先进工艺对热载体可靠性的影响

1998 IEEE International Reliability Physics Symposium Proceedings. 36th Annual (Cat. No.98CH36173) Pub Date : 1900-01-01 DOI:10.1109/RELPHY.1998.670512

S. Aur, T. Grider, V. McNeil, T. Holloway, R. Eklund

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引用次数: 8

摘要

有几个先进的工艺正在积极研究，作为低于0.25 /spl mu/m技术的候选方案，甚至更高。研究了远程等离子体氮化氧化物(RPNO)、氘退火和口袋植入对热载流子可靠性的影响。发现在相同物理厚度的氧化物中，RPNO通过使有效氧化物厚度变薄来提高热载流子的可靠性。氘退火可以提高热载流子的可靠性，即使有氮化侧壁，如果退火适当的话。虽然口袋植入物可以减少短通道效应，但除非进行优化，否则热载流子寿命会降低。

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Effects of advanced processes on hot carrier reliability

There are several advanced processes which are being actively studied as candidates for sub-0.25 /spl mu/m technology and beyond. This paper studies the effects on hot carrier reliability from remote plasma nitrided oxide (RPNO), deuterium anneal and pocket implant. It is found that RPNO can improve the hot carrier reliability by making the effective oxide thickness thinner for oxides of the same physical thickness. The deuterium anneal can improve the hot carrier reliability, even with nitride sidewalls if proper annealing is done. While the pocket implant can reduce short channel effects, the hot carrier lifetime is degraded unless optimization is conducted.

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来源期刊

1998 IEEE International Reliability Physics Symposium Proceedings. 36th Annual (Cat. No.98CH36173)

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