Proceedings of 1st International Symposium on Plasma Process-Induced Damage最新文献

{"title":"Slight Etching of Silicon to Control Post-RIE Damage","authors":"D. Hwang, K. Torek, J. Ruzyllo","doi":"10.1109/PPID.1996.715222","DOIUrl":"https://doi.org/10.1109/PPID.1996.715222","url":null,"abstract":"Reactive Ion Etching (RIE) causes contamination and damage to the silicon surface [1,2]. Surface contamination can be removed by cleaning processes, however the heavy damage in the near surface region is not affected by surface cleaning. The extent of damage in this region can cause the silicon to become polycrystalline or even amorphous [3]. Also elements from the p m s gas such as carbon and fluorine are typically introduced during RIE into the near surface region. Their removal is not possible unless a thin layer of silicon is etched off. Etching of silicon is difficult at this point as the use of a wet etch is not practical, while dry etches such as RIE may contribute further undesired alterations of the silicon surface. Consequently, new methods of gas-phase etching of silicon should be developed for this purpose. The goal in the present study was to investigate the use of chemical etching methods to slightly etch silicon and remove the heavily damaged layer and to determine if it is beneficial to surface conditioning after CHF3 reactive ion etching. The etching methods studied include W enhanced C12 and remote plasma Arm3 processes.","PeriodicalId":206175,"journal":{"name":"Proceedings of 1st International Symposium on Plasma Process-Induced Damage","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124933164","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Reduction of the charging damage from electron shading","authors":"K. Hashimoto, Y. Hikosaka, A. Hasegawa, M. Nakamura","doi":"10.1109/PPID.1996.715199","DOIUrl":"https://doi.org/10.1109/PPID.1996.715199","url":null,"abstract":"Gate oxide damage from \"electron shading\" effect and a method to reduce it are described. The electron shading effect is one of the dominant mechanisms of charging damage in via etching and dense-line pattern etching. The damage strength showed a positive correlation with the electron temperature in the plasma. To reduce this kind of h%ge, we synchroNzed the rf bias with a pulse modulation of an ICP source. We obtained the most significant reduction effect by utilizing the coolest electrons at the end of the off period with the rf bias synchronized at that phase. The phase effect was also observed as a reduced damaging current with a new probe structure and a special external circuit.","PeriodicalId":206175,"journal":{"name":"Proceedings of 1st International Symposium on Plasma Process-Induced Damage","volume":" 12","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"113948112","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Ion-implantation-induced damage to gate oxide due to charge injection and ion bombardment","authors":"K. Marneno, H. Nagasawa, A. Nishida, H. Fujiwara","doi":"10.1109/PPID.1996.715239","DOIUrl":"https://doi.org/10.1109/PPID.1996.715239","url":null,"abstract":"Ion-implantation-induced damage to the gate oxide of antenna MOS capacitors was investigated by measuring charge-to-breakdown (QJ. The degradation of the gate oxide was evaluated by investigating the relation between the Q, and the total charge injected into the gate oxide during ion implantation (QJ. It was found that there are three types of degradation due to ion implantation, and that the mechanism of each ty-pe of damage can be classified according to the pattern of Q, degradation against the Q,,. The causes of the damage have been clarified to be charge injection and ion bombardment by analyses of ESR, FTIRATR and current-voltage characteristics.","PeriodicalId":206175,"journal":{"name":"Proceedings of 1st International Symposium on Plasma Process-Induced Damage","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133943441","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Observation of Electrolurninescence and \"Soft-breakdown\" Effects in Sub-0.5/spl mu/m CMOS with Ultrathin Gate Oxides","authors":"M. Okandan, S. Fonash, O. Awadelkarim, Y. Chan","doi":"10.1109/PPID.1996.715230","DOIUrl":"https://doi.org/10.1109/PPID.1996.715230","url":null,"abstract":"Lurmnescence from reverse biased pn junctions and gate regions of MOSFETs is well known[l3]. However, there are four new aspects to the light emission observed in this study from the MOSFET gate areas : (1) the devices used were sub half micron geometry NMOS and PMOS transistors with oxide thicknesses in the range of 45 to 135% (2) light emission is observed at the poly gate-birds beak edge, (3) only devices that had antennas designed for the contact etch step and were processed in a high density plasma etch system exhibit this luminescence, and (4) the presence of nondestructive luminescence correlates with the presence of oxide “soft-breakdown”. The transistors used in this study were LDD CMOS fabricated on 8 in. epi wafers. Gate oxide thicknesses were in the range of 45A to 135w and channel lengths were from 0 . 3 5 ~ to 0.6p.m. Devices with antennas (to intensie the effects of certain plasma processing steps) and control devices (without antennas) were also fabricated. Contact etch antennas consisted of increasing numbers of contacts between metal and poly pads. Our investigations found that biasing conditions for these transistors that put the substrate surfkce into inversion and could lead to impact ionization and subsequent recombination were needed to stimulate and maintain nondestructive light emission from the gate area. For example , the source and drain of transistors had to be floating while the gate was biased to invert the substrate with a large voltage (Vg>lSV). Other biasing conditions, e.g. source and drain grounded, were observed to cause poly gate “ bum-out” . We found that this nondestructive electroluminescence occurred only in devices that had antennas for the contact etch and that these same transistors had a current-voltage behavior we term ‘-soft breakdown. Fig.la shows pictures of light mussion from the gate region (over the birds beak area) that was biased into light emission for several hours by having the source/drain float, whereas Fig.lb shows the poly burning out over the field oxide which was biased with the source/drain grounded. Both pictures were taken using a laser scanning microscope. Fig.2 shows a typical gate leakage current density (Jg) dependence on gate voltage (Vg) in transistors that exhibit the nondestructive gate luminescence. As can be seen in Fig.2, Jg in these transistors is very large (-nA/pm2 at 3.3V). This is in contrast to Jg<lpA/pn2 for control devices. A cumulative plot of the gate leakage current at g . 3 V in luminescent transistors with 9OA thick gate oxides is given in Fig.3. It can be seen from Fig.3 that Jg is very much dependent on antenna ratio with values of the order of 111Np.m~ which tend to be larger for PMOS devices. This trend is also seen in all luminescent transistors with other gate oxide thicknesses. These luminescent transistors with their large Jg values display a “soft-breakdown”; i.e., ail other transistor parameters, namely threshold voltage (Vth), transconductance (g","PeriodicalId":206175,"journal":{"name":"Proceedings of 1st International Symposium on Plasma Process-Induced Damage","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131610447","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Structure Dependence of Notching: Simulation of Topography Dependent Charging with Sheath Oscillation Effect","authors":"T. Kinoshita, M. Hane, J. Mcvittie","doi":"10.1109/PPID.1996.715200","DOIUrl":"https://doi.org/10.1109/PPID.1996.715200","url":null,"abstract":"INTRODUCTION A new mode of plasma charging which depends on the aspect ratio has recently been observed during polysilicon etching in the form of notching[ 11 and oxide damage[2]. Notching is excessive undercutting seen near the inside bottom of the outermost line during long overetching, shown in Fig. 7. The mechanism behind this charging appears to be the directionality difference between ions and electrons bombarding the surface[l-41. While some modeling of this mechanism has been reported [3,4], the role of the \"bi-modal\" ion energy distribution function (IEDF) caused by RIi bias [5, 61 on this charging has not been considered. Additionally, the details of RF biasing conditions such as Vdc and frequency also affect notching by changing the sheath oscillation.[7] In this work, we investigate the effect of the device structure on the charging potential and the ions bombarding po lysilicon sidewalls by using simulation techniques including a realistic IEDF, In addition, we discuss the impact of the structure details such as aspect ratio, electrical connection, and antenna ratio om subsequent notching. The verification of the simulator is demonstrated by comparing the predicted distribution of the ion energy fluxes along the polysilicon sidewalls with SEMs of experimental results.","PeriodicalId":206175,"journal":{"name":"Proceedings of 1st International Symposium on Plasma Process-Induced Damage","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131201894","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A New Etching Method for Reducing the Electron Shading Damage Using ICP Etcher","authors":"S. Tabara","doi":"10.1109/PPID.1996.715201","DOIUrl":"https://doi.org/10.1109/PPID.1996.715201","url":null,"abstract":"A new metal etching method for reducing the electron shading damage using ICP etcher was proposed. The electron shading damage occurs by the similar mechanism to notch formation. Namely, negative charge-up of sidewall of photoresist by electrons owing to the difference between electrons and ions motion in the plasmas (1,2) . Therefore$ is expected that the etching process with no notch has low electron shading damage. It was found that notch-free overetching process using low inductive power in ICP etcher has low and uniform electron shading damage.","PeriodicalId":206175,"journal":{"name":"Proceedings of 1st International Symposium on Plasma Process-Induced Damage","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131290567","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Process-Induced Gate Oxide Damage Issues in Advanced Plasma Chemical Vapor Deposition Processes","authors":"D. Cote, S. Nguyen, V. McGahay, C. Waskiewicz, S. Chang, A. Stamper, P. Weigand, N. Shoda, T. Matsuda","doi":"10.1109/PPID.1996.715203","DOIUrl":"https://doi.org/10.1109/PPID.1996.715203","url":null,"abstract":"","PeriodicalId":206175,"journal":{"name":"Proceedings of 1st International Symposium on Plasma Process-Induced Damage","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114800838","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"On the use of Fowler-Nordheim stress to reveal plasma-charging damage","authors":"K. Cheung","doi":"10.1109/PPID.1996.715192","DOIUrl":"https://doi.org/10.1109/PPID.1996.715192","url":null,"abstract":"It has been well establlished that to properly evaluate plasma-charging damage, one needs to bring out the latent defects hidden by various temperature cycles. A method of doing so is lo anneal the wafer to detrap all charges and then use Fowler-Nordheim (FN) stress to repopulate discharged traps. By measuring the post FN stress transistor threshold voltage (Vt) and transconductance (Gm) !Shifts, plasma damage is revealed by comparing the damaged devices to a control device or by detecting antenna ratio dependency. Another way to use FN stress to measwe plasma-charging damage is to monitor the voltage required for maintaining a constant current injection through the gate oxide. From the voltage curve, one measures a quantity called Initial Electron Trapping Rate (IETR) or Slope (IETS). IETR=IETS/init. voltage, both are directly proportional to the electron trap density in the oxide under test. Electron trap density in turn is an indicator of plasma damage.","PeriodicalId":206175,"journal":{"name":"Proceedings of 1st International Symposium on Plasma Process-Induced Damage","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129831724","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Estimating RIE Damage by the FLECharacteristics of Bipolar Transistors","authors":"T. Nakanishi, A. Nagami, N. Okumura","doi":"10.1109/PPID.1996.715198","DOIUrl":"https://doi.org/10.1109/PPID.1996.715198","url":null,"abstract":"","PeriodicalId":206175,"journal":{"name":"Proceedings of 1st International Symposium on Plasma Process-Induced Damage","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132018624","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Inductively Coupled Plasmas For Highly Efficient and Low Damage Resist Stripping","authors":"S. Savas","doi":"10.1109/PPID.1996.715219","DOIUrl":"https://doi.org/10.1109/PPID.1996.715219","url":null,"abstract":"A new plasma source using inductively coupled plasma (ICP) excitation has been developed that offers several advantages over more commonly used microwave-based sources, including low generation of damaging species such as charged particles and UV radiation and less heat production by the plasma. The new ICP source is inherently more efficient in producing the neutral reactive (atomic and molecular) oxygen species active in the strip process. A range of damage and contamination tests, including measurements of wafer charging, mobile metal and heavy metal contamination, and minority carrier lifetime degradation, confirm that the ICP source produces less wafer charge damage and contamination than typical microwave systems. This paper discusses the fundamental physics of the ICP source and presents results of computer modeling studies using a Boltzmann code which explain the overall increase in performance. The calculations give the distribution of electron energies in the plasma along with the rate constants for the high energy inelastic collision processes which produce oxygen dissociation, ionization, and UV excitation. These calculations show that in the ICP source, less than 0.3% of the power goes into the production of charged particles and UV radiation, and about 17% goes into the production of heat. The ICP source therefore requires less heavily baffled gas flow and generates a much lower heat load on the plasma chamber walls, making it much more compatible with advanced process chemistries such as those using fluorine.","PeriodicalId":206175,"journal":{"name":"Proceedings of 1st International Symposium on Plasma Process-Induced Damage","volume":"350 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126682212","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}