1998 IEEE International Reliability Physics Symposium Proceedings. 36th Annual (Cat. No.98CH36173)最新文献_第5页

Statistics of microstructure for via metallization and implication for electromigration reliability 通孔金属化的微观结构统计及其对电迁移可靠性的影响

1998 IEEE International Reliability Physics Symposium Proceedings. 36th Annual (Cat. No.98CH36173) Pub Date : 1900-01-01 DOI: 10.1109/RELPHY.1998.670664

H. Toyoda, P. Wang, P. Ho

引用次数: 5

High-resolution current and temperature mapping of electronic devices using scanning Joule expansion microscopy 使用扫描焦耳扩展显微镜的电子器件的高分辨率电流和温度映射

1998 IEEE International Reliability Physics Symposium Proceedings. 36th Annual (Cat. No.98CH36173) Pub Date : 1900-01-01 DOI: 10.1109/RELPHY.1998.670507

J. Varesi, S. Muenster, A. Majumdar

引用次数: 6

Method for equivalent acceleration of JEDEC/IPC moisture sensitivity levels JEDEC/IPC湿度敏感等级的等效加速度方法

1998 IEEE International Reliability Physics Symposium Proceedings. 36th Annual (Cat. No.98CH36173) Pub Date : 1900-01-01 DOI: 10.1109/RELPHY.1998.670553

R. L. Shook, B. Vaccaro, D. L. Gerlach

{"title":"Method for equivalent acceleration of JEDEC/IPC moisture sensitivity levels","authors":"R. L. Shook, B. Vaccaro, D. L. Gerlach","doi":"10.1109/RELPHY.1998.670553","DOIUrl":"https://doi.org/10.1109/RELPHY.1998.670553","url":null,"abstract":"This paper reports a new equivalent test procedure to accelerate JEDEC/IPC moisture sensitivity level testing for plastic surface mount packages. The methodology is developed from moisture diffusion analysis augmented by the use of the critical interface concentration dependency. Equivalent moisture ingress behaviour is shown to be obtainable for any combination of mould compound type and package thickness. The new test procedure, based on testing at 60/spl deg/C/60% RH, reduces the total required moisture soak time for Levels 3-5 by approximately a factor of five compared to the times required for 30/spl deg/C/60% RH testing. An additional benefit of the accelerated test procedure is the introduction of a new moisture level defined as a one month floor life at ambient exposure conditions of 30/spl deg/C/60% RH or less. The required soak time to perform this new moisture level is only 120 hours. Equivalency of the new accelerated test conditions is proven by moisture/reflow experiments on a variety of package types ranging from thin QFPs (TQFPs) and PLCCs to plastic ball grid arrays (PBGAs). Damage response, assessed from inspection for internal cracking and delamination using acoustic microscopy, indicates that the new test procedures are well correlated and considered indistinguishable in most cases.","PeriodicalId":196556,"journal":{"name":"1998 IEEE International Reliability Physics Symposium Proceedings. 36th Annual (Cat. No.98CH36173)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123796115","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 24

In-situ monitoring of bond degradation in power ICs under high current stress 大功率集成电路在大电流应力下键退化的原位监测

1998 IEEE International Reliability Physics Symposium Proceedings. 36th Annual (Cat. No.98CH36173) Pub Date : 1900-01-01 DOI: 10.1109/RELPHY.1998.670557

B. Krabbenborg

引用次数: 4

Hot electron degradation and unclamped inductive switching in submicron 60-V lateral DMOS 亚微米60v横向DMOS的热电子降解和非箝位电感开关

1998 IEEE International Reliability Physics Symposium Proceedings. 36th Annual (Cat. No.98CH36173) Pub Date : 1900-01-01 DOI: 10.1109/RELPHY.1998.670673

M. S. Shekar, R.K. Williams, M. Cornell, Ming-yuan Luo, M. Darwish

{"title":"Hot electron degradation and unclamped inductive switching in submicron 60-V lateral DMOS","authors":"M. S. Shekar, R.K. Williams, M. Cornell, Ming-yuan Luo, M. Darwish","doi":"10.1109/RELPHY.1998.670673","DOIUrl":"https://doi.org/10.1109/RELPHY.1998.670673","url":null,"abstract":"Hot electron degradation of 60-V lateral N-LDMOS devices integrated in a 0.8-/spl mu/m Bi-CMOS-DMOS twin-well VLSI CMOS process in conjunction with unclamped inductive switching (UIS) is presented for the first time. Two new figures of merit are introduced for reliable L-DMOS designs under both avalanche and saturation conditions. A built-in trade-off is shown to exist between HE degradation and UIS for submicron N-LDMOS devices. Two different techniques, namely, addition of a p-buried layer and P vs. As-doped drain N-LDMOS are investigated through device simulations and experiments to improve HE and UIS performance. Measurements indicate 8/spl times/ enhancement in UIS current for N-LDMOS with a p-buried layer. Although the P-graded drain N-LDMOS offers 2/spl times/ higher UIS current over the As-doped drain device, the measured device parameters deteriorate quickly, maintaining an asymptotic behavior above 10,000 s. Experiments indicate an order of magnitude increase in substrate currents for P-graded drain N-LDMOS when compared to As-doped devices. Simulations corroborate device degradation of P-graded drain N-LDMOS to higher impact ionization in the area of the LOCOS region.","PeriodicalId":196556,"journal":{"name":"1998 IEEE International Reliability Physics Symposium Proceedings. 36th Annual (Cat. No.98CH36173)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130410450","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 6

Effects of advanced processes on hot carrier reliability 先进工艺对热载体可靠性的影响

1998 IEEE International Reliability Physics Symposium Proceedings. 36th Annual (Cat. No.98CH36173) Pub Date : 1900-01-01 DOI: 10.1109/RELPHY.1998.670512

S. Aur, T. Grider, V. McNeil, T. Holloway, R. Eklund

引用次数: 8

Characterization of plasma charging damage in ultrathin gate oxides 超薄栅极氧化物等离子体充电损伤的表征

1998 IEEE International Reliability Physics Symposium Proceedings. 36th Annual (Cat. No.98CH36173) Pub Date : 1900-01-01 DOI: 10.1109/RELPHY.1998.670662

H. Lin, M. Wang, C. Chen, S. Hsien, C. Chien, T. Huang, C. Chang, T. Chao

引用次数: 17

Antenna protection strategy for ultra-thin gate MOSFETs 超薄栅极mosfet的天线保护策略

1998 IEEE International Reliability Physics Symposium Proceedings. 36th Annual (Cat. No.98CH36173) Pub Date : 1900-01-01 DOI: 10.1109/RELPHY.1998.670660

S. Krishnan, A. Amerasekera

引用次数: 25

Switching behavior of the soft breakdown conduction characteristic in ultra-thin (<5 nm) oxide MOS capacitors 超薄(< 5nm)氧化物MOS电容器软击穿导通特性的开关行为

1998 IEEE International Reliability Physics Symposium Proceedings. 36th Annual (Cat. No.98CH36173) Pub Date : 1900-01-01 DOI: 10.1109/RELPHY.1998.670440

E. Miranda, J. Suñé, R. Rodríguez, M. Nafría, X. Aymerich

引用次数: 20

Trap assisted tunneling as a mechanism of degradation and noise in 2-5 nm oxides 在2-5 nm的氧化物中，陷阱辅助隧穿作为降解和噪声的机制

1998 IEEE International Reliability Physics Symposium Proceedings. 36th Annual (Cat. No.98CH36173) Pub Date : 1900-01-01 DOI: 10.1109/RELPHY.1998.670447

G. Alers, B. Weir, M. A. Alam, G. Timp, T. Sorch

{"title":"Trap assisted tunneling as a mechanism of degradation and noise in 2-5 nm oxides","authors":"G. Alers, B. Weir, M. A. Alam, G. Timp, T. Sorch","doi":"10.1109/RELPHY.1998.670447","DOIUrl":"https://doi.org/10.1109/RELPHY.1998.670447","url":null,"abstract":"The mechanism of stress induced leakage current and dielectric breakdown is examined through 1/f noise in the tunneling current of 1.7-5 nm oxides. Before breakdown occurs, we find a linear relationship between low frequency 1/f noise and the increased current due to stress. This behavior can be described by a model of trap assisted tunneling for both phenomena. We develop a quantitative new model for the noise in terms of fluctuations in a trap assisted tunneling current through the oxide and show that the traditional charge-state fluctuation model is inconsistent with the voltage scaling of the noise. Our results demonstrate that noise can be used as a very sensitive measure of interface states, with a higher sensitivity than conventional capacitance-voltage relations. We show that the conduction mechanism in stressed and unstressed oxides is fundamentally different with the tunneling current in the unstressed oxides dominated by the fundamental limit of direct tunneling. Finally, noise in the post-breakdown state is used to understand the softening of breakdown at lower stressing conditions.","PeriodicalId":196556,"journal":{"name":"1998 IEEE International Reliability Physics Symposium Proceedings. 36th Annual (Cat. No.98CH36173)","volume":"127 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131895943","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 27