An empirical lifetime projection method for laser diode degradation

Abstract

An empirical method for lifetime projection of 1.55 /spl mu/m InGaAs-InP MQW-DFB laser diodes (LD) is presented. On the basis of experimental results of an accelerated aging test for 1500 hours, relationship between LD degradation, operating voltage, and ambient temperature has been determined. The presented method makes it possible to predict the lifetime of LDs by determining the thermal voltage ratio.