IEEE International Conference on Electro-Information Technology , EIT 2013最新文献_第2页

QR code antennas for WiFi/WLAN/Bluetooth applications 二维码天线用于WiFi/WLAN/蓝牙应用

IEEE International Conference on Electro-Information Technology , EIT 2013 Pub Date : 2013-05-09 DOI: 10.1109/EIT.2013.6632693

A. Numan-Al-Mobin, Jeevan M. Meruga, W. Cross, J. Kellar, D. Anagnostou

引用次数: 2

An investigation into using Kalman filtering for phase estimation in bluetooth receivers for Gaussian and Non-Gaussian Noise 基于卡尔曼滤波的蓝牙接收机高斯和非高斯噪声相位估计研究

IEEE International Conference on Electro-Information Technology , EIT 2013 Pub Date : 2013-05-09 DOI: 10.1109/EIT.2013.6632644

A. Nsour, Alhaj-Saleh Abdallah, M. Zohdy

引用次数: 7

Applications of complex network theory on power grids 复杂网络理论在电网中的应用

IEEE International Conference on Electro-Information Technology , EIT 2013 Pub Date : 2013-05-09 DOI: 10.1109/EIT.2013.6632712

M. Jawad, B. Gou

引用次数: 9

High-efficiency a-Si:H/μc-Si:H solar cells by optimizing A-Si:H and μc-Si:H sub-cells 通过优化a-Si:H和μc-Si:H亚电池，获得高效a-Si:H/μc-Si:H太阳能电池

IEEE International Conference on Electro-Information Technology , EIT 2013 Pub Date : 2013-05-09 DOI: 10.1109/EIT.2013.6632659

G. Hou, Xiaodang Zhang, Xiaoyan Han, Guijun Li, X. Geng, Xinliang Chen, Ying Zhao

{"title":"High-efficiency a-Si:H/μc-Si:H solar cells by optimizing A-Si:H and μc-Si:H sub-cells","authors":"G. Hou, Xiaodang Zhang, Xiaoyan Han, Guijun Li, X. Geng, Xinliang Chen, Ying Zhao","doi":"10.1109/EIT.2013.6632659","DOIUrl":"https://doi.org/10.1109/EIT.2013.6632659","url":null,"abstract":"The performance of a-Si:H/μc-Si:H tandem solar cell was improved by optimizing the a-Si:H top cell and μc-Si:H bottom cell, respectively. For the a-Si:H top cell, we focused on opto-electrical and structural properties of phosphorous-doped hydrogenated silicon (Si:H) films and their effect on the open circuit voltage (Voc). The experimental results indicated that when nanosized silicon crystalline grains existed in amorphous silicon matrix, the Voc of a-Si:H solar cells was much improved. An initial efficiency of 9.4% for a-Si:H solar cell was obtained. For the μc-Si:H bottom cell, we investigated the structural evolution along the growth direction of the intrinsic μc-Si:H layers. We introduced a high-quality initial seed layer at p/i interface to reduce the incubation layer thickness by lowering the silane concentration and very-high-frequency (VHF) power simultaneously. This initial seed layer acted as a seed layer for bulk μc-Si:H i-layer and the process reduced the ion bombardment on the p/i interface. We demonstrated a VHF power profiling technique by decreasing the VHF power step by step during the μc-Si:H deposition to control the structural evolution along the growth direction in the bulk i-layer. The advantage of this VHF power profiling technique was the reduced ion bombardments on growth surface because of the reduced VHF power. A high conversion efficiency of 9.36% was obtained for μc-Si:H p-i-n solar cell. Using a double n-layer (a-Si:H&μc-Si:H) in n/p tunnel recombination junction, we achieved the best conversion efficiency of 11.63% for a-Si:H/μc-Si:H tandem solar cells.","PeriodicalId":201202,"journal":{"name":"IEEE International Conference on Electro-Information Technology , EIT 2013","volume":"96 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125100457","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Model-based fault diagnosis of a DC-DC boost converters using hidden Markov model 基于隐马尔可夫模型的DC-DC升压变换器故障诊断

IEEE International Conference on Electro-Information Technology , EIT 2013 Pub Date : 2013-05-09 DOI: 10.1109/EIT.2013.6632695

M. Hadi, Hafizi, A. Izadian

引用次数: 8

Simulation of detecting and climbing a ladder for a humanoid robot 仿人机器人探测和攀爬梯子的仿真

IEEE International Conference on Electro-Information Technology , EIT 2013 Pub Date : 2013-05-09 DOI: 10.1109/EIT.2013.6632710

Prashanta Gyawali, J. McGough

引用次数: 8

Flash code utilizing resizable-clusters 使用可调整集群的Flash代码

IEEE International Conference on Electro-Information Technology , EIT 2013 Pub Date : 2013-05-09 DOI: 10.1109/EIT.2013.6632646

M. J. Tan, Y. Kaji

引用次数: 2

Parallelizing an algorithm to decide if a bipartite graph is shellable 并行化一个算法来决定一个二部图是否可shellable

IEEE International Conference on Electro-Information Technology , EIT 2013 Pub Date : 2013-05-09 DOI: 10.1109/EIT.2013.6632658

Andrés Santamaría-Galvis, Roberto Cruz, J. Branch, C. Trefftz

引用次数: 0

Relative RSS-based GSM localization technique 相对的基于rss的GSM定位技术

IEEE International Conference on Electro-Information Technology , EIT 2013 Pub Date : 2013-05-09 DOI: 10.1109/EIT.2013.6632643

M. H. A. Meniem, A. Hamad, E. Shaaban

引用次数: 10

Effect of growth temperature on the material properties of PLD-grown Bi2Te3 and Sb2Te3 生长温度对pld生长的Bi2Te3和Sb2Te3材料性能的影响

IEEE International Conference on Electro-Information Technology , EIT 2013 Pub Date : 2013-05-09 DOI: 10.1109/EIT.2013.6632706

Muneer Shaik, I. Abdel-Motaleb

{"title":"Effect of growth temperature on the material properties of PLD-grown Bi2Te3 and Sb2Te3","authors":"Muneer Shaik, I. Abdel-Motaleb","doi":"10.1109/EIT.2013.6632706","DOIUrl":"https://doi.org/10.1109/EIT.2013.6632706","url":null,"abstract":"Bismuth Telluride (Bi2Te3) and Antimony Telluride (Sb2Te3) are the preferable materials for building thermoelectric devices. Pulsed Laser Deposition (PLD) is one of the techniques used to grow these materials. To study the effect of temperature growth on the properties of the materials, thin films were PLD-deposited on n-type Silicon substrate in Argon (Ar) atmosphere. Substrate temperatures changed from 25 °C to 450 °C. The surface morphology of the films was studied using Atomic Force Microscopy (AFM) and their crystal properties were studied using X-ray Diffraction (XRD) analysis. The effect of the growth temperature on the material properties was investigated. AFM scans show how temperature affects the surface morphology. XRD results show that all the films are polycrystalline, and at higher temperatures both films have specific preferred orientations, namely along the (006) and (00 15) planes. Both Bi2Te3 and Sb2Te3 were found to have hexagonal crystal lattice structure with lattice constants a = 4.396 Å and c = 30.486 Å for Bi2Te3 and a = 5.075 Å and c = 30.451 Å for Sb2Te3. The grain sizes of all the films were calculated using Scherrer formula and plotted as a function of temperature for both the materials.","PeriodicalId":201202,"journal":{"name":"IEEE International Conference on Electro-Information Technology , EIT 2013","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128182557","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2