, Ying-Chen Chao

引用次数: 2

Study of Plasma Induced Thin Oxide Damage During AlSiCu Etch AlSiCu蚀刻过程中等离子体诱导薄氧化物损伤的研究

Proceedings of 1st International Symposium on Plasma Process-Induced Damage Pub Date : 1996-05-13 DOI: 10.1109/PPID.1996.715217

Lianjun Liu, G.H.J. Phua

引用次数: 0

Plasma Charging and Damage Evaluation of Reactive Ion Etching using Surface Photovoltage Technique and Corona Pulsed Deep Depletion Technique 表面光电压技术和电晕脉冲深耗尽技术的等离子体充电和反应离子刻蚀损伤评价

Proceedings of 1st International Symposium on Plasma Process-Induced Damage Pub Date : 1996-05-13 DOI: 10.1109/PPID.1996.715209

S. Nagalingami, M. Fung, S. Thind

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引用次数: 0

Localized Pattern-Dependent Damage to Metal During Etch 蚀刻过程中金属的局部模式相关损伤

Proceedings of 1st International Symposium on Plasma Process-Induced Damage Pub Date : 1996-05-13 DOI: 10.1109/PPID.1996.715216

C. Gabriel

引用次数: 1

Charging Effects In Ion Implantation: Measurements and Models 离子注入中的电荷效应:测量和模型

Proceedings of 1st International Symposium on Plasma Process-Induced Damage Pub Date : 1996-05-13 DOI: 10.1109/PPID.1996.715238

M. Current, M. Vella, W. Lukaszek

引用次数: 1

Effect of Low-Temperature Anneal during Multilevel Metallization Process on Plasma-Induced Oxide Damage 多层金属化过程中低温退火对等离子体诱导氧化损伤的影响

Proceedings of 1st International Symposium on Plasma Process-Induced Damage Pub Date : 1996-05-13 DOI: 10.1109/PPID.1996.715234

K. Noguchi, T. Horiuchi

引用次数: 4

Mechanism of Stress-Induced Leakage Due to Plasma Charging and Effect of Oxide Thickness 等离子体充电应力致泄漏机理及氧化层厚度的影响

Proceedings of 1st International Symposium on Plasma Process-Induced Damage Pub Date : 1996-05-13 DOI: 10.1109/PPID.1996.715224

W. Abadeer, G. Hueckel, A. Acovic, A. Ray

引用次数: 1

Control of RIE-induced Surface Damage and Junction Leakage Current in Field Isolation Process 电场隔离过程中rie致表面损伤和结漏电流的控制

Proceedings of 1st International Symposium on Plasma Process-Induced Damage Pub Date : 1996-05-13 DOI: 10.1109/PPID.1996.715237

T. Yamaguchi, T. Sasaki, H. Nikoh

引用次数: 3