用于高性能和高密度现场可编程门阵列的高可靠金属对金属防熔丝的表征和建模

C. Shih, R. Lambertson, F. Hawley, F. Issaq, J. Mccollum, E. Hamdy, Hiroshi Sakurai, H. Yuasa, Hirotsugu Honda, Tohru Yamaoka, T. Wada, C. Hu
{"title":"用于高性能和高密度现场可编程门阵列的高可靠金属对金属防熔丝的表征和建模","authors":"C. Shih, R. Lambertson, F. Hawley, F. Issaq, J. Mccollum, E. Hamdy, Hiroshi Sakurai, H. Yuasa, Hirotsugu Honda, Tohru Yamaoka, T. Wada, C. Hu","doi":"10.1109/RELPHY.1997.584227","DOIUrl":null,"url":null,"abstract":"The reliability of a new amorphous silicon/dielectric antifuse is characterized and modeled. Unprogrammed antifuse leakage and time-to-breakdown are functions not only of applied voltage but also of stressing polarity and temperature. Both breakdown and leakage criteria are used to investigate their effects on time-to-fail. A thermal model incorporates the effects of programming and stress currents, ambient temperature, and variation of antifuse resistance with temperature. The measured temperature dependence of antifuse resistance is used for the first time to derive key physical parameters in the model.","PeriodicalId":193458,"journal":{"name":"1997 IEEE International Reliability Physics Symposium Proceedings. 35th Annual","volume":"58 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"15","resultStr":"{\"title\":\"Characterization and modeling of a highly reliable metal-to-metal antifuse for high-performance and high-density field-programmable gate arrays\",\"authors\":\"C. Shih, R. Lambertson, F. Hawley, F. Issaq, J. Mccollum, E. Hamdy, Hiroshi Sakurai, H. Yuasa, Hirotsugu Honda, Tohru Yamaoka, T. Wada, C. Hu\",\"doi\":\"10.1109/RELPHY.1997.584227\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The reliability of a new amorphous silicon/dielectric antifuse is characterized and modeled. Unprogrammed antifuse leakage and time-to-breakdown are functions not only of applied voltage but also of stressing polarity and temperature. Both breakdown and leakage criteria are used to investigate their effects on time-to-fail. A thermal model incorporates the effects of programming and stress currents, ambient temperature, and variation of antifuse resistance with temperature. The measured temperature dependence of antifuse resistance is used for the first time to derive key physical parameters in the model.\",\"PeriodicalId\":193458,\"journal\":{\"name\":\"1997 IEEE International Reliability Physics Symposium Proceedings. 35th Annual\",\"volume\":\"58 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1997-04-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"15\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1997 IEEE International Reliability Physics Symposium Proceedings. 35th Annual\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RELPHY.1997.584227\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1997 IEEE International Reliability Physics Symposium Proceedings. 35th Annual","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RELPHY.1997.584227","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 15

摘要

对一种新型非晶硅/介电反熔丝的可靠性进行了表征和建模。非程序防熔丝漏电和击穿时间不仅与外加电压有关,还与应力极性和温度有关。击穿和泄漏准则都用于研究它们对失效时间的影响。热模型综合了编程和应力电流、环境温度以及抗熔丝电阻随温度变化的影响。首次利用测得的抗熔丝电阻的温度依赖性来推导模型中的关键物理参数。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Characterization and modeling of a highly reliable metal-to-metal antifuse for high-performance and high-density field-programmable gate arrays
The reliability of a new amorphous silicon/dielectric antifuse is characterized and modeled. Unprogrammed antifuse leakage and time-to-breakdown are functions not only of applied voltage but also of stressing polarity and temperature. Both breakdown and leakage criteria are used to investigate their effects on time-to-fail. A thermal model incorporates the effects of programming and stress currents, ambient temperature, and variation of antifuse resistance with temperature. The measured temperature dependence of antifuse resistance is used for the first time to derive key physical parameters in the model.
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