{"title":"大功率集成电路在大电流应力下键退化的原位监测","authors":"B. Krabbenborg","doi":"10.1109/RELPHY.1998.670557","DOIUrl":null,"url":null,"abstract":"Degradation kinetics for Au bond balls on Al bond pads under high current stress (2.5 A) show an order of magnitude difference in lifetime between positive and negative current stress. The failure mechanisms are discussed and a comparison with low-current lifetime is given, resulting in data-driven high current bond pad design rules.","PeriodicalId":196556,"journal":{"name":"1998 IEEE International Reliability Physics Symposium Proceedings. 36th Annual (Cat. No.98CH36173)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"In-situ monitoring of bond degradation in power ICs under high current stress\",\"authors\":\"B. Krabbenborg\",\"doi\":\"10.1109/RELPHY.1998.670557\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Degradation kinetics for Au bond balls on Al bond pads under high current stress (2.5 A) show an order of magnitude difference in lifetime between positive and negative current stress. The failure mechanisms are discussed and a comparison with low-current lifetime is given, resulting in data-driven high current bond pad design rules.\",\"PeriodicalId\":196556,\"journal\":{\"name\":\"1998 IEEE International Reliability Physics Symposium Proceedings. 36th Annual (Cat. No.98CH36173)\",\"volume\":\"12 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1998 IEEE International Reliability Physics Symposium Proceedings. 36th Annual (Cat. No.98CH36173)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RELPHY.1998.670557\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1998 IEEE International Reliability Physics Symposium Proceedings. 36th Annual (Cat. No.98CH36173)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RELPHY.1998.670557","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
In-situ monitoring of bond degradation in power ICs under high current stress
Degradation kinetics for Au bond balls on Al bond pads under high current stress (2.5 A) show an order of magnitude difference in lifetime between positive and negative current stress. The failure mechanisms are discussed and a comparison with low-current lifetime is given, resulting in data-driven high current bond pad design rules.