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1997 IEEE International Reliability Physics Symposium Proceedings. 35th Annual最新文献

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Study of a 3D phenomenon during ESD stresses in deep submicron CMOS technologies using photon emission tool 利用光子发射工具研究深亚微米CMOS技术中ESD应力的三维现象
1997 IEEE International Reliability Physics Symposium Proceedings. 35th Annual Pub Date : 1997-04-08 DOI: 10.1109/RELPHY.1997.584282
P. Salomé, C. Leroux, J. Chante, P. Crevel, G. Reimbold
{"title":"Study of a 3D phenomenon during ESD stresses in deep submicron CMOS technologies using photon emission tool","authors":"P. Salomé, C. Leroux, J. Chante, P. Crevel, G. Reimbold","doi":"10.1109/RELPHY.1997.584282","DOIUrl":"https://doi.org/10.1109/RELPHY.1997.584282","url":null,"abstract":"The purpose of this work is to present a new phenomenon in the ElectroStatic Discharge (ESD) failure threshold of deep submicron CMOS technologies. Although the bipolar conduction mode (or snapback) used for the protection was considered as uniform, we present dynamic EMission MIcroscopy (EMMI) studies showing for the first time that the current does not instantly spread out over the complete width of the transistor. Furthermore, this phenomenon leads to a saturation of failure threshold for the widest transistors and plays a major part in the failure threshold of devices. Different parameters having an influence on the spreading of the current are analyzed and interesting conclusions for the design of ESD hard NMOS devices are drawn.","PeriodicalId":193458,"journal":{"name":"1997 IEEE International Reliability Physics Symposium Proceedings. 35th Annual","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130298955","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 22
The effect of hot electron stress on the DC and microwave characteristics of GaAs-PHEMTs and InP-HEMTs 热电子应力对gaas - phemt和inp - hemt直流和微波特性的影响
1997 IEEE International Reliability Physics Symposium Proceedings. 35th Annual Pub Date : 1997-04-08 DOI: 10.1109/RELPHY.1997.584267
R. Menozzi, M. Borgarino, P. Cova, Y. Baeyens, M. Van Hove, F. Fantini
{"title":"The effect of hot electron stress on the DC and microwave characteristics of GaAs-PHEMTs and InP-HEMTs","authors":"R. Menozzi, M. Borgarino, P. Cova, Y. Baeyens, M. Van Hove, F. Fantini","doi":"10.1109/RELPHY.1997.584267","DOIUrl":"https://doi.org/10.1109/RELPHY.1997.584267","url":null,"abstract":"This work reports on hot electron stress experiments performed on SiN passivated AlGaAs-InGaAs-GaAs pseudomorphic HEMTs and InAlAs-InGaAs-InP lattice-matched HEMTs. We study the effects of the stress on both the device DC and RF characteristics, and investigate their correlation. In both the GaAs and InP HEMTs the high drain bias, room temperature hot electron stress produces some permanent change of the DC and RF characteristics which can be attributed to charge trapping phenomena.","PeriodicalId":193458,"journal":{"name":"1997 IEEE International Reliability Physics Symposium Proceedings. 35th Annual","volume":"463 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132312506","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
New understanding of LDD CMOS hot-carrier degradation and device lifetime at cryogenic temperatures 低温下LDD CMOS热载流子退化和器件寿命的新认识
1997 IEEE International Reliability Physics Symposium Proceedings. 35th Annual Pub Date : 1997-04-08 DOI: 10.1109/RELPHY.1997.584280
J. Wang-Ratkovic, R. Lacoe, K. Macwilliams, Miryeong Song, S. Brown, G. Yabiku
{"title":"New understanding of LDD CMOS hot-carrier degradation and device lifetime at cryogenic temperatures","authors":"J. Wang-Ratkovic, R. Lacoe, K. Macwilliams, Miryeong Song, S. Brown, G. Yabiku","doi":"10.1109/RELPHY.1997.584280","DOIUrl":"https://doi.org/10.1109/RELPHY.1997.584280","url":null,"abstract":"This work shows that the worst-case gate voltage stress condition for LDD nMOSFETs is a strong function of the channel length, drain voltage, and operating temperature. A new cross-over behavior of the worst-case gate voltage condition is reported at low temperatures. New understanding of the hot-carrier mechanisms at low temperatures is also discussed. Low temperature effects such as freeze-out are shown to have important contributions to the hot-carrier behavior at low temperatures. A trend is identified for the first time which suggests important consequences for the hot-carrier reliability of deep sub-micron channel length MOSFETs under normal operating temperatures.","PeriodicalId":193458,"journal":{"name":"1997 IEEE International Reliability Physics Symposium Proceedings. 35th Annual","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128686924","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 42
Characterization and modeling of a highly reliable metal-to-metal antifuse for high-performance and high-density field-programmable gate arrays 用于高性能和高密度现场可编程门阵列的高可靠金属对金属防熔丝的表征和建模
1997 IEEE International Reliability Physics Symposium Proceedings. 35th Annual Pub Date : 1997-04-08 DOI: 10.1109/RELPHY.1997.584227
C. Shih, R. Lambertson, F. Hawley, F. Issaq, J. Mccollum, E. Hamdy, Hiroshi Sakurai, H. Yuasa, Hirotsugu Honda, Tohru Yamaoka, T. Wada, C. Hu
{"title":"Characterization and modeling of a highly reliable metal-to-metal antifuse for high-performance and high-density field-programmable gate arrays","authors":"C. Shih, R. Lambertson, F. Hawley, F. Issaq, J. Mccollum, E. Hamdy, Hiroshi Sakurai, H. Yuasa, Hirotsugu Honda, Tohru Yamaoka, T. Wada, C. Hu","doi":"10.1109/RELPHY.1997.584227","DOIUrl":"https://doi.org/10.1109/RELPHY.1997.584227","url":null,"abstract":"The reliability of a new amorphous silicon/dielectric antifuse is characterized and modeled. Unprogrammed antifuse leakage and time-to-breakdown are functions not only of applied voltage but also of stressing polarity and temperature. Both breakdown and leakage criteria are used to investigate their effects on time-to-fail. A thermal model incorporates the effects of programming and stress currents, ambient temperature, and variation of antifuse resistance with temperature. The measured temperature dependence of antifuse resistance is used for the first time to derive key physical parameters in the model.","PeriodicalId":193458,"journal":{"name":"1997 IEEE International Reliability Physics Symposium Proceedings. 35th Annual","volume":"58 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125410866","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 15
An empirical lifetime projection method for laser diode degradation 激光二极管退化的经验寿命投影法
1997 IEEE International Reliability Physics Symposium Proceedings. 35th Annual Pub Date : 1997-04-08 DOI: 10.1109/RELPHY.1997.584272
N. Hwang, S. Kang, H. Lee, Seong-Su Park, Min-Kyu Song, K. Pyun
{"title":"An empirical lifetime projection method for laser diode degradation","authors":"N. Hwang, S. Kang, H. Lee, Seong-Su Park, Min-Kyu Song, K. Pyun","doi":"10.1109/RELPHY.1997.584272","DOIUrl":"https://doi.org/10.1109/RELPHY.1997.584272","url":null,"abstract":"An empirical method for lifetime projection of 1.55 /spl mu/m InGaAs-InP MQW-DFB laser diodes (LD) is presented. On the basis of experimental results of an accelerated aging test for 1500 hours, relationship between LD degradation, operating voltage, and ambient temperature has been determined. The presented method makes it possible to predict the lifetime of LDs by determining the thermal voltage ratio.","PeriodicalId":193458,"journal":{"name":"1997 IEEE International Reliability Physics Symposium Proceedings. 35th Annual","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124694169","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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