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1997 IEEE International Reliability Physics Symposium Proceedings. 35th Annual最新文献

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Electrical reliability of metal-organic chemical vapor deposited high permittivity TiO/sub 2/ dielectric metal-oxide-semiconductor field effect transistors 金属-有机化学气相沉积高介电常数TiO/sub - 2/介电金属-氧化物-半导体场效应晶体管的电气可靠性
1997 IEEE International Reliability Physics Symposium Proceedings. 35th Annual Pub Date : 1997-04-08 DOI: 10.1109/RELPHY.1997.584243
Hyeon-Seag Kim, S. Campbell, D. Gilmer
{"title":"Electrical reliability of metal-organic chemical vapor deposited high permittivity TiO/sub 2/ dielectric metal-oxide-semiconductor field effect transistors","authors":"Hyeon-Seag Kim, S. Campbell, D. Gilmer","doi":"10.1109/RELPHY.1997.584243","DOIUrl":"https://doi.org/10.1109/RELPHY.1997.584243","url":null,"abstract":"The reliability of high permittivity films as a gate insulator is a serious concern due to small bandgaps (3.0/spl sim/4.0 eV). Ramped voltage, time dependent dielectric breakdown, and capacitance-voltage measurements were done on 190 /spl Aring/ layers of high permittivity TiO/sub 2/ which were deposited through the metal-organic chemical vapor deposition of titanium tetrakis-isopropoxide. Measurements of the high and low frequency capacitance indicate that virtually no interface states are created during constant current injection stress. The hot carrier effects was also measured at V/sub d/=3.5 V and V/sub B/ 2 V, but the threshold voltage shift and transconductance were clearly improved rather than degraded. Most of this increase in leakage upon electrical stress may he due to holes stored at the TiO/sub 2//SiO/sub 2/ interface. The stored charge at the interface changes the shape of the bands, allowing a Fowler-Nordheim like tunneling mechanism to occur.","PeriodicalId":193458,"journal":{"name":"1997 IEEE International Reliability Physics Symposium Proceedings. 35th Annual","volume":"118 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116668591","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Oxide breakdown mechanism and quantum physical chemistry for time-dependent dielectric breakdown 氧化物击穿机制及随时间介电击穿量子物理化学
1997 IEEE International Reliability Physics Symposium Proceedings. 35th Annual Pub Date : 1997-04-08 DOI: 10.1109/RELPHY.1997.584259
M. Kimura
{"title":"Oxide breakdown mechanism and quantum physical chemistry for time-dependent dielectric breakdown","authors":"M. Kimura","doi":"10.1109/RELPHY.1997.584259","DOIUrl":"https://doi.org/10.1109/RELPHY.1997.584259","url":null,"abstract":"Thermochemical-breakdown and hole-induced-breakdown models are theoretically formulated to explain the field-acceleration of TDDB phenomenon. Long-term TDDB test results proved to support the thermochemical-breakdown model. The time-dependent oxide breakdown mechanism is further studied on the basis of quantum physical chemistry. The structural transformations of a-SiO/sub 2/ up to breakdown are simulated by the semiempirical molecular orbital calculation method (PM3 method) using Si/sub 5/O/sub 16/H/sub 12/ clusters. The structural transformations can be classified into (a) amorphous-like-SiO/sub 2/ (a-SiO/sub 2/), (b) hole-trapped-SiO/sub 2/ (hole-trap), and (c) electrically-brokendown-SiO/sub 2/ (breakdown) structures. The atom configuration shows a shortened length between the nearest oxygen atoms due to hole trapping. This leads to oxide breakdown, and the breakdown structure consists of a pair of oxygen-excess (Si-O-O-Si) and oxygen-vacancy (Si-Si) defects. The heat of formation and frontier orbital energies of structural transformations account well for the physical aspects of the TDDB phenomenon.","PeriodicalId":193458,"journal":{"name":"1997 IEEE International Reliability Physics Symposium Proceedings. 35th Annual","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126088586","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 67
Current gain long-term instability of AlGaAs/GaAs HBT: physical mechanism and SPICE simulation AlGaAs/GaAs HBT的电流增益长期不稳定性:物理机制和SPICE模拟
1997 IEEE International Reliability Physics Symposium Proceedings. 35th Annual Pub Date : 1997-04-08 DOI: 10.1109/RELPHY.1997.584268
S. Sheu, J.J. Lieu, C.I. Huang
{"title":"Current gain long-term instability of AlGaAs/GaAs HBT: physical mechanism and SPICE simulation","authors":"S. Sheu, J.J. Lieu, C.I. Huang","doi":"10.1109/RELPHY.1997.584268","DOIUrl":"https://doi.org/10.1109/RELPHY.1997.584268","url":null,"abstract":"The current gain instability of AlGaAs/GaAs heterojunction bipolar transistor (HBT) is investigated, and a new AlGaAs/GaAs HBT model for SPICE circuit simulation is presented. Such a model includes the effects of base and collector leakage currents and the stress-induced abnormal base current, thus allowing the simulation of the performance of HBT circuits subjected to the electrical/thermal stress test (i.e. burn-in test).","PeriodicalId":193458,"journal":{"name":"1997 IEEE International Reliability Physics Symposium Proceedings. 35th Annual","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128063179","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
New screening concept for deep submicron CMOS VLSIs using temperature characteristics of leakage currents in MOS devices 利用MOS器件泄漏电流的温度特性筛选深亚微米CMOS vlsi的新概念
1997 IEEE International Reliability Physics Symposium Proceedings. 35th Annual Pub Date : 1997-04-08 DOI: 10.1109/RELPHY.1997.584234
M. Shimaya
{"title":"New screening concept for deep submicron CMOS VLSIs using temperature characteristics of leakage currents in MOS devices","authors":"M. Shimaya","doi":"10.1109/RELPHY.1997.584234","DOIUrl":"https://doi.org/10.1109/RELPHY.1997.584234","url":null,"abstract":"Temperature dependencies of several kinds of leakage current in MOSFETs were precisely investigated. We proposed the new concept of low-temperature standby-current (LTSC) screening for discriminating highly reliable CMOS LSIs based on the different temperature dependence between the normal and abnormal leakage current. This technique has a sufficient threshold current margin for the pass/fail decision making and is effective for screening deep-submicron CMOS LSIs with low threshold voltage MOSFETs.","PeriodicalId":193458,"journal":{"name":"1997 IEEE International Reliability Physics Symposium Proceedings. 35th Annual","volume":"85 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126293965","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Study of a CMOS I/O protection circuit using circuit-level simulation 基于电路级仿真的CMOS I/O保护电路研究
1997 IEEE International Reliability Physics Symposium Proceedings. 35th Annual Pub Date : 1997-04-08 DOI: 10.1109/RELPHY.1997.584283
T. Li, D. Suh, S. Ramaswamy, P. Bendix, E. Rosenbaum, A. Kapoor, S. Kang
{"title":"Study of a CMOS I/O protection circuit using circuit-level simulation","authors":"T. Li, D. Suh, S. Ramaswamy, P. Bendix, E. Rosenbaum, A. Kapoor, S. Kang","doi":"10.1109/RELPHY.1997.584283","DOIUrl":"https://doi.org/10.1109/RELPHY.1997.584283","url":null,"abstract":"In this work, circuit-level simulation is conducted for a typical two-stage protection circuit. We demonstrate that the circuit failure mechanism is correctly predicted by simulation. Furthermore, the current protection levels estimated by simulation are in good agreement with the experiments; therefore, circuit-level simulation can be used to predict the HBM-ESD protection level. In addition, the failure site is explained by simulation.","PeriodicalId":193458,"journal":{"name":"1997 IEEE International Reliability Physics Symposium Proceedings. 35th Annual","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114239005","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
Short-timescale thermal mapping of interconnects 互连的短时间尺度热映射
1997 IEEE International Reliability Physics Symposium Proceedings. 35th Annual Pub Date : 1997-04-08 DOI: 10.1109/RELPHY.1997.584281
Y. Ju, K. Goodson
{"title":"Short-timescale thermal mapping of interconnects","authors":"Y. Ju, K. Goodson","doi":"10.1109/RELPHY.1997.584281","DOIUrl":"https://doi.org/10.1109/RELPHY.1997.584281","url":null,"abstract":"The failure of metal interconnects subjected to brief electrical-current pulses is a reliability concern for the integrated circuits industry, especially in connection with electrostatic discharge (ESD). Since the magnitude and spatial distribution of the temperature rise during pulsing events strongly influence these failures, the development of suitable thermometry techniques is needed to understand the failure. This work develops a scanning laser-reflectance thermometry technique with a novel calibration procedure for interconnects, which captures transient temperature distributions along interconnects subjected to sub-microsecond current pulses of density exceeding 10/sup 7/ A cm/sup -2/. The temperature distribution, which is affected by corners in the interconnects and by the pulse duration, is qualitatively shown to influence the onset location for failure. The failures of the unpassivated interconnects studied here are observed to occur in three stages, which involve the debonding of the interconnect structures from polymer passivation layers and the melting of aluminum.","PeriodicalId":193458,"journal":{"name":"1997 IEEE International Reliability Physics Symposium Proceedings. 35th Annual","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123560759","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
Characterization of bitline stress effects on flash cell after program/erase cycle 程序/擦除周期后闪存单元位线应力效应的表征
1997 IEEE International Reliability Physics Symposium Proceedings. 35th Annual Pub Date : 1997-04-08 DOI: 10.1109/RELPHY.1997.584244
V.C. Liu, J. Guo, K.L. Chang, C.I. Huang, M.T. Wang, A. Chang, F. Shone
{"title":"Characterization of bitline stress effects on flash cell after program/erase cycle","authors":"V.C. Liu, J. Guo, K.L. Chang, C.I. Huang, M.T. Wang, A. Chang, F. Shone","doi":"10.1109/RELPHY.1997.584244","DOIUrl":"https://doi.org/10.1109/RELPHY.1997.584244","url":null,"abstract":"The impact of degradation of Flash memory cell characteristics caused by bitline stress during program/erase cycling is investigated considering the accentuated generation rate of negative oxide trap charges and interface-states. A special emphasis is focused on the observation of a significant amount of hole traps and their movement into the channel region. These oxide damages dramatically alter the device characteristics, and initiate severe read-disturb issue.","PeriodicalId":193458,"journal":{"name":"1997 IEEE International Reliability Physics Symposium Proceedings. 35th Annual","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127861079","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
The separation of superimposed ultrasonics pulse echo signals for semiconductor failure analysis using scanning acoustic tomography (S.A.T.) 超声脉冲回波叠加信号的分离及其在半导体失效分析中的应用
1997 IEEE International Reliability Physics Symposium Proceedings. 35th Annual Pub Date : 1997-04-08 DOI: 10.1109/RELPHY.1997.584250
H. Jang, K. Jhang, Dongkyun Lee
{"title":"The separation of superimposed ultrasonics pulse echo signals for semiconductor failure analysis using scanning acoustic tomography (S.A.T.)","authors":"H. Jang, K. Jhang, Dongkyun Lee","doi":"10.1109/RELPHY.1997.584250","DOIUrl":"https://doi.org/10.1109/RELPHY.1997.584250","url":null,"abstract":"Ultrasonics is used as an important nondestructive test tool in semiconductor reliability evaluation and failure analysis. Inspection of the die bottom to die attach adhesive interface for thin die has proven difficult as the reflected signals from the die top and bottom are superimposed. It is important that inspection of delamination of the bottom of the die can take place as it can greatly affect the thermal conductivity of thin semiconductor devices. In this study a transfer function technique is used to separate the reflected signal from the die bottom from the superimposed signal.","PeriodicalId":193458,"journal":{"name":"1997 IEEE International Reliability Physics Symposium Proceedings. 35th Annual","volume":"394 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120967541","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Impacts of plasma process-induced damage on ultra-thin gate oxide reliability 等离子体过程损伤对超薄栅极氧化物可靠性的影响
1997 IEEE International Reliability Physics Symposium Proceedings. 35th Annual Pub Date : 1997-04-08 DOI: 10.1109/RELPHY.1997.584257
K. Eriguchi, T. Yamada, Y. Kosaka, M. Niwa
{"title":"Impacts of plasma process-induced damage on ultra-thin gate oxide reliability","authors":"K. Eriguchi, T. Yamada, Y. Kosaka, M. Niwa","doi":"10.1109/RELPHY.1997.584257","DOIUrl":"https://doi.org/10.1109/RELPHY.1997.584257","url":null,"abstract":"The leakage current induced by the plasma charging damage in ultra-thin gate oxide is characterized from the time dependence of leakage current under constant-voltage stress for both stress-polarities. Based on the electron trapping model, the trap site density generated by the plasma processing is calculated. It is found that an annealing process recovers dominantly the plasma process-induced traps in the oxide, rather than the Si-SiO/sub 2/ interface states.","PeriodicalId":193458,"journal":{"name":"1997 IEEE International Reliability Physics Symposium Proceedings. 35th Annual","volume":"&NA; 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126033434","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 16
Evidence of electron-hole cooperation in SiO/sub 2/ dielectric breakdown SiO/sub - 2/介电击穿中电子-空穴合作的证据
1997 IEEE International Reliability Physics Symposium Proceedings. 35th Annual Pub Date : 1997-04-08 DOI: 10.1109/RELPHY.1997.584253
H. Satake, S. Takagi, A. Toriumi
{"title":"Evidence of electron-hole cooperation in SiO/sub 2/ dielectric breakdown","authors":"H. Satake, S. Takagi, A. Toriumi","doi":"10.1109/RELPHY.1997.584253","DOIUrl":"https://doi.org/10.1109/RELPHY.1997.584253","url":null,"abstract":"It has been experimentally proved that the coexistence of hot electrons and holes is essential for dielectric breakdown in SiO/sub 2/. In order to quantitatively investigate the roles of hot electrons and holes in dielectric breakdown of SiO/sub 2/, we evaluated the charge to breakdown, Q/sub bd/, and the total hole fluence to breakdown, Q/sub p/, by separately controlling the amounts of injected electrons and holes with the substrate hot hole (SHH) injection method. This paper is the first report that quantitatively points out the necessity for cooperation of hot electrons and holes in dielectric breakdown in SiO/sub 2/.","PeriodicalId":193458,"journal":{"name":"1997 IEEE International Reliability Physics Symposium Proceedings. 35th Annual","volume":"85 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127132449","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 18
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