Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms最新文献

{"title":"Adsorption mechanism of Eu onto newly synthesized fluorous-compound-impregnating adsorbent","authors":"Yoichi Arai ,&nbsp;Sou Watanabe ,&nbsp;Masayuki Watanabe ,&nbsp;Tsuyoshi Arai ,&nbsp;Kenta Katsuki ,&nbsp;Tomohiro Agou ,&nbsp;Hisaharu Fujikawa ,&nbsp;Keisuke Takeda ,&nbsp;Hiroki Fukumoto ,&nbsp;Hiroyuki Hoshina ,&nbsp;Noriaki Seko ,&nbsp;Yuma Chikamatsu ,&nbsp;Naoto Hagura","doi":"10.1016/j.nimb.2024.165448","DOIUrl":"https://doi.org/10.1016/j.nimb.2024.165448","url":null,"abstract":"<div><p>Radioactive liquid waste containing nuclear fuel materials and chemical reagents is stored in nuclear facilities. To eliminate the radioactivity of the radioactive liquid waste, we developed RFIDA, a new perfluoroalkyl (RF)-based ligand with a basic structure of iminodiacetic acid (IDA). In this study, a solvent extraction test was conducted to confirm that the synthesized RFIDA adsorbs cations, and an adsorption test was conducted by impregnating RFIDA into porous silica with a polymer. To understand the adsorption mechanism, the adsorption of Eu on RFIDA and the coordination status of RFIDA with Eu-bearing functional groups were analyzed by particle-induced X-ray emission (PIXE) and ion beam-induced luminescence (IBIL) analyses, respectively. The PIXE analysis revealed the adsorption performance of RFIDA. The complex status of Eu was investigated using IBIL analysis, and the results showed that Eu and NO₃⁻ possibly coordinated with the functional group. The solid adsorbent impregnated with RFIDA also complexes with Eu in the same chemical form as in solvent extraction.</p></div>","PeriodicalId":19380,"journal":{"name":"Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms","volume":"554 ","pages":"Article 165448"},"PeriodicalIF":1.4,"publicationDate":"2024-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141539708","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Proton energy suitable for backscattering spectrometry in nitrogen composition analysis of transition metal nitride thin films on silicon substrate","authors":"Yasuhito Gotoh,&nbsp;Tomoaki Osumi","doi":"10.1016/j.nimb.2024.165445","DOIUrl":"https://doi.org/10.1016/j.nimb.2024.165445","url":null,"abstract":"<div><p>A proton energy suitable for elastic backscattering spectrometry for nitrogen composition analysis of transition metal nitride thin films on a silicon substrate was suggested. Conditions under which the backscattering yield from nitrogen is as high as possible, and that from silicon as low as possible is preferred. The ratio of the backscattering yield of the nitrogen at the surface to that of the silicon in the same channel, was calculated for the proton energies between 1.0 and 2.5 MeV with an interval of 20 keV. It was shown that a proton energy of 1.62–1.64 MeV is the most suitable not only considering the above-mentioned ratio, but also with regard to the energy dependence of the scattering cross section and an easy check of the proton energy during the measurements.</p></div>","PeriodicalId":19380,"journal":{"name":"Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms","volume":"554 ","pages":"Article 165445"},"PeriodicalIF":1.4,"publicationDate":"2024-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141539709","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A study on the gamma and swift heavy ion irradiation-induced effects on the electrical properties of TaOx-based MOS capacitors","authors":"R. Sai Prasad Goud ,&nbsp;Mangababu Akkanaboina ,&nbsp;Sravani Machiboyina ,&nbsp;Kanaka Ravi Kumar ,&nbsp;Arshiya Anjum ,&nbsp;Saif A. Khan ,&nbsp;A.P. Gnana Prakash ,&nbsp;A.P. Pathak ,&nbsp;S.V.S. Nageswara Rao","doi":"10.1016/j.nimb.2024.165455","DOIUrl":"https://doi.org/10.1016/j.nimb.2024.165455","url":null,"abstract":"<div><p>In this work, we present a detailed study on the effects of energetic ions and gamma irradiation on the performance of non-stoichiometric tantalum oxide (TaO<em>_x</em>) based Metal Oxide semiconductor (MOS) capacitors. The leakage current is found to increase after a critical fluence (5E12 ions/cm²) of 120 MeV Ag ion irradiation. Whereas the accumulation capacitance decreased drastically upon the initial fluence and the hysteresis loop is intact even at higher doses. The order of leakage current and accumulation capacitance remained almost the same in the case of gamma irradiation though there are minor variations as a function of dose. Photoluminescence studies indicated specific changes in the density of various types of defects in both ion and gamma irradiation samples. The observed changes in the electrical properties of these devices are consistent with the nature and density of various defects. The study suggests that the TaO<em>_x</em>-based MOS devices can sustain higher doses and are capable of working in radiation-harsh environments.</p></div>","PeriodicalId":19380,"journal":{"name":"Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms","volume":"554 ","pages":"Article 165455"},"PeriodicalIF":1.4,"publicationDate":"2024-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141539705","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Mechanism of electrical performance degradation of 4H-SiC junction barrier Schottky diodes induced by neutron irradiation","authors":"Hao Li ,&nbsp;Jingying Wang ,&nbsp;Binghua Song ,&nbsp;Heyi Li ,&nbsp;Long Geng ,&nbsp;Binghuang Duan ,&nbsp;Shuo Zhang","doi":"10.1016/j.nimb.2024.165452","DOIUrl":"https://doi.org/10.1016/j.nimb.2024.165452","url":null,"abstract":"<div><p>4H-SiC junction barrier Schottky diodes (JBS) were irradiated by reactor neutrons. The degradation in the electrical performance of JBS is characterized by I-V and C-V measurement, and the concentrations of traps introduced by irradiation were measured by deep-level transient spectroscopy (DLTS). TCAD simulations were employed to fit the I-V characteristics through adjusting the Schottky barrier height, concentrations of various traps induced by irradiation and the carrier mobility. The experimental results indicate that neutron irradiation would lead to an increase of the forward on-state resistance and reverse breakdown voltage. The simulation results indicates that the increase in forward on-state resistance and reverse breakdown voltage is primarily attributed to carrier capture by acceptor traps. A comparison between trap concentrations obtained from simulations and DLTS highlighted that when neutron fluence exceeds 2 × 10¹³ cm⁻², certain deep-level traps might not be entirely discernible through DLTS, particularly given a maximum measurement temperature of 500 K.</p></div>","PeriodicalId":19380,"journal":{"name":"Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms","volume":"554 ","pages":"Article 165452"},"PeriodicalIF":1.4,"publicationDate":"2024-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141539704","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Ion beam induced luminescence of lanthanide complexes in organic solvents irradiated by hydrogen and argon ion beams","authors":"Masaumi Nakahara ,&nbsp;Sou Watanabe ,&nbsp;Yasuyuki Ishii ,&nbsp;Ryohei Yamagata ,&nbsp;Yosuke Yuri ,&nbsp;Takahiro Yuyama ,&nbsp;Tomohisa Ishizaka ,&nbsp;Masashi Koka ,&nbsp;Naoto Yamada ,&nbsp;Naoto Hagura","doi":"10.1016/j.nimb.2024.165449","DOIUrl":"https://doi.org/10.1016/j.nimb.2024.165449","url":null,"abstract":"<div><p>In this study, the structures of lanthanide complexes in organic solvents for minor actinide recovery were evaluated by measuring ion beam induced luminescence (IBIL) of lanthanide complexes with organic solvents using H⁺ and Ar⁸⁺ ion beams. The organic solvent types affected the IBIL spectrum shapes of the lanthanide complexes in the measurements. The shapes of the IBIL spectra of lanthanide complexes in the organic solvent under Ar⁸⁺ ion beam impact were found to be similar to those with the H⁺ ion beam. Additionally, the organic solvent samples were compared with the adsorbent samples to evaluate the spectral shapes of the IBIL. The IBIL spectra of the Eu complexes in the <em>N</em>,<em>N</em>,<em>N’</em>,<em>N’</em>-tetraoctyl diglycolamide (TODGA) solvent recorded with ion beams were found similar in shape to that of the adsorbent. However, the IBIL spectrum of Eu complexes differed in the bis(2-ethylhexyl) hydrogen phosphate (HDEHP) solvent and the HDEHP/SiO₂-P adsorbent. Although Eu³⁺ chemically binds to the O of NO₃⁻ in the TODGA solvent, Eu and HDEHP complexes do not contain NO₃ and Eu³⁺ directly binds to the HDEHP solvent. Therefore, the differences in the Eu complex structures might affect the IBIL spectra in the organic solvent and the adsorbent between HDEHP and TODGA.</p></div>","PeriodicalId":19380,"journal":{"name":"Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms","volume":"554 ","pages":"Article 165449"},"PeriodicalIF":1.4,"publicationDate":"2024-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141539707","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Particle induced X-ray emission apparatus utilizing superconducting tunnel junction detector","authors":"S. Shiki ,&nbsp;G. Fujii ,&nbsp;S. Tomita ,&nbsp;K. Sasa","doi":"10.1016/j.nimb.2024.165451","DOIUrl":"https://doi.org/10.1016/j.nimb.2024.165451","url":null,"abstract":"<div><p>Particle induced X-ray emission with the use of focused ion beam (µ-PIXE) utilizing a superconducting tunnel junction (STJ) X-ray spectrometer has been developed to realize light element mapping in the soft X-ray region. A five hundred pixels array of STJ detector has been installed in the µ-PIXE beamline at the accelerator facility in the University of Tsukuba. Performance of a single-pixel STJ detector is tested. The K-lines of light elements C to Al have been separately detected in the pulse height spectra with a broad background, which is attributed substrate-hit events caused by scattered protons and high-energy characteristic X-ray lines. The background is rejected by using the anticoincidence technique or rise-time discrimination.</p></div>","PeriodicalId":19380,"journal":{"name":"Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms","volume":"554 ","pages":"Article 165451"},"PeriodicalIF":1.4,"publicationDate":"2024-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141481375","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Electron correlation effects in electron promotion processes during binary atomic collisions at solid surfaces","authors":"P. Riccardi ,&nbsp;C.A. Dukes","doi":"10.1016/j.nimb.2024.165458","DOIUrl":"https://doi.org/10.1016/j.nimb.2024.165458","url":null,"abstract":"<div><p>We report energy distributions of electrons emitted by Aluminum and Magnesium surfaces under the impact of singly charged neon ions with energies in the range 100–5000 eV, focusing on the Auger decay of electronic excitations produced during binary atomic collisions. The autoionization spectra of the projectiles show several peaks that are identified and assigned to specific collisional excitation processes. The data provide evidence for electron correlation effect that occur while the colliding atoms are still coupled in the quasi-molecular system and results in two-electron transitions.</p></div>","PeriodicalId":19380,"journal":{"name":"Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms","volume":"554 ","pages":"Article 165458"},"PeriodicalIF":1.4,"publicationDate":"2024-06-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S0168583X24002283/pdfft?md5=1a70397290a7fa9e88d9ce7bd6abf8f3&pid=1-s2.0-S0168583X24002283-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141481372","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Influence of lateral configurations on the charge transfer between H− ions and Na/Ag(1 1 1) surfaces","authors":"Aaron Martinez,&nbsp;Jonah Watts,&nbsp;Bogdana Bahrim","doi":"10.1016/j.nimb.2024.165456","DOIUrl":"https://doi.org/10.1016/j.nimb.2024.165456","url":null,"abstract":"<div><p>This study investigates the electron transfer during lateral collisions between H⁻ projectiles and Ag(1<!--> <!-->1<!--> <!-->1) surfaces with Na adsorbates. These interactions aim to probe the nearside region of the adsorbate. Compared to the on-top configuration, the lateral projected density of states reveals strong local effects such as perturbations of energy levels, adsorbate-induced states not identifiable from on-top, and image states enhancement. A study of dynamics reveals that, in addition to the projectile’s distance of closest approach and interaction time with surface, the projectile’s survival is influenced by the balance between electron capture and loss at the start of the exit trajectory.</p></div>","PeriodicalId":19380,"journal":{"name":"Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms","volume":"554 ","pages":"Article 165456"},"PeriodicalIF":1.4,"publicationDate":"2024-06-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141479561","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Optimizing gamma-ray shielding for boron neutron capture therapy by using unglazed ceramic composites","authors":"M.S. Ali ,&nbsp;G.S. Hassan ,&nbsp;G.M. Shoraiet ,&nbsp;A.M. Abdelmonem","doi":"10.1016/j.nimb.2024.165450","DOIUrl":"https://doi.org/10.1016/j.nimb.2024.165450","url":null,"abstract":"<div><p>In this study, the researchers investigated the effectiveness of different ceramic samples in filtering gamma rays emitted by various sources. The samples, which contained varying concentrations of lead and barium, were evaluated for their potential use in beam-shaping<!--> <!-->assembly systems for Boron Neutron Capture Therapy techniques, specifically those using the ²⁵²Cf neutron source for cancer treatment. Stilbene and NaI (Tl) were used to measure the total and pure gamma rays in this study. In addition, theoretical calculations using the Phy-X/PSD software have been conducted across a broad energy range, spanning from 0.001 to 18 MeV. These calculations aim to determine the attenuation of gamma rays and the relative deviations compared to the corresponding measured gamma-ray energies. Various composites with different percentages of additives and thicknesses, ranging from 0.8 cm to 4 cm, have shown satisfactory attenuation properties for gamma-ray shielding applications. However, the samples containing lead, especially the unglazed ceramic composites with 15 % lead and 4 cm thickness, were found to have the most preferred attenuation properties. The results obtained indicate that samples with a higher lead content are more effective attenuators compared to those with additional barium. In addition, the relationship between the transmission gamma ray factor and the percentage of additives and energies of gamma rays can be determined from the experimental linear attenuation coefficient coefficients. In addition, various coefficients such as the mass attenuation coefficient, half-value layer, effective atomic numbers, and effective electron densities are studied theoretically for the unglazed ceramic samples. The dose rate is also taken into consideration.</p></div>","PeriodicalId":19380,"journal":{"name":"Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms","volume":"554 ","pages":"Article 165450"},"PeriodicalIF":1.4,"publicationDate":"2024-06-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141479560","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"In Plasma ion beam analysis of polymer layer and adsorbed H monolayer etching","authors":"Louis-Charles Fortier ,&nbsp;Martin Chicoine ,&nbsp;Simon Chouteau ,&nbsp;Mathilde Clausse ,&nbsp;Émile Lalande ,&nbsp;Alexandre W. Lussier ,&nbsp;Sjoerd Roorda ,&nbsp;Luc Stafford ,&nbsp;Guy Terwagne ,&nbsp;François Schiettekatte","doi":"10.1016/j.nimb.2024.165439","DOIUrl":"https://doi.org/10.1016/j.nimb.2024.165439","url":null,"abstract":"<div><p>We present two experiments where a layer is plasma-etched while monitoring its evolution by <em>in plasma</em> ion beam analysis. First, we etch a photoresist with a diffuse O<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span> plasma at low pressure. Using a 4.335 MeV He beam, Rutherford Backscattering Spectrometry and Elastic Recoil Detection spectra are acquired every minute during 8 h. Etching of most elements follows a linear trend, but H desorbs faster at the beginning of the plasma process, which we ascribe to the ion beam-induced desorption. In addition, we observe a thin Mo layer building up at the surface, likely due to the sputtering of an electrode in the plasma source. Secondly, we etch in HF a crystalline Si (c-Si) sample with <span><math><mrow><mo>&lt;</mo><mn>100</mn><mo>&gt;</mo></mrow></math></span> surface orientation, which should leave 14 H/nm<span><math><msup><mrow></mrow><mrow><mn>2</mn></mrow></msup></math></span> bonded to the c-Si surface. The sample is then introduced in the chamber and exposed to a diffuse Ar plasma at low pressure. During plasma processing, the H surface concentration is monitored using a resonant nuclear reaction with a ¹⁵N beam at 6.385 MeV. The initial H concentration is <span><math><mrow><mn>11</mn><mo>.</mo><mn>7</mn><mo>±</mo><mn>1</mn><mo>.</mo><mn>1</mn></mrow></math></span> H/nm<span><math><msup><mrow></mrow><mrow><mn>2</mn></mrow></msup></math></span>, and it decreases over a 3-minute timescale to an equilibrium concentration of <span><math><mrow><mn>6</mn><mo>.</mo><mn>0</mn><mo>±</mo><mn>0</mn><mo>.</mo><mn>8</mn></mrow></math></span> H/nm<span><math><msup><mrow></mrow><mrow><mn>2</mn></mrow></msup></math></span>. Over the range of experimental conditions investigated, the diffuse Ar plasma is therefore not able to entirely sputter the H from the c-Si surface.</p></div>","PeriodicalId":19380,"journal":{"name":"Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms","volume":"554 ","pages":"Article 165439"},"PeriodicalIF":1.4,"publicationDate":"2024-06-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S0168583X2400209X/pdfft?md5=bd2a54e48ac7984501ea8664816ee10c&pid=1-s2.0-S0168583X2400209X-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141481374","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}