Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms最新文献

{"title":"Design and assembly of in situ electrical characterization setup for semiconductor devices in mixed neutron and gamma radiation at the University of Florida Training Reactor: Application to HZO-based MFM capacitors","authors":"Chaitanya Sharma ,&nbsp;Andrew O. Boozer ,&nbsp;Jyothier K. Nimmagadda ,&nbsp;Brian C. Shea ,&nbsp;Minjong Lee ,&nbsp;Jiyoung Kim ,&nbsp;Juan C. Nino","doi":"10.1016/j.nimb.2025.165834","DOIUrl":"10.1016/j.nimb.2025.165834","url":null,"abstract":"<div><div>Showcasing the performance of TiN/Hf_0.5Zr_0.5O₂ (HZO)/TiN ferroelectric capacitors (FeCAPs), we present the detailed development and implementation of a new in situ electrical characterization setup, designed and built at the University of Florida’s nuclear reactor facility, for testing semiconductor devices under radiation. This innovative system employs variable shielding materials to filter gamma and neutron radiation selectively. In situ measurements of the HZO devices revealed notable changes in ferroelectric hysteresis loops under increasing variable neutrons (i.e., thermal, epithermal, and fast neutrons) and gamma radiation exposures. Importantly, our study focuses on the real-time evolution of remnant polarization in HZO-based ferroelectric capacitors upon increasing radiation exposure inside the nuclear reactor’s beam port. These findings demonstrate the importance of operando performance of novel non-volatile memory architectures under neutron and gamma radiation, underscoring their application potential in space and related technologies.</div></div>","PeriodicalId":19380,"journal":{"name":"Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms","volume":"568 ","pages":"Article 165834"},"PeriodicalIF":1.4,"publicationDate":"2025-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144916640","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Readout system of pixelated silicon detector for compact AMS","authors":"Mirei Takeyama ,&nbsp;Toru Moriya ,&nbsp;Hisako Saitoh ,&nbsp;Hiroko Miyahara ,&nbsp;Fusa Miyake ,&nbsp;Hiromasa Ozaki ,&nbsp;Tetsuya Shiroishi ,&nbsp;Kouji Morimoto ,&nbsp;Daiya Kaji ,&nbsp;Kentaro Nakamura ,&nbsp;Shigeru Itoh ,&nbsp;Kazumasa Kosugi ,&nbsp;Fuyuki Tokanai","doi":"10.1016/j.nimb.2025.165841","DOIUrl":"10.1016/j.nimb.2025.165841","url":null,"abstract":"<div><div>A pixelated silicon detector (PSD) has been developed as a position-sensitive detector for the focal plane in a compact accelerator mass spectrometry (AMS) system. The PSD is useful for tuning the optimal parameters of the AMS system when it is installed in a facility and when the beamline needs to be re-arranged after installation. We have developed a new preamplifier and a data acquisition system for the PSD. The system is more compact and lightweight than circuit systems typically used in high-energy experiments, making it portable and easy to install in other facilities. Moreover, beam diagnostics can be performed in real time with online monitoring of the beam profile. The characteristics of the system were investigated using <span><math><mi>α</mi></math></span> particles and ¹⁴C beams.</div></div>","PeriodicalId":19380,"journal":{"name":"Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms","volume":"568 ","pages":"Article 165841"},"PeriodicalIF":1.4,"publicationDate":"2025-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144914027","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Towards AMS measurements of 91Nb, 94Nb and 93Mo produced in fusion environment","authors":"Carlos Vivo-Vilches ,&nbsp;Esad Hrnjic ,&nbsp;Martin Martschini ,&nbsp;Kyra Altindag ,&nbsp;Lee W. Packer ,&nbsp;Robin Golser ,&nbsp;Karin Hain","doi":"10.1016/j.nimb.2025.165847","DOIUrl":"10.1016/j.nimb.2025.165847","url":null,"abstract":"<div><div>Long-lived radionuclides, such as ⁹¹Nb, ⁹⁴Nb and ⁹³Mo, are expected to be produced in nuclear fusion reactors by reactions of high-energy neutrons with the structural material. Accurate predictions of waste categorization require experimental validation of simulation codes like FISPACT-II. This work explores the use of Ion-Laser InterAction Mass Spectrometry (ILIAMS) at the Vienna Environmental Research Accelerator (VERA) to measure these three radionuclides by accelerator mass spectrometry (AMS). The ILIAMS setup employs laser photodetachment to suppress their respective stable isobars: ⁹¹Zr, ⁹⁴Zr and ⁹⁴Mo, and ⁹³Nb.</div><div>For ^91,94Nb measurements, NbO₃⁻ is selected, with interferences from ZrO₃⁻ suppressed by collisions with the He buffer gas in the ion cooler. The suppression can be enhanced by overlapping a 355 nm laser with the ion beam. The lower limit for the suppression factor is 37000. In that way, we reach ⁹¹Zr/⁹³Nb and ⁹⁴Zr/⁹³Nb levels of 1.2 × 10⁻¹⁴ and 1.8 × 10⁻¹⁴, respectively, in targets prepared from commercial Nb₂O₅. MoO₃⁻ is suppressed by a factor of 4360, leading to a ⁹⁴Mo/⁹³Nb interference of 1.28 × 10⁻¹⁰ in the same targets.</div><div>For ⁹³Mo measurements, MoO₂⁻ is selected, with interference from NbO₂⁻ suppressed by 637 nm photons by a factor of 5.5 × 10⁶. This results in a ⁹³Nb/^natMo level of 1.3 × 10⁻¹³ in targets prepared from commercial MoO₃.</div><div>Suppression factors as high as this are not achieved by isobar suppression techniques based on differences in energy loss, not even by AMS facilities with terminal voltages above 8.5 MV.</div></div>","PeriodicalId":19380,"journal":{"name":"Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms","volume":"568 ","pages":"Article 165847"},"PeriodicalIF":1.4,"publicationDate":"2025-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144916639","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"6 MeV Au+ ion irradiation mechanism on SiC/SiO2 interface stability: focus on nitridation’s enhancement in radiation resistance","authors":"Nuoya Yang ,&nbsp;Jian Wang ,&nbsp;Wende Huang ,&nbsp;Qian Xu ,&nbsp;Chengwen Fu ,&nbsp;Yihui Yuan ,&nbsp;Hao Guo ,&nbsp;Kunyang Fan ,&nbsp;Shirui Li ,&nbsp;Yao Ma ,&nbsp;Mingmin Huang ,&nbsp;Zhimei Yang ,&nbsp;Yun Li ,&nbsp;Min Gong ,&nbsp;Guodong He ,&nbsp;Qiuming Wang ,&nbsp;Qiang Yu","doi":"10.1016/j.nimb.2025.165844","DOIUrl":"10.1016/j.nimb.2025.165844","url":null,"abstract":"<div><div>In aerospace radiation environments, the demand for SiC MOSFET devices with enhanced switching performance, superior high-temperature endurance, and radiation tolerance is continuously increasing. However, various ions in these environment can degrade the gate performance of such devices. To enhance the gate stability under radiation, high-fluence and low-energy gold ion radiation was performed on SiC/SiO₂ MOS structures. Two types of samples were tested: those that underwent oxidation only without annealing, and those that were treated with a NO annealing process after oxidation. The interfacial performance of these two types of samples was compared after radiation exposure. The experimental results indicated that at high radiation fluence, the non-nitrided samples lost their capacitance–voltage (C-V) characteristics, while the nitrided samples maintained good performance. Deep Level Transient Spectroscopy (DLTS) and X-ray Photoelectron Spectroscopy (XPS) were used to analyze changes in interface traps, energy levels, bonding configurations, and band structures. Scanning Electron Microscope (SEM) was used to observe changes in grain size and distribution at interfaces. The findings revealed that nitridation fills carbon vacancies caused by radiation, forms N-C bonds at the SiC/SiO₂ interface, and prevents the formation of carbon vacancy. These effects ensure the stability of the 4H-SiC/SiO₂ interface under radiation.</div></div>","PeriodicalId":19380,"journal":{"name":"Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms","volume":"567 ","pages":"Article 165844"},"PeriodicalIF":1.4,"publicationDate":"2025-08-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144911953","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"X-ray simulations with gVXR in education, digital twining, experiment planning, and data analysis","authors":"Franck P. Vidal ,&nbsp;Shaghayegh Afshari ,&nbsp;Sharif Ahmed ,&nbsp;Alberto Albiol ,&nbsp;Francisco Albiol ,&nbsp;Éric Béchet ,&nbsp;Alberto Corbí Bellot ,&nbsp;Stefan Bosse ,&nbsp;Simon Burkhard ,&nbsp;Younes Chahid ,&nbsp;Cheng-Ying Chou ,&nbsp;Robert Culver ,&nbsp;Pascal Desbarats ,&nbsp;Lewis Dixon ,&nbsp;Johan Friemann ,&nbsp;Amin Garbout ,&nbsp;Marcos García-Lorenzo ,&nbsp;Jean-François Giovannelli ,&nbsp;Ross Hanna ,&nbsp;Clémentine Hatton ,&nbsp;Pierre-Frédéric Villard","doi":"10.1016/j.nimb.2025.165804","DOIUrl":"10.1016/j.nimb.2025.165804","url":null,"abstract":"<div><div>gVirtualXray (gVXR) is an open-source framework that relies on the Beer–Lambert law to simulate X-ray images in real time on a graphics processor unit (GPU) using triangular meshes. A wide range of programming languages is supported (C/C++, Python, R, Ruby, Tcl, C#, Java, and GNU Octave). Simulations generated with gVXR have been benchmarked with clinically realistic phantoms (i.e. complex structures and materials) using Monte Carlo (MC) simulations, real radiographs and real digitally reconstructed radiographs (DRRs), and X-ray computed tomography (XCT). It has been used in a wide range of applications, including real-time medical simulators, proposing a new densitometric radiographic modality in clinical imaging, studying noise removal techniques in fluoroscopy, teaching particle physics and X-ray imaging to undergraduate students in engineering, and XCT to masters students, predicting image quality and artifacts in material science, etc. gVXR has also been used to produce a high number of realistic simulated images in optimisation problems and to train machine learning algorithms. This paper presents a comprehensive review of such applications of gVXR.</div></div>","PeriodicalId":19380,"journal":{"name":"Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms","volume":"568 ","pages":"Article 165804"},"PeriodicalIF":1.4,"publicationDate":"2025-08-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144914002","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Rutherford Backscattering Spectrometry analysis of the formation of superconducting V3Si thin films","authors":"Fshatsion B. Gessesew ,&nbsp;Manjith Bose ,&nbsp;Kumaravelu Ganesan ,&nbsp;Brett C. Johnson ,&nbsp;Jeffrey C. McCallum","doi":"10.1016/j.nimb.2025.165838","DOIUrl":"10.1016/j.nimb.2025.165838","url":null,"abstract":"<div><div>Vanadium silicide, V<span><math><msub><mrow></mrow><mrow><mn>3</mn></mrow></msub></math></span>Si, is a promising superconductor for silicon-based superconducting (SC) devices due to its compatibility with silicon substrates and its potential for integration into existing semiconductor technologies. However, to date there have been only a limited number of studies of the formation of SC V<span><math><msub><mrow></mrow><mrow><mn>3</mn></mrow></msub></math></span>Si thin films and the associated structural and superconducting properties. This work aims to explore the structural characteristics and SC properties of V<span><math><msub><mrow></mrow><mrow><mn>3</mn></mrow></msub></math></span>Si films, paving the way for the development of functional SC devices for quantum technology applications. We have investigated the formation of V<span><math><msub><mrow></mrow><mrow><mn>3</mn></mrow></msub></math></span>Si films by directly depositing vanadium (V) onto thermally grown SiO₂ on Si, followed by high-vacuum annealing to induce the phase transformation into V<span><math><msub><mrow></mrow><mrow><mn>3</mn></mrow></msub></math></span>Si. Rutherford Backscattering Spectrometry (RBS) was employed throughout the sample growth process to analyze the material composition as a function of depth using a <span><math><mrow><msup><mrow></mrow><mrow><mn>4</mn></mrow></msup><msup><mrow><mtext>He</mtext></mrow><mrow><mo>+</mo></mrow></msup></mrow></math></span> ion beam. Analysis of the RBS data confirmed that the V layer fully reacted with the SiO₂ substrate to form V<span><math><msub><mrow></mrow><mrow><mn>3</mn></mrow></msub></math></span>Si at the interface, in addition to a vanadium oxide (VO<span><math><msub><mrow></mrow><mrow><mi>x</mi></mrow></msub></math></span>) layer forming atop the V<span><math><msub><mrow></mrow><mrow><mn>3</mn></mrow></msub></math></span>Si film. The thickness of the V<span><math><msub><mrow></mrow><mrow><mn>3</mn></mrow></msub></math></span>Si layer ranges from 63 to 130 nm, with annealing temperatures between 750 °C and 800 °C. A sharp SC transition was observed at T<span><math><msub><mrow></mrow><mrow><mi>c</mi></mrow></msub></math></span> = 13 K in the sample annealed at 750 °C, with a narrow transition width <span><math><mrow><mrow><mo>(</mo><mi>Δ</mi><msub><mrow><mi>T</mi></mrow><mrow><mi>c</mi></mrow></msub><mo>)</mo></mrow><mtext>of</mtext><mn>0</mn><mo>.</mo><mn>6</mn><mspace></mspace><mtext>K</mtext></mrow></math></span>. Initial reactive ion etching (RIE) studies yielded promising results for local removal of the (VO<span><math><msub><mrow></mrow><mrow><mi>x</mi></mrow></msub></math></span>) to facilitate electrical contact formation to the SC layer.</div></div>","PeriodicalId":19380,"journal":{"name":"Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms","volume":"567 ","pages":"Article 165838"},"PeriodicalIF":1.4,"publicationDate":"2025-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144896329","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Status of the TJUAMS facility","authors":"Kejun Dong,&nbsp;Sheng Xu,&nbsp;Lixin Zhang,&nbsp;Yunchao Lang,&nbsp;Siliang Li","doi":"10.1016/j.nimb.2025.165840","DOIUrl":"10.1016/j.nimb.2025.165840","url":null,"abstract":"<div><div>The XCAMS system at Tianjin University, operational since October 2017, has successfully analyzed over 8,000 samples for ¹⁴C, ¹⁰Be, and ²⁶Al measurements during its seven years of service. Significant improvements were achieved through the 2023–2024 installation of two automated graphitization systems, substantially enhancing ¹⁴C sample throughput. Continuous optimization of system parameters and operational protocols, guided by long-term performance data and component reliability assessments, has established robust analytical capabilities. These advancements have enabled broad applications of cosmogenic nuclides in geoscience and environmental research. This contribution details the facility’s current status, including preparation methods, performance metrics, operational results, and component evaluations.</div></div>","PeriodicalId":19380,"journal":{"name":"Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms","volume":"567 ","pages":"Article 165840"},"PeriodicalIF":1.4,"publicationDate":"2025-08-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144885585","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Producing 236U reference standards for Accelerator Mass Spectrometry at the University of Notre Dame","authors":"T.L. Bailey ,&nbsp;N. Cabanas ,&nbsp;I. Russell ,&nbsp;D. Lund ,&nbsp;G. Mulcahy ,&nbsp;C. Bacall ,&nbsp;R. Cox ,&nbsp;C.J. Dye ,&nbsp;W. Peeler ,&nbsp;F. Rivero ,&nbsp;P. Collon","doi":"10.1016/j.nimb.2025.165825","DOIUrl":"10.1016/j.nimb.2025.165825","url":null,"abstract":"<div><div>²³⁶U is a rare isotope of uranium, naturally occurring in ores with an abundance of ²³⁶U/²³⁸U<span><math><mrow><mo>&lt;</mo><mn>1</mn><mo>×</mo><mn>1</mn><msup><mrow><mn>0</mn></mrow><mrow><mo>−</mo><mn>9</mn></mrow></msup></mrow></math></span>. The ability to detect it and make isotopic ratio measurements has applications ranging from nuclear forensics and nonproliferation to energy production and environmental protection. Currently, Accelerator Mass Spectrometry (AMS) is the only technique sensitive enough to accurately measure ²³⁶U/²³⁸U isotopic ratios as they exist in naturally occurring ores in the range of ²³⁶U/²³⁸U<span><math><mrow><mspace></mspace><mo>=</mo><mspace></mspace><mn>1</mn><msup><mrow><mn>0</mn></mrow><mrow><mo>−</mo><mn>12</mn></mrow></msup><mo>−</mo><mn>1</mn><msup><mrow><mn>0</mn></mrow><mrow><mo>−</mo><mn>9</mn></mrow></msup></mrow></math></span>. Some AMS facilities have demonstrated their capabilities to make these measurements. Historically, the lack of commercially available reference standards covering the range of naturally occurring ²³⁶U/²³⁸U abundances has necessitated the use of absolute measurements, notoriously difficult to do using AMS, resulting in increased uncertainties in measurements and a reliance on knowledge of systematic effects. To mitigate these issues, various AMS facilities have sought to develop their own reference standards. Using a reference standard prepared for other forms of mass spectrometry, a series of AMS suitable standards was created through dilution with low-background natural uranium. The techniques used to produce and characterize these materials as well as analysis of them using AMS will be discussed.</div></div>","PeriodicalId":19380,"journal":{"name":"Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms","volume":"567 ","pages":"Article 165825"},"PeriodicalIF":1.4,"publicationDate":"2025-08-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144879038","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A new highly sensitive compact laser based OSL reader − application in medical dosimetry","authors":"Anuj Soni ,&nbsp;R.N. Khanderao ,&nbsp;N. Kakade ,&nbsp;D.R. Mishra ,&nbsp;S.D. Sharma ,&nbsp;B.K. Sapra","doi":"10.1016/j.nimb.2025.165836","DOIUrl":"10.1016/j.nimb.2025.165836","url":null,"abstract":"<div><div>A highly sensitive compact laser based Optically Stimulated Luminescence (OSL) reader has been developed. The system consists of compact (matchbox size) lasers of 473 and 532 nm wavelength respectively having optical power 350 mW each. The dark counts of the system were found to be 30–40 cps, which is on par with LED (Light Emitting Diode) based commercial Riso reader. The minimum detectable dose of the developed system was found to be 147 μGy using LiCaAlF₆:Eu,Y dosimeter (3 mm dia) under 450 nm stimulation for one sec data acquisition as compared to 260 μGy with Riso reader. The sensitivity of the developed system was found to be nearly 2 times to that of the commercial Riso reader. The instrument will be useful for OSL phosphor research and dose verification in quality audit of radiotherapy. The design aspects of the developed reader system and the dosimetric characterization are discussed with its possible application in medical dosimetry.</div></div>","PeriodicalId":19380,"journal":{"name":"Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms","volume":"567 ","pages":"Article 165836"},"PeriodicalIF":1.4,"publicationDate":"2025-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144867386","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Synthesis and characterization of Mn doped magnesium oxide nanoparticles and investigation of their thermoluminescence dosimetry properties in gamma irradiation","authors":"R. Adibi ,&nbsp;E. Sadeghi ,&nbsp;M. Zahedifar","doi":"10.1016/j.nimb.2025.165828","DOIUrl":"10.1016/j.nimb.2025.165828","url":null,"abstract":"<div><div>This research successfully synthesized magnesium oxide nanoparticles doped with Mn by the co-precipitation method, followed by annealing at an optimized temperature. Structural analysis using X-ray diffraction confirmed the formation of pure and crystalline Mn-doped MgO nanoparticles. The morphology and elemental composition were analyzed using scanning electron microscopy and energy- depressive X-ray spectroscopy. The XRD spectrum of the synthesized particles shows a MgO with a crystallite size of about 20 nm. The MgO lattice was confirmed to contain Mn ions by EDX analysis. The photoluminescence properties of MgO:Mn were also investigated. The nanoparticles were subjected to ⁶⁰Co gamma irradiation to examine their thermoluminescence properties. Glow curves were obtained by heating irradiated samples, and the characteristics of the glow peaks were analyzed. The investigation focused on the impact of different parameters, including dopant concentration and annealing temperature, on the thermoluminescence properties of nanoparticles. Dopant concentration and optimized annealing temperatures led to a better thermoluminescence response. The evaluation of dose-response characteristics involved assessing linearity, sensitivity, and reproducibility. A computer program that relies on general order kinetics assisted in identifying and analyzing the TL glow peaks and their kinetic parameters. The thermoluminescence curve of nanoparticles is relatively straightforward, depending on the radiation dose, and the degree of fading is relatively minor.</div></div>","PeriodicalId":19380,"journal":{"name":"Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms","volume":"567 ","pages":"Article 165828"},"PeriodicalIF":1.4,"publicationDate":"2025-08-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144861275","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}