恒定电流充放电：仍是研究 MOS 结构可靠性的有效工具吗？

1998 IEEE International Reliability Physics Symposium Proceedings. 36th Annual (Cat. No.98CH36173) Pub Date : 1900-01-01 DOI:10.1109/RELPHY.1998.670444

T. Nigam, R. Degraeve, G. Groeseneken, M. Heyns, H. Maes

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引用次数: 73

摘要

结果表明，用恒流Q/sub / BD/的传统解释来评价工艺变化对MOS结构可靠性的影响可能会导致错误的结论。对于固定厚度，影响击穿统计的所有过程的Q/sub BD/-分布的比较甚至变得毫无意义。对于超薄氧化物，不同加工条件的影响需要恒定栅电压而不是恒定电流密度Q/sub BD/-测试。

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Constant current charge-to-breakdown: Still a valid tool to study the reliability of MOS structures?

It is shown that the conventional interpretation of constant current Q/sub BD/ to evaluate the influence of process variations on the reliability of MOS structures can lead to erroneous conclusions. For a fixed thickness, the comparison of Q/sub BD/-distributions of all processes that affect the breakdown statistics becomes even meaningless. For ultra-thin oxides, the impact of different processing conditions requires constant gate voltage instead of constant current density Q/sub BD/-tests.

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来源期刊

1998 IEEE International Reliability Physics Symposium Proceedings. 36th Annual (Cat. No.98CH36173)

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