ISLPED'00: Proceedings of the 2000 International Symposium on Low Power Electronics and Design (Cat. No.00TH8514)最新文献

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Low-power considerations in the design of Bluetooth 蓝牙设计中的低功耗考虑
S. Mattisson
{"title":"Low-power considerations in the design of Bluetooth","authors":"S. Mattisson","doi":"10.1109/LPE.2000.155269","DOIUrl":"https://doi.org/10.1109/LPE.2000.155269","url":null,"abstract":"In this paper, we review the Bluetooth technology, a new universal radio interface enabling electronic devices to connect and communicate wirelessly via short-range connections. Motivations for the radio requirements are given, and the implications of system parameters like operating modes, frequency hopping and interference resistance are discussed from a low-power perspective. Specific characteristics enabling low-cost single-chip implementations and supporting low power consumption are outlined.","PeriodicalId":188020,"journal":{"name":"ISLPED'00: Proceedings of the 2000 International Symposium on Low Power Electronics and Design (Cat. No.00TH8514)","volume":"219 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-07-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133748131","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 25
Low power sequential circuit design using priority encoding and clock gating 采用优先编码和时钟门控的低功耗时序电路设计
Xunwei Wu, M. Pedram
{"title":"Low power sequential circuit design using priority encoding and clock gating","authors":"Xunwei Wu, M. Pedram","doi":"10.1109/LPE.2000.155268","DOIUrl":"https://doi.org/10.1109/LPE.2000.155268","url":null,"abstract":"This paper presents a state assignment technique called priority encoding, which uses multi-code assignment plus clock gating to reduce power dissipation in sequential circuits. The basic idea is to assign multiple codes to states so as to enable more effective clock gating in the sequential circuit. Practical design examples are studied and simulated by PSPICE. Experimental results demonstrate that the priority encoding technique can result in sizable power saving.","PeriodicalId":188020,"journal":{"name":"ISLPED'00: Proceedings of the 2000 International Symposium on Low Power Electronics and Design (Cat. No.00TH8514)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115484621","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Power minimization of functional units by partially guarded computation 用部分保护计算实现功能单元的功率最小化
Junghwan Choi, Jinhwan Jeon, Kiyoung Choi
{"title":"Power minimization of functional units by partially guarded computation","authors":"Junghwan Choi, Jinhwan Jeon, Kiyoung Choi","doi":"10.1109/LPE.2000.155266","DOIUrl":"https://doi.org/10.1109/LPE.2000.155266","url":null,"abstract":"This paper deals with power minimization problem for data-dominated applications based on a novel concept called partially guarded computation. We divide a functional unit into two parts: MSP (Most Significant Part) and LSP (Least Significant Part) and allow the functional unit to perform only the LSP computation if the range of output data can be covered by LSP. We dynamically disable MSP computation to remove unnecessary transitions thereby reducing power consumption. We also propose a systematic approach for determining optimal location of the boundary between the two parts during high-level synthesis. Experimental results show about 10/spl sim/44% power reduction with about 30/spl sim/36% area overhead and less than 3% delay overhead in functional units.","PeriodicalId":188020,"journal":{"name":"ISLPED'00: Proceedings of the 2000 International Symposium on Low Power Electronics and Design (Cat. No.00TH8514)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130675931","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 36
Low power DSP's for wireless communications 用于无线通信的低功耗DSP
I. Verbauwhede, C. Nicol
{"title":"Low power DSP's for wireless communications","authors":"I. Verbauwhede, C. Nicol","doi":"10.1109/LPE.2000.155303","DOIUrl":"https://doi.org/10.1109/LPE.2000.155303","url":null,"abstract":"Wireless communications and more specifically, the fast growing penetration of cellular phones and cellular infrastructure are the major drivers for the development of new programmable Digital Signal Processors (DSP's). In this tutorial, an overview is given of recent developments in DSP processor architectures, that makes them well suited to execute computationally intensive algorithms typically found in communications systems. DSP processors have adapted instruction sets, memory architectures and data paths to execute compute intensive communications algorithms efficiently and in a low power fashion. Basic building blocks include convolutional decoders (mainly the Viterbi algorithm), turbo coding algorithms, FIR filters, speech coders, etc. This is illustrated with examples of different commercial and research processors.","PeriodicalId":188020,"journal":{"name":"ISLPED'00: Proceedings of the 2000 International Symposium on Low Power Electronics and Design (Cat. No.00TH8514)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129066181","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 20
Bias boosting technique for a 1.9 GHz class AB RF amplifier 1.9 GHz AB类射频放大器的偏置增强技术
T. Sowlati, S. Luo
{"title":"Bias boosting technique for a 1.9 GHz class AB RF amplifier","authors":"T. Sowlati, S. Luo","doi":"10.1109/LPE.2000.155300","DOIUrl":"https://doi.org/10.1109/LPE.2000.155300","url":null,"abstract":"A bias boosting technique for a 3.2 V, 1.9 GHz class AB RF amplifier designed in a 30 GHz BiCMOS process is presented in this paper. In a class AB amplifier, the average current drawn from the supply depends on the input signal level. As the output power increases so does the average currents in both the emitter and the base of the power transistor. The increased average current causes an increased voltage drop in the biasing circuitry and the ballast resistor. This reduces the conduction angle in the amplifier, pushing it deep into class B and even class C operation, reducing the maximum output power by 25%. To avoid the power reduction, the amplifier should have a larger bias which inevitably has a larger power dissipation at low output power levels. The proposed bias boosting circuitry dynamically increases the bias of the power transistor as the output power increases. The amplifier has less power dissipation at low power levels with an increased maximum output power.","PeriodicalId":188020,"journal":{"name":"ISLPED'00: Proceedings of the 2000 International Symposium on Low Power Electronics and Design (Cat. No.00TH8514)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130804258","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Power consumption reduction in high-speed /spl Sigma//spl Delta/ bandpass modulators 降低高速/spl Sigma//spl Delta/带通调制器的功耗
P. Cusinato, F. Stefani, A. Baschirotto
{"title":"Power consumption reduction in high-speed /spl Sigma//spl Delta/ bandpass modulators","authors":"P. Cusinato, F. Stefani, A. Baschirotto","doi":"10.1109/LPE.2000.155253","DOIUrl":"https://doi.org/10.1109/LPE.2000.155253","url":null,"abstract":"Power consumption is a key point in the design of high-speed switched capacitor (SC) circuits, which allow to efficiently implement a number of analog functions. Among them, SC /spl Sigma//spl Delta/ modulators are very popular for A/D conversion: in this kind of circuits, operational amplifiers are the most consuming cells because of their requirements in terms of DC gain and unity-gain frequency. A new amplifier with 110 dB DC gain and a unity-gain frequency of 250 MHz is presented. The large power consumption (20 mW) makes critical its use in commercial applications: however, combining this cell with a fast adaptive biasing circuit, high performance may be achieved with a reasonable dissipation. This approach has been used in the design of a 6th-order bandpass /spl Sigma//spl Delta/ modulator featuring 73 dB DR and suitable for the conversion at IF (10.7 MHz) of the FM radio signal.","PeriodicalId":188020,"journal":{"name":"ISLPED'00: Proceedings of the 2000 International Symposium on Low Power Electronics and Design (Cat. No.00TH8514)","volume":"196 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132306214","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
An 8 mA, 3.8 dB NF, 40 dB gain CMOS front-end for GPS applications 一个8毫安,3.8 dB NF, 40 dB增益CMOS前端GPS应用
F. Svelto, S. Deantoni, G. Montagna, R. Castello
{"title":"An 8 mA, 3.8 dB NF, 40 dB gain CMOS front-end for GPS applications","authors":"F. Svelto, S. Deantoni, G. Montagna, R. Castello","doi":"10.1109/LPE.2000.155299","DOIUrl":"https://doi.org/10.1109/LPE.2000.155299","url":null,"abstract":"A fully differential 0.35 /spl mu/m CMOS LNA plus mixer, tailored to a double conversion architecture, for GPS applications has been realized. The LNA makes use of an inductively degenerated input stage and a resonant LC load, featuring 12% frequency tuning, accomplished by an MOS varactor. The mixer is a Gilbert cell like, in which an NMOS and a PMOS differential pair, shunted together, realize the input stage. This topology allows one to save power, for given mixer gain and linearity. The front-end measured performances are: 40 dB gain, 3.8 dB NF,-25.5 dBm IIP3, 1.3 GHz input frequency, 140 MHz output frequency, with 8 mA from a 2.8 V voltage supply.","PeriodicalId":188020,"journal":{"name":"ISLPED'00: Proceedings of the 2000 International Symposium on Low Power Electronics and Design (Cat. No.00TH8514)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125784839","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Energy-efficient 32/spl times/32-bit multiplier in tunable near-zero threshold CMOS 可调谐近零阈值CMOS的高效32/spl倍/32位乘法器
V. Svilan, M. Matsui, J. Burr
{"title":"Energy-efficient 32/spl times/32-bit multiplier in tunable near-zero threshold CMOS","authors":"V. Svilan, M. Matsui, J. Burr","doi":"10.1109/LPE.2000.155297","DOIUrl":"https://doi.org/10.1109/LPE.2000.155297","url":null,"abstract":"An 80,000 transistor, low swing, 32/spl times/32-bit multiplier was fabricated in a standard 0.35 /spl mu/m, V/sub th/=0.5 V CMOS process and in a 0.35 /spl mu/m, back-bias tunable, near-zero V/sub th/ process. While standard CMOS at V/sub dd/=3.3 V runs at 136 MHz, the same performance can be achieved in the low-V/sub th/ version at V/sub dd/=1.3 V, resulting in more than 5 times lower power. Similar power reductions are obtained for frequencies down to 10 MHz. In addition, the low-V/sub th/ version is able to run at 188 MHz, which is 38% faster than standard CMOS.","PeriodicalId":188020,"journal":{"name":"ISLPED'00: Proceedings of the 2000 International Symposium on Low Power Electronics and Design (Cat. No.00TH8514)","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125694174","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Dual-V/sub T/ SRAM cells with full-swing single-ended bit line sensing for high-performance on-chip cache in 0.13 /spl mu/m technology generation 具有全摆幅单端位线传感的双v /sub / SRAM单元,用于0.13 /spl mu/m技术一代的高性能片上缓存
F. Hamzaoglu, Y. Ye, A. Keshavarzi, K. Zhang, S. Narendra, S. Borkar, M. Stan, V. De
{"title":"Dual-V/sub T/ SRAM cells with full-swing single-ended bit line sensing for high-performance on-chip cache in 0.13 /spl mu/m technology generation","authors":"F. Hamzaoglu, Y. Ye, A. Keshavarzi, K. Zhang, S. Narendra, S. Borkar, M. Stan, V. De","doi":"10.1109/LPE.2000.155246","DOIUrl":"https://doi.org/10.1109/LPE.2000.155246","url":null,"abstract":"Comparisons among different dual-V/sub T/ design choices for a large on-chip cache with single-ended sensing show that the design using a dual-V/sub T/ cell and low-V/sub T/ peripheral circuits is the best, and provides 10% performance gain with 1.2x larger active leakage power, and 1.6% larger cell area compared to the best design using high-V/sub T/ cells.","PeriodicalId":188020,"journal":{"name":"ISLPED'00: Proceedings of the 2000 International Symposium on Low Power Electronics and Design (Cat. No.00TH8514)","volume":"414 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124450762","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
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