1997 IEEE International Reliability Physics Symposium Proceedings. 35th Annual最新文献_第2页

A compact model of holding voltage for latch-up in epitaxial CMOS 外延CMOS锁存器保持电压的紧凑模型

1997 IEEE International Reliability Physics Symposium Proceedings. 35th Annual Pub Date : 1997-04-08 DOI: 10.1109/RELPHY.1997.584284

Ming-Jer Chen, C. Hou, P. Tseng, R. Shiue, Hun-Shung Lee, Jyh-Huei Chen, J. Jeng, Yeh-Ning Jou

{"title":"A compact model of holding voltage for latch-up in epitaxial CMOS","authors":"Ming-Jer Chen, C. Hou, P. Tseng, R. Shiue, Hun-Shung Lee, Jyh-Huei Chen, J. Jeng, Yeh-Ning Jou","doi":"10.1109/RELPHY.1997.584284","DOIUrl":"https://doi.org/10.1109/RELPHY.1997.584284","url":null,"abstract":"From different fabrication processes down to 0.35 /spl mu/m feature size and from two-dimensional device simulation, the holding voltage V/sub H/ for latch-up in epitaxial CMOS is found to be proportional to the square root of the holding current I/sub H/, specially for V/sub H//spl ges/2 V, while for V/sub H/<2 V the V/sub H/ linearly follows the I/sub H/. A slight modification of existing physically-based analytical models is set up for reproduction of all the observed dependencies, valid for different epitaxial layer thicknesses (t/sub epi/) and different anode-to-cathode spacings (L), along with a self-consistent interpretation by exploring the role of the base pushout width (h). By incorporating a structure-oriented holding current formula to this modified model, a compact, closed-form expression for V/sub H/ is produced directly as a function of t/sub epi/ and L. The compact model can serve as the scaling law for the holding voltage down to 1 V. The potential application of the compact model to low voltage, low power CMOS integrated circuits for latchup free operation is also projected.","PeriodicalId":193458,"journal":{"name":"1997 IEEE International Reliability Physics Symposium Proceedings. 35th Annual","volume":"898 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129166311","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 6

Impact of passivation film deposition and post-annealing on the reliability of flash memories 钝化膜沉积和后退火对闪存可靠性的影响

1997 IEEE International Reliability Physics Symposium Proceedings. 35th Annual Pub Date : 1997-04-08 DOI: 10.1109/RELPHY.1997.584223

S. Shuto, M. Tanaka, M. Sonoda, T. Idaka, K. Sasaki, S. Mori

引用次数: 9

Life tests and failure mechanisms of GaN/AlGaN/InGaN light emitting diodes GaN/AlGaN/InGaN发光二极管寿命测试及失效机理

1997 IEEE International Reliability Physics Symposium Proceedings. 35th Annual Pub Date : 1997-04-08 DOI: 10.1109/RELPHY.1997.584273

D. Barton, M. Osiński, P. Perlin, C. Helms, N. H. Berg

引用次数: 24

Hot carrier self convergent programming method for multi-level flash cell memory 多级快闪单元存储器的热载波自收敛编程方法

1997 IEEE International Reliability Physics Symposium Proceedings. 35th Annual Pub Date : 1997-04-08 DOI: 10.1109/RELPHY.1997.584245

Ph. Candeller, F. Mondon, B. Guillaumot, G. Reimbold, H. Achard, F. Martin, J. Hartmann

引用次数: 5

Reliability and alleviation of premature on-state avalanche breakdown in deep submicron power PHEMTs 深亚微米功率phemt过早导通雪崩击穿的可靠性和缓解

1997 IEEE International Reliability Physics Symposium Proceedings. 35th Annual Pub Date : 1997-04-08 DOI: 10.1109/RELPHY.1997.584270

Y. Chou, G. Li

引用次数: 13

Characterization of flip chip interconnect failure modes using high frequency acoustic micro imaging with correlative analysis 利用高频声学微成像及相关分析表征倒装芯片互连失效模式

1997 IEEE International Reliability Physics Symposium Proceedings. 35th Annual Pub Date : 1997-04-08 DOI: 10.1109/RELPHY.1997.584251

J. Semmens, Lawrence W. Kessler

引用次数: 40

Temperature cycling and thermal shock failure rate modeling 温度循环和热冲击故障率建模

1997 IEEE International Reliability Physics Symposium Proceedings. 35th Annual Pub Date : 1997-04-08 DOI: 10.1109/RELPHY.1997.584246

R. Blish

引用次数: 45

Interaction between water and fluorine-doped silicon oxide film deposited by PECVD PECVD沉积的掺氟氧化硅膜与水的相互作用

1997 IEEE International Reliability Physics Symposium Proceedings. 35th Annual Pub Date : 1997-04-08 DOI: 10.1109/RELPHY.1997.584266

M. Yoshimaru, S. Koizumi, K. Shimokawa, J. Ida

{"title":"Interaction between water and fluorine-doped silicon oxide film deposited by PECVD","authors":"M. Yoshimaru, S. Koizumi, K. Shimokawa, J. Ida","doi":"10.1109/RELPHY.1997.584266","DOIUrl":"https://doi.org/10.1109/RELPHY.1997.584266","url":null,"abstract":"The interaction between water and fluorine-doped silicon oxide (SiOF) films has been studied focusing on the relation between the fluorine bonding configuration in the film and film hygroscopicity. SiOF films with a high fluorine concentration have three IR absorption bands between 985 cm/sup -1/ and 920 cm/sup -1/. These bands are assumed to be attributable to silicon monofluoride and silicon difluoride sites. It was found that silicon difluoride sites interact with H/sub 2/O more easily than silicon monofluoride sites. Silicon difluoride sites are hydrided during humidification. The hygroscopicity of SiOF film with a high fluorine concentration is assumed to be due to an increase in the silicon difluoride sites in the film, because the ratio of silicon difluoride sites to total fluorine bonding sites increases markedly above a certain fluorine concentration. Plasma-enhanced chemical vapor deposition of SiOF film with excess helium dilution in the reactant gas was also studied to reduce the hygroscopicity of SiOF film. It was found that helium dilution decreases the number of silicon difluoride sites, and simultaneously increases the number of silicon monofluoride sites. Film having a high fluorine concentration deposited with helium dilution exhibited lower hygroscopicity and a lower relative dielectric constant than the film deposited without He. It is essential to reduce the silicon difluoride sites in SiOF film to obtain highly reliable film.","PeriodicalId":193458,"journal":{"name":"1997 IEEE International Reliability Physics Symposium Proceedings. 35th Annual","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134061432","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3

Determination of ultra-thin oxide voltages and thickness and the impact on reliability projection 超薄氧化物电压和厚度的测定及其对可靠性投影的影响

1997 IEEE International Reliability Physics Symposium Proceedings. 35th Annual Pub Date : 1997-04-08 DOI: 10.1109/RELPHY.1997.584258

E. Wu, S. Lo, W. Abadeer, A. Acovic, D. Buchanan, T. Furukawa, D. Brochu, R. Dufresne

引用次数: 19

Rapid degradation of InGaAsP/InP laser diodes due to copper contamination 铜污染导致InGaAsP/InP激光二极管的快速降解

1997 IEEE International Reliability Physics Symposium Proceedings. 35th Annual Pub Date : 1997-04-08 DOI: 10.1109/RELPHY.1997.584271

K. Fujihara, M. Ishino, Y. Matsui

引用次数: 1