Proceedings of 1st International Symposium on Plasma Process-Induced Damage最新文献_第3页

Transformation of Ti and TiN Cap Layer by Via-Hole Etching Ti和TiN帽层的过孔刻蚀相变

Proceedings of 1st International Symposium on Plasma Process-Induced Damage Pub Date : 1996-05-14 DOI: 10.1109/PPID.1996.715245

S. Sudo, Y. Ichihashi, N. Ikeda, K. Taketa, K. Marneno

{"title":"Transformation of Ti and TiN Cap Layer by Via-Hole Etching","authors":"S. Sudo, Y. Ichihashi, N. Ikeda, K. Taketa, K. Marneno","doi":"10.1109/PPID.1996.715245","DOIUrl":"https://doi.org/10.1109/PPID.1996.715245","url":null,"abstract":"As the functionality and scale of LSIs have increased, the number of interconnections has grown and the metallization process has become more complex. Multilevel interconnection causes non-uniformity in flatness and lowers the resolution of the photoresist pattern. In order to minimize this problem, a stacked metal structure containing an anti-refractive material on AI has been widely adopted. Furthermore, a stacked metal structure such as TiN/Ti/AI was reported to enhance the electromigration performance'). When a via hole is opened on the stacked metal structure, etching residue sometimes remains on the side wall of the via hole. The reason for this phenomenon is as follows: Most via-hole etching requires over-etching to achieve a certain contact performance, and this process etches off the entire refractory-metal layer on the AI, because of the low selectivity of SiO, etching. If the AI layer is exposed to a fluorocarbon plasma, the residue is formed by a combination of AI with F, and it is difficult to remove by the conventional ashing or wet process. This residue causes poor reliability in contact characteristics. Several researchers have already reported new ideas to avoid this problem? '). One of them is to stop the via-hole etching in the midst of the refractory metal on the AI compound layer. However, in this case, the 2nd metal makes contact with the refractory metal exposed to the plasma. In this paper, we have investigated the transformation of Ti and TIN due to via-hole etching, in order to complete the multilevel interconnection process using a highly reliable TiN/Ti/AI structure.","PeriodicalId":206175,"journal":{"name":"Proceedings of 1st International Symposium on Plasma Process-Induced Damage","volume":"197 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131582827","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Plasma Charging Damage: An Overview 等离子充电伤害:概述

Proceedings of 1st International Symposium on Plasma Process-Induced Damage Pub Date : 1996-05-14 DOI: 10.1109/PPID.1996.715191

J. Mcvittie

引用次数: 26

Techniques for studying charging in plasma processing 等离子体处理中充电的研究技术

Proceedings of 1st International Symposium on Plasma Process-Induced Damage Pub Date : 1996-05-14 DOI: 10.1109/PPID.1996.715210

R. Patrick, P. Jones

{"title":"Techniques for studying charging in plasma processing","authors":"R. Patrick, P. Jones","doi":"10.1109/PPID.1996.715210","DOIUrl":"https://doi.org/10.1109/PPID.1996.715210","url":null,"abstract":"Introduction Two different techniques have been evaluated for their ability to measure the amount of charging, both voltage and current, that might be induced on a wafer surface during plasma processing in a transformer coupled plasmaTM (TCP.9 discharge. The first of these is a passive probe, (CHARge Monitor). This consists of EEPROM sensors on a device wafer which are configured to measure the peak positive and negative potentials seen at the wafer surface during a process. In addition, by connecting a resistance from the collector to the wafer substrate, the current drawn from the plasma may be inferred allowing the i-v characteristic of the plasma source to be determined. The second technique uses an active wafer probe, f i p e 1, which consists of capacitor pads sitting on a field oxide and a substrate connection allowing direct measurement of the charging voltage across the oxide using a digital voltmeter. In addition a ramp bias voltage can be applied to the pads allowing the maximum current which can be sustained by the discharge to be determined. This probe, referred to as a Plasma Charging Monitor (PCM) has a similar design to that described by McVittie3. Figure 1 Layout of Plasmin Charging Monitor (PCM)","PeriodicalId":206175,"journal":{"name":"Proceedings of 1st International Symposium on Plasma Process-Induced Damage","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127647932","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3

Prediction of Plasma Charging Induced Gate Oxide Tunneling Current and Antenna Dependence by Plasma Charging Probe 等离子体充电探针预测等离子体充电诱导栅氧化物隧穿电流及天线依赖性

Proceedings of 1st International Symposium on Plasma Process-Induced Damage Pub Date : 1996-05-14 DOI: 10.1109/PPID.1996.715194

Shawming Ma, J. Mcvittie

引用次数: 18

Plasma Jet Etching at Atmospheric Pressure for Semiconductor Production 常压等离子体喷射蚀刻用于半导体生产

Proceedings of 1st International Symposium on Plasma Process-Induced Damage Pub Date : 1996-05-14 DOI: 10.1109/PPID.1996.715226

O. Siniaguine

引用次数: 1

A Quick Experimental Technique In Estimating The Cumulative Plasma Charging Current with MOSFET and Determining The Reliability of The Protection Diode In The Plasma Ambient 用MOSFET估算等离子体累积充电电流及确定保护二极管在等离子体环境下可靠性的快速实验技术

Proceedings of 1st International Symposium on Plasma Process-Induced Damage Pub Date : 1996-05-13 DOI: 10.1109/PPID.1996.715195

S. Zheng, D. Park, N. Bui, C. Hu, J. Yue

引用次数: 1

Plasma Charging Induced Gate Oxide Damage During Metal Etching and Ashing 等离子体充电在金属蚀刻和灰化过程中引起栅极氧化物损伤

Proceedings of 1st International Symposium on Plasma Process-Induced Damage Pub Date : 1996-05-13 DOI: 10.1109/PPID.1996.715215

H.C. Lin, C. Perng, C. Chien, S. Chiou, T. Huang, C. Chang

引用次数: 2

Fundamental Aspects of Plasma-induced Radiation Damage Of SiO/sub 2//Si - A Review - SiO/ sub2 //Si - A等离子体诱导辐射损伤的基本原理

Proceedings of 1st International Symposium on Plasma Process-Induced Damage Pub Date : 1996-05-13 DOI: 10.1109/PPID.1996.715227

T. Mizutani

引用次数: 3

Quantitative Analysis of Etching Damage in the Highly-Selective Oxide Etching 高选择性氧化蚀刻中蚀刻损伤的定量分析

Proceedings of 1st International Symposium on Plasma Process-Induced Damage Pub Date : 1996-05-13 DOI: 10.1109/PPID.1996.715243

K. Yagi, M. Matsui, F. Uchida, T. Tokunaga

引用次数: 0

The Evaluation of Plasma Damage on N20 Oxide and Pure Oxide N20氧化物和纯氧化物等离子体损伤的评价

Proceedings of 1st International Symposium on Plasma Process-Induced Damage Pub Date : 1996-05-13 DOI: 10.1109/PPID.1996.715233

Jaeseog Yoon, Sang-Don Lee, Bongryul Kim

引用次数: 2