1998 IEEE International Reliability Physics Symposium Proceedings. 36th Annual (Cat. No.98CH36173)最新文献_第6页

Cross-sectional atomic force microscopy of focused ion beam milled devices 聚焦离子束铣削装置的截面原子力显微镜

1998 IEEE International Reliability Physics Symposium Proceedings. 36th Annual (Cat. No.98CH36173) Pub Date : 1900-01-01 DOI: 10.1109/RELPHY.1998.670475

J. Ebel, C. Bozada, T. Schlesinger, C. Cerny, G. Desalvo, R. Dettmer, J. Gillespie, T. Jenkins, K. Nakano, C. Pettiford, T. Quach, J. Sewell, G. Via, R. Welch

引用次数: 3

REDR-based kinetics for line defects leading to sudden failures in 980 nm SL SQW InGaAs laser diodes 基于redr的980 nm SL SQW InGaAs激光二极管线缺陷突然失效动力学研究

1998 IEEE International Reliability Physics Symposium Proceedings. 36th Annual (Cat. No.98CH36173) Pub Date : 1900-01-01 DOI: 10.1109/RELPHY.1998.670459

A. Bonfiglio, M. Casu, M. Vanzi, F. Magistrali, M. Maini, G. Salmini

{"title":"REDR-based kinetics for line defects leading to sudden failures in 980 nm SL SQW InGaAs laser diodes","authors":"A. Bonfiglio, M. Casu, M. Vanzi, F. Magistrali, M. Maini, G. Salmini","doi":"10.1109/RELPHY.1998.670459","DOIUrl":"https://doi.org/10.1109/RELPHY.1998.670459","url":null,"abstract":"Recombination-enhanced-defect-reaction (REDR) (Kymerling, Solid State Electron. vol 21, pp. 1391-1401, 1978) has been recently proposed (Magistrali et al. 1997) as the driving mechanism for sudden failures in 980 nm SL SQW InGaAs pump laser diodes for active fiber optics. The proposal follows a set of observations on life-tested devices that coherently lead to link the ultimate catastrophic failure to the growth of line defects from outside to inside the active layer. The most intriguing feature of the detected failure mode remains its sudden occurrence during constant-current life-tests, which is the total loss of the laser emission within a few tens of hours, after several hundred hours of perfectly regular operation. No correlation has ever been found between the occurence of that phenomenon and any of the many initial measurements that have been performed. The paper aims to account for the observed kinetics, based on the simple model of a native ideal point defect located within a few diffusion lengths from the edge of the depleted region of a laser diode. Its effect on the laser current is quantified, as well as the energy released to the lattice per unit time because of recombination at the defect neighbourhoods. The key point is to correlate that energy with some growth direction and speed, which leads to a model for the degradation kinetics.","PeriodicalId":196556,"journal":{"name":"1998 IEEE International Reliability Physics Symposium Proceedings. 36th Annual (Cat. No.98CH36173)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122097882","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 5

Degradation of InGaAs-InP heterojunction bipolar transistors under high energy electron irradiation 高能电子辐照下InGaAs-InP异质结双极晶体管的降解

1998 IEEE International Reliability Physics Symposium Proceedings. 36th Annual (Cat. No.98CH36173) Pub Date : 1900-01-01 DOI: 10.1109/RELPHY.1998.670453

A. Bandyopadhyay, S. Subramanian, S. Chandrasekhar, S. Goodnick

引用次数: 0

Constant current charge-to-breakdown: Still a valid tool to study the reliability of MOS structures? 恒定电流充放电：仍是研究 MOS 结构可靠性的有效工具吗？

1998 IEEE International Reliability Physics Symposium Proceedings. 36th Annual (Cat. No.98CH36173) Pub Date : 1900-01-01 DOI: 10.1109/RELPHY.1998.670444

T. Nigam, R. Degraeve, G. Groeseneken, M. Heyns, H. Maes

引用次数: 73

A study of ESD-induced latent damage in CMOS integrated circuits CMOS集成电路静电致潜在损伤的研究

1998 IEEE International Reliability Physics Symposium Proceedings. 36th Annual (Cat. No.98CH36173) Pub Date : 1900-01-01 DOI: 10.1109/RELPHY.1998.670562

Y. Huh, M.G. Lee, J. Lee, H. Jung, T. Li, D. Song, Y. Lee, J. Hwang, Y. Sung, S. Kang

引用次数: 20

Assessing circuit-level hot-carrier reliability 评估电路级热载流子可靠性

1998 IEEE International Reliability Physics Symposium Proceedings. 36th Annual (Cat. No.98CH36173) Pub Date : 1900-01-01 DOI: 10.1109/RELPHY.1998.670509

W. Jiang, H. Le, J. Chung, T. Kopley, P. Marcoux, C. Dai

引用次数: 21

Extended data retention process technology for highly reliable flash EEPROMs of 10/sup 6/ to 10/sup 7/ W/E cycles 扩展数据保留处理技术，用于10/sup 6/到10/sup 7/ W/E周期的高可靠性闪存eeprom

1998 IEEE International Reliability Physics Symposium Proceedings. 36th Annual (Cat. No.98CH36173) Pub Date : 1900-01-01 DOI: 10.1109/RELPHY.1998.670672

F. Arai, T. Maruyama, R. Shirota

{"title":"Extended data retention process technology for highly reliable flash EEPROMs of 10/sup 6/ to 10/sup 7/ W/E cycles","authors":"F. Arai, T. Maruyama, R. Shirota","doi":"10.1109/RELPHY.1998.670672","DOIUrl":"https://doi.org/10.1109/RELPHY.1998.670672","url":null,"abstract":"Using 16 Mbit flash memories, we clarified the relationship between data retention and Si surface micro-defects just before the tunnel oxidation process. After 10/sup 5/ to 10/sup 6/ write/erase cycles, a small number of singular cells appear to have an anomalously large charge loss rate, when the Si surface defect density due to process damage exceeds 1.2/spl times/10/sup 20//cm/sup 3/. This anomalous charge loss phenomenon strongly depends on the electric field in the tunnel oxide, which is caused by the stored charge in the floating gate. Thus, an accelerated data retention test can be performed by means of the electric field in the tunnel oxide, by controlling the programmed V/sub t/ to be more than 2.4 V just before the retention test (here, neutral V/sub t/ is adjusted to 0 V). By using an accelerated test, it is clarified that controlling the number of surface micro-defects is important in order to obtain extended data retention characteristics. By reducing the surface micro-defects to less than 1.2/spl times/10/sup 20//cm/sup 3/, the data retention reliability after 10/sup 6/ to 10/sup 7/ write/erase cycles can be guaranteed for conventional 2-level flash memories, where programmed V/sub t/ is less than 2.4 V.","PeriodicalId":196556,"journal":{"name":"1998 IEEE International Reliability Physics Symposium Proceedings. 36th Annual (Cat. No.98CH36173)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132473683","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 35

Cu damascene interconnects with crystallographic texture control and its electromigration performance 铜大马士革互连与晶体织构控制及其电迁移性能

1998 IEEE International Reliability Physics Symposium Proceedings. 36th Annual (Cat. No.98CH36173) Pub Date : 1900-01-01 DOI: 10.1109/RELPHY.1998.670667

K. Abe, Yusuke Harada, H. Onoda

引用次数: 6

Lifetime estimates and unique failure mechanisms of the Digital Micromirror Device (DMD) 数字微镜器件(DMD)寿命估计及独特失效机制

1998 IEEE International Reliability Physics Symposium Proceedings. 36th Annual (Cat. No.98CH36173) Pub Date : 1900-01-01 DOI: 10.1109/RELPHY.1998.670436

M. Douglass

引用次数: 203