大功率集成电路在大电流应力下键退化的原位监测

B. Krabbenborg
{"title":"大功率集成电路在大电流应力下键退化的原位监测","authors":"B. Krabbenborg","doi":"10.1109/RELPHY.1998.670557","DOIUrl":null,"url":null,"abstract":"Degradation kinetics for Au bond balls on Al bond pads under high current stress (2.5 A) show an order of magnitude difference in lifetime between positive and negative current stress. The failure mechanisms are discussed and a comparison with low-current lifetime is given, resulting in data-driven high current bond pad design rules.","PeriodicalId":196556,"journal":{"name":"1998 IEEE International Reliability Physics Symposium Proceedings. 36th Annual (Cat. No.98CH36173)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"In-situ monitoring of bond degradation in power ICs under high current stress\",\"authors\":\"B. Krabbenborg\",\"doi\":\"10.1109/RELPHY.1998.670557\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Degradation kinetics for Au bond balls on Al bond pads under high current stress (2.5 A) show an order of magnitude difference in lifetime between positive and negative current stress. The failure mechanisms are discussed and a comparison with low-current lifetime is given, resulting in data-driven high current bond pad design rules.\",\"PeriodicalId\":196556,\"journal\":{\"name\":\"1998 IEEE International Reliability Physics Symposium Proceedings. 36th Annual (Cat. No.98CH36173)\",\"volume\":\"12 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1998 IEEE International Reliability Physics Symposium Proceedings. 36th Annual (Cat. No.98CH36173)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RELPHY.1998.670557\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1998 IEEE International Reliability Physics Symposium Proceedings. 36th Annual (Cat. No.98CH36173)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RELPHY.1998.670557","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4

摘要

高电流(2.5 A)下,铝键垫上的金键球的降解动力学表明,正、负电流应力下的寿命存在数量级差异。讨论了失效机理,并与低电流寿命进行了比较,得出了数据驱动的大电流键合垫设计规则。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
In-situ monitoring of bond degradation in power ICs under high current stress
Degradation kinetics for Au bond balls on Al bond pads under high current stress (2.5 A) show an order of magnitude difference in lifetime between positive and negative current stress. The failure mechanisms are discussed and a comparison with low-current lifetime is given, resulting in data-driven high current bond pad design rules.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信