超薄栅极mosfet的天线保护策略

1998 IEEE International Reliability Physics Symposium Proceedings. 36th Annual (Cat. No.98CH36173) Pub Date : 1900-01-01 DOI:10.1109/RELPHY.1998.670660

S. Krishnan, A. Amerasekera

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引用次数: 25

摘要

我们比较了漏极二极管和门控二极管在低至21 /spl /的栅极氧化物的正、负等离子体损伤下作为天线保护的效能。我们的研究结果表明，一个标准的漏极/衬底p-n结(0.49 /spl mu/m/sup 2/)能够对高达100k /spl mu/m的天线进行器件保护，并且可以扩展到21 /spl Aring/器件。我们也在这里提出了新的保护方案，使用(1)等离子体紫外线暴露的n-阱-衬底二极管，以及(2)用于防止潜在天线损坏的器件保护的瞬态保险丝。

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Antenna protection strategy for ultra-thin gate MOSFETs

We compare the efficacy of drain-well diodes and gated diodes as antenna protection under positive as well as negative plasma damage for gate oxides down to 21 /spl Aring/. Our results indicate that a nominal drain/substrate p-n junction (0.49 /spl mu/m/sup 2/) is capable of device protection for antennas up to 100k /spl mu/m, and can be extended down to 21 /spl Aring/ devices. We also present here novel protection schemes using (1) plasma UV exposed n-well-to-substrate diodes, and (2) a transient fuse for device protection against latent antenna damage.

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来源期刊

1998 IEEE International Reliability Physics Symposium Proceedings. 36th Annual (Cat. No.98CH36173)

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