Energy-efficient 32/spl times/32-bit multiplier in tunable near-zero threshold CMOS

V. Svilan, M. Matsui, J. Burr
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引用次数: 6

Abstract

An 80,000 transistor, low swing, 32/spl times/32-bit multiplier was fabricated in a standard 0.35 /spl mu/m, V/sub th/=0.5 V CMOS process and in a 0.35 /spl mu/m, back-bias tunable, near-zero V/sub th/ process. While standard CMOS at V/sub dd/=3.3 V runs at 136 MHz, the same performance can be achieved in the low-V/sub th/ version at V/sub dd/=1.3 V, resulting in more than 5 times lower power. Similar power reductions are obtained for frequencies down to 10 MHz. In addition, the low-V/sub th/ version is able to run at 188 MHz, which is 38% faster than standard CMOS.
可调谐近零阈值CMOS的高效32/spl倍/32位乘法器
采用标准的0.35 /spl mu/m, V/sub /=0.5 V CMOS工艺和0.35 /spl mu/m,反向偏置可调谐,近零V/sub /工艺制备了80000晶体管,低摆幅,32/spl倍/32位倍频倍增管。当标准CMOS在V/sub dd/=3.3 V时运行在136mhz时,在V/sub dd/=1.3 V的低V/sub /版本中可以实现相同的性能,从而使功耗降低5倍以上。频率低至10mhz时,也可获得类似的功率降低。此外,低v /sub /版本能够运行在188mhz,比标准CMOS快38%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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