Proceedings of 1st International Symposium on Plasma Process-Induced Damage最新文献_第5页

Role of Test Stress Levels in Detection of Process-Induced Latent Charging Damage in MOS Transistors 测试应力水平在MOS晶体管过程诱发潜在充电损伤检测中的作用

Proceedings of 1st International Symposium on Plasma Process-Induced Damage Pub Date : 1996-05-13 DOI: 10.1109/PPID.1996.715207

T. Broick, Lihua Peng, C. Viswanathan

引用次数: 7

Plasma Etching Induced Damage to Strained Si/SiGe/Si heterostructure 等离子体刻蚀对应变Si/SiGe/Si异质结构的损伤

Proceedings of 1st International Symposium on Plasma Process-Induced Damage Pub Date : 1996-05-13 DOI: 10.1109/PPID.1996.715221

P. K. Swain, D. Misra, M. Cole

引用次数: 1

Minimizing Mobile Ion Damage during the Ash Process 最小化灰烬过程中移动离子的伤害

Proceedings of 1st International Symposium on Plasma Process-Induced Damage Pub Date : 1996-05-13 DOI: 10.1109/PPID.1996.715218

J. Shi, S. Rounds, T. Noble, M. DeSarno, S. Fink, D. Shaner, H. Stants

{"title":"Minimizing Mobile Ion Damage during the Ash Process","authors":"J. Shi, S. Rounds, T. Noble, M. DeSarno, S. Fink, D. Shaner, H. Stants","doi":"10.1109/PPID.1996.715218","DOIUrl":"https://doi.org/10.1109/PPID.1996.715218","url":null,"abstract":"It is generally accepted that mobile ion contamination and the subsequent device damage is a function of the amount of positively charged ions in the ash gas. As device dimensions shrink and gate dielectric thicknesses decrease, the potential for device damage at the photoresist strip level increases. Ozone ashing traditionally has been known to have extremely low ion concentrations in the gas, while barrel, radio frequency, and downstream microwave ashers have posed more damage issues. At the same time, implant and etch conditions frequently make resist harder (or with a carbonized top layer) and resist removal becomes more difficult without device damage. Fusion has developed a downstream microwave asher that produces extremely low ion concentrations while still maintaining excellent ash rates for different applications. Data from the Fusion asher is compared with commercially available ozone and plasma systems under a variety of temperature and RF power conditions. MOS device wafers were used as the primary method of testing mobile ion damage. The mobile ion results of wafers ashed with the Fusion downstream plasma asher are superior to those of wafers ashed with other plasma ashing systems and are comparable to those obtained when resist is removed by ozone asher or conventional wet stripping methods.","PeriodicalId":206175,"journal":{"name":"Proceedings of 1st International Symposium on Plasma Process-Induced Damage","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129739215","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Quantifying Wafer Charging During Via Etch 经孔蚀刻过程中晶圆充电的定量研究

Proceedings of 1st International Symposium on Plasma Process-Induced Damage Pub Date : 1996-05-13 DOI: 10.1109/PPID.1996.715196

W. Lukaszek, A. Birrell

引用次数: 10

The Degradation of MOS Devices by Source/Drain Ion Impantation 源极/漏极离子注入对MOS器件的降解

Proceedings of 1st International Symposium on Plasma Process-Induced Damage Pub Date : 1996-05-13 DOI: 10.1109/PPID.1996.715240

Sang-Don Lee, J. Son, Jaeseog Yoon, K. Huh, Dooyoung Yang

引用次数: 0

Application of Plasma Charging Probe to Production HDP CVD Tool 等离子体充电探头在生产HDP CVD刀具中的应用

Proceedings of 1st International Symposium on Plasma Process-Induced Damage Pub Date : 1996-05-13 DOI: 10.1109/PPID.1996.715205

G. Roche, J. Mcvittie

引用次数: 3

Effect of Process & Etch Variables on Contact Resistance 工艺和蚀刻变量对接触电阻的影响

Proceedings of 1st International Symposium on Plasma Process-Induced Damage Pub Date : 1996-05-13 DOI: 10.1109/PPID.1996.715223

A. Macphie, P. Anderson, G. Boyd

引用次数: 0

Analytical Circuit Model Approach to Charging Damage in Plasma/implantation Processing 等离子体/注入过程中充电损伤的分析电路模型方法

Proceedings of 1st International Symposium on Plasma Process-Induced Damage Pub Date : 1996-05-13 DOI: 10.1109/PPID.1996.715206

W. En, B.P. Shich, N. Cheung

引用次数: 0

Plasma-induced Oxide Contamination In a 0.35 /spl mu/m CMOS Process 0.35 /spl μ m CMOS工艺中等离子体诱导的氧化物污染

Proceedings of 1st International Symposium on Plasma Process-Induced Damage Pub Date : 1996-05-13 DOI: 10.1109/PPID.1996.715244

M. Karnett, J. Zhou, S. Ghosh, D. Echtle, L. Fritz, K. Wu

引用次数: 0

Inductive Damage and the Impact of RF Power and Magnetic Field During MERIE Processes 微波过程中射频功率和磁场的感应损伤及影响

Proceedings of 1st International Symposium on Plasma Process-Induced Damage Pub Date : 1996-05-13 DOI: 10.1109/PPID.1996.715220

A. Salah, O. Awadelkarim, Y. Chan, J. Werking

{"title":"Inductive Damage and the Impact of RF Power and Magnetic Field During MERIE Processes","authors":"A. Salah, O. Awadelkarim, Y. Chan, J. Werking","doi":"10.1109/PPID.1996.715220","DOIUrl":"https://doi.org/10.1109/PPID.1996.715220","url":null,"abstract":"We report on a new form of process-induced damage to submicron MOS transistors caused by metal 1 plasma etching. This form of damage, herein referred to as \"inductive damage\", is suggested to arise from inductive coupling between interconnect circuitry and time-varying magnetic fields during plasma exposure. We demonstrate the occurrence of inductive damage through the use of specially designed test structures consisting of fuse-attached metal loops acting as inductive antennas and connecting the gate and substrate of n-channel and p-channel MOSFETs (Fig. 1). The MOSFETs, with lightly doped drains and channel lengths of 0.25 pm and 0.50 pm, are fabricated on 200 mm p/p'silicon wafers using a full CMOS process flow. The metal 1 etch step was carried out using a BC1JN2/Cl2 plasma in a magnetically-enhanced reactive ion etching (MERIE) tool. From our results, the presence of inductive damage in NMOS transistors is unambiguously established. This is exemplified in the results for maximum transconductance (gm) and subthreshold swing (S) shown in Figs. 2 and 3, respectively. These figures clearly show degradations in both gm and S when devices with inductive antennas are compared to reference devices. We observe that inductive damage is seemingly absent in PMOS devices. We also show that inductive damage in NMOS devices is influenced by the rf power during metal 1 overetch; inductive damage in the transistor increases with increasing r f power (Fig. 4). However, magnetic field intensity (B) in the metal 1 MERIE process is seen to have little effect on inductive damage.","PeriodicalId":206175,"journal":{"name":"Proceedings of 1st International Symposium on Plasma Process-Induced Damage","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126629748","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2